Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/646630
Title: The Effect of the Quantum Well Structure in Green Phosphorescent OLED With a Mixed Host Emission Interlayer
Authors: ZhiQi Kou;Yao Xu;Shuang Cheng;XiaoPing Wang
subject: quantum well|Mixed host|phosphorescent OLED
Year: 2016
Publisher: IEEE
Abstract: In order to improve the performance of green phosphorescent organic light-emitting diodes, we investigate multiple quantum well (MQW) structure ( ${{\rm CBP/CBP}}_{{{\rm 2/3}}}$</tex-math>: ${{\rm TPBi}}_{{{\rm 1/3}}}/{{\rm CBP}}$</tex-math>) devices with mixed host emission interlayer ( ${{\rm CBP}}_{{{\rm 2/3}}}$</tex-math></inline-formula>: ${{\rm TPBi}}_{{{\rm 1/3}}}$</tex-math></inline-formula>). The four devices with the same thickness of the emission layer (EML) are fabricated, in which the number of quantum well is zero, one, two, and three, respectively. Remarkably, the device with a double MQW structure achieves the maximum luminance, current efficiency and power efficiency values corresponding to ${{\rm 21930\,cd/m}}^{2}$</tex-math></inline-formula> at 10&#x00A0;V, ${{\rm 48.6\,cd/A}}$</tex-math></inline-formula>, and ${{\rm 46.4\,lm/W}}$</tex-math></inline-formula>, respectively. The results also show that the double MQW structure can reduce turn-on voltage from 3.5 to 3&#x00A0;V. We attribute these improvements to the MQW structure which can extend the exciton distribution and avoid space charge accumulation in the EML.
URI: http://localhost/handle/Hannan/179272
http://localhost/handle/Hannan/646630
ISSN: 1551-319X
1558-9323
volume: 12
issue: 12
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7580594.pdf324.15 kBAdobe PDFThumbnail
Preview File
Title: The Effect of the Quantum Well Structure in Green Phosphorescent OLED With a Mixed Host Emission Interlayer
Authors: ZhiQi Kou;Yao Xu;Shuang Cheng;XiaoPing Wang
subject: quantum well|Mixed host|phosphorescent OLED
Year: 2016
Publisher: IEEE
Abstract: In order to improve the performance of green phosphorescent organic light-emitting diodes, we investigate multiple quantum well (MQW) structure ( ${{\rm CBP/CBP}}_{{{\rm 2/3}}}$</tex-math>: ${{\rm TPBi}}_{{{\rm 1/3}}}/{{\rm CBP}}$</tex-math>) devices with mixed host emission interlayer ( ${{\rm CBP}}_{{{\rm 2/3}}}$</tex-math></inline-formula>: ${{\rm TPBi}}_{{{\rm 1/3}}}$</tex-math></inline-formula>). The four devices with the same thickness of the emission layer (EML) are fabricated, in which the number of quantum well is zero, one, two, and three, respectively. Remarkably, the device with a double MQW structure achieves the maximum luminance, current efficiency and power efficiency values corresponding to ${{\rm 21930\,cd/m}}^{2}$</tex-math></inline-formula> at 10&#x00A0;V, ${{\rm 48.6\,cd/A}}$</tex-math></inline-formula>, and ${{\rm 46.4\,lm/W}}$</tex-math></inline-formula>, respectively. The results also show that the double MQW structure can reduce turn-on voltage from 3.5 to 3&#x00A0;V. We attribute these improvements to the MQW structure which can extend the exciton distribution and avoid space charge accumulation in the EML.
URI: http://localhost/handle/Hannan/179272
http://localhost/handle/Hannan/646630
ISSN: 1551-319X
1558-9323
volume: 12
issue: 12
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7580594.pdf324.15 kBAdobe PDFThumbnail
Preview File
Title: The Effect of the Quantum Well Structure in Green Phosphorescent OLED With a Mixed Host Emission Interlayer
Authors: ZhiQi Kou;Yao Xu;Shuang Cheng;XiaoPing Wang
subject: quantum well|Mixed host|phosphorescent OLED
Year: 2016
Publisher: IEEE
Abstract: In order to improve the performance of green phosphorescent organic light-emitting diodes, we investigate multiple quantum well (MQW) structure ( ${{\rm CBP/CBP}}_{{{\rm 2/3}}}$</tex-math>: ${{\rm TPBi}}_{{{\rm 1/3}}}/{{\rm CBP}}$</tex-math>) devices with mixed host emission interlayer ( ${{\rm CBP}}_{{{\rm 2/3}}}$</tex-math></inline-formula>: ${{\rm TPBi}}_{{{\rm 1/3}}}$</tex-math></inline-formula>). The four devices with the same thickness of the emission layer (EML) are fabricated, in which the number of quantum well is zero, one, two, and three, respectively. Remarkably, the device with a double MQW structure achieves the maximum luminance, current efficiency and power efficiency values corresponding to ${{\rm 21930\,cd/m}}^{2}$</tex-math></inline-formula> at 10&#x00A0;V, ${{\rm 48.6\,cd/A}}$</tex-math></inline-formula>, and ${{\rm 46.4\,lm/W}}$</tex-math></inline-formula>, respectively. The results also show that the double MQW structure can reduce turn-on voltage from 3.5 to 3&#x00A0;V. We attribute these improvements to the MQW structure which can extend the exciton distribution and avoid space charge accumulation in the EML.
URI: http://localhost/handle/Hannan/179272
http://localhost/handle/Hannan/646630
ISSN: 1551-319X
1558-9323
volume: 12
issue: 12
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7580594.pdf324.15 kBAdobe PDFThumbnail
Preview File