Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/653490
Title: Impact of Sb Incorporation on MOVPE-Grown “Bulk” InGaAs(Sb)N Films for Solar Cell Application
Authors: Taewan Kim;Adam Wood;Honghyuk Kim;Youngjo Kim;Jaejin Lee;Mark Peterson;Yongkun Sin;Steven Moss;Thomas F. Kuech;Susan Babcock;Luke J. Mawst
subject: III–V semiconductor materials|thin-film devices|photovoltaic cells|Dilute-nitride materials
Year: 2016
Publisher: IEEE
Abstract: We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26 - 27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm2 , a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.
URI: http://localhost/handle/Hannan/138305
http://localhost/handle/Hannan/653490
ISSN: 2156-3381
2156-3403
volume: 6
issue: 6
Appears in Collections:2016

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Title: Impact of Sb Incorporation on MOVPE-Grown “Bulk” InGaAs(Sb)N Films for Solar Cell Application
Authors: Taewan Kim;Adam Wood;Honghyuk Kim;Youngjo Kim;Jaejin Lee;Mark Peterson;Yongkun Sin;Steven Moss;Thomas F. Kuech;Susan Babcock;Luke J. Mawst
subject: III–V semiconductor materials|thin-film devices|photovoltaic cells|Dilute-nitride materials
Year: 2016
Publisher: IEEE
Abstract: We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26 - 27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm2 , a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.
URI: http://localhost/handle/Hannan/138305
http://localhost/handle/Hannan/653490
ISSN: 2156-3381
2156-3403
volume: 6
issue: 6
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7556407.pdf694.4 kBAdobe PDFThumbnail
Preview File
Title: Impact of Sb Incorporation on MOVPE-Grown “Bulk” InGaAs(Sb)N Films for Solar Cell Application
Authors: Taewan Kim;Adam Wood;Honghyuk Kim;Youngjo Kim;Jaejin Lee;Mark Peterson;Yongkun Sin;Steven Moss;Thomas F. Kuech;Susan Babcock;Luke J. Mawst
subject: III–V semiconductor materials|thin-film devices|photovoltaic cells|Dilute-nitride materials
Year: 2016
Publisher: IEEE
Abstract: We have investigated the impacts of Sb incorporation on the microstructural, optical, electrical, and carrier dynamics properties of bulk InGaAsSbN films in a comparative study of InGaAsN and InGaAsSbN materials grown by metal-organic vapor phase epitaxy (MOVPE). These films were grown at the relatively high temperature of 600 °C and annealed at 800 °C for 30 min. Transmission electron microscopy studies indicate compositional and structural homogeneity of the InGaAsN and InGaAsSbN films. Low-temperature time-resolved photoluminescence measurements of the MOVPE-grown InGaAsN film show a longer minority carrier lifetime (~40 ns) than observed for the InGaAsSbN film (~26 - 27 ns). In addition, single-junction solar cells with an InGaAsN (InGaAsSbN) base layer exhibit an open-circuit voltage of 0.64 (0.58) V, a short-circuit current of 17.13 (16.89) mA/cm2 , a fill factor (FF) of 77.55 (74.29)%, and an efficiency of 8.57 (7.31)%. Sb incorporation in InGaAsN adversely affects solar cell performance due to a reduced minority carrier lifetime correlated with the formation of defects and narrow depletion region width resulting from a higher background carbon impurity level.
URI: http://localhost/handle/Hannan/138305
http://localhost/handle/Hannan/653490
ISSN: 2156-3381
2156-3403
volume: 6
issue: 6
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7556407.pdf694.4 kBAdobe PDFThumbnail
Preview File