Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/647072
Title: The Investigation on Single Event Function Failure for DC/DC Converters with Three Single Terminal Topological Structures
Authors: Pengwei Li;Wenyan Wang;Lei Luo;Qingkui Yu;Min Tang;Feipeng Du;Jie Liu
subject: single event function failure|radiation hardened design|space application|DC-DC converter|sensitivity factor|heavy ion radiation experiment|MOS-FET source-drain terminal voltage|three single terminal topological structure
Year: 2016
Publisher: IEEE
Abstract: Heavy ion radiation experiments have been done to DC/DC converters with different topological structures for space applications. The test results were analyzed about the function failure of three topological structures caused by single event effects. The relationship between the function failure and the input supply voltage, the output load current and the topological structure of the module were discussed. Based on the analysis of the variation relationship among the source/drain terminal voltage of MOSFETs and the input voltage and the output load, the sensitivity factors associated with the function failure caused by single event effects were discussed. A new analysis on single event function failure of DC/DC converter based on different topologies has been presented, which can be applied to radiation hardened design and space application.
URI: http://localhost/handle/Hannan/179515
http://localhost/handle/Hannan/647072
ISSN: 1022-4653
2075-5597
volume: 25
issue: 6
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7763006.pdf230.51 kBAdobe PDFThumbnail
Preview File
Title: The Investigation on Single Event Function Failure for DC/DC Converters with Three Single Terminal Topological Structures
Authors: Pengwei Li;Wenyan Wang;Lei Luo;Qingkui Yu;Min Tang;Feipeng Du;Jie Liu
subject: single event function failure|radiation hardened design|space application|DC-DC converter|sensitivity factor|heavy ion radiation experiment|MOS-FET source-drain terminal voltage|three single terminal topological structure
Year: 2016
Publisher: IEEE
Abstract: Heavy ion radiation experiments have been done to DC/DC converters with different topological structures for space applications. The test results were analyzed about the function failure of three topological structures caused by single event effects. The relationship between the function failure and the input supply voltage, the output load current and the topological structure of the module were discussed. Based on the analysis of the variation relationship among the source/drain terminal voltage of MOSFETs and the input voltage and the output load, the sensitivity factors associated with the function failure caused by single event effects were discussed. A new analysis on single event function failure of DC/DC converter based on different topologies has been presented, which can be applied to radiation hardened design and space application.
URI: http://localhost/handle/Hannan/179515
http://localhost/handle/Hannan/647072
ISSN: 1022-4653
2075-5597
volume: 25
issue: 6
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7763006.pdf230.51 kBAdobe PDFThumbnail
Preview File
Title: The Investigation on Single Event Function Failure for DC/DC Converters with Three Single Terminal Topological Structures
Authors: Pengwei Li;Wenyan Wang;Lei Luo;Qingkui Yu;Min Tang;Feipeng Du;Jie Liu
subject: single event function failure|radiation hardened design|space application|DC-DC converter|sensitivity factor|heavy ion radiation experiment|MOS-FET source-drain terminal voltage|three single terminal topological structure
Year: 2016
Publisher: IEEE
Abstract: Heavy ion radiation experiments have been done to DC/DC converters with different topological structures for space applications. The test results were analyzed about the function failure of three topological structures caused by single event effects. The relationship between the function failure and the input supply voltage, the output load current and the topological structure of the module were discussed. Based on the analysis of the variation relationship among the source/drain terminal voltage of MOSFETs and the input voltage and the output load, the sensitivity factors associated with the function failure caused by single event effects were discussed. A new analysis on single event function failure of DC/DC converter based on different topologies has been presented, which can be applied to radiation hardened design and space application.
URI: http://localhost/handle/Hannan/179515
http://localhost/handle/Hannan/647072
ISSN: 1022-4653
2075-5597
volume: 25
issue: 6
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7763006.pdf230.51 kBAdobe PDFThumbnail
Preview File