Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/635367
Title: Experimental Stress Characterization and Numerical Simulation for Copper Pumping Analysis of Through-Silicon Vias
Authors: Xi Liu;Paragkumar A. Thadesar;Christine L. Taylor;Martin Kunz;Nobumichi Tamura;Muhannad S. Bakir;Suresh K. Sitaraman
subject: through-silicon vias (TSVs)|Copper pumping|finite-element analysis|synchrotron X-ray diffraction
Year: 2016
Publisher: IEEE
Abstract: In this paper, a 3-D thermomechanical model of through-silicon vias (TSVs) has been analyzed and verified with in situ microscale strain measurements by synchrotron X-ray microdiffraction. Thereafter, a comprehensive stress/strain analysis on copper pumping and back-end-of-line (BEOL) cracking issues has been carried out. In addition, a design-of-experiments-based approach has been used to understand the effect of various parameters on copper pumping and BEOL stress. The results show that the smaller TSV diameter and thinner silicon die help reduce the copper pumping and thus mitigate BEOL stress.
URI: http://localhost/handle/Hannan/172423
http://localhost/handle/Hannan/635367
ISSN: 2156-3950
2156-3985
volume: 6
issue: 7
Appears in Collections:2016

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Title: Experimental Stress Characterization and Numerical Simulation for Copper Pumping Analysis of Through-Silicon Vias
Authors: Xi Liu;Paragkumar A. Thadesar;Christine L. Taylor;Martin Kunz;Nobumichi Tamura;Muhannad S. Bakir;Suresh K. Sitaraman
subject: through-silicon vias (TSVs)|Copper pumping|finite-element analysis|synchrotron X-ray diffraction
Year: 2016
Publisher: IEEE
Abstract: In this paper, a 3-D thermomechanical model of through-silicon vias (TSVs) has been analyzed and verified with in situ microscale strain measurements by synchrotron X-ray microdiffraction. Thereafter, a comprehensive stress/strain analysis on copper pumping and back-end-of-line (BEOL) cracking issues has been carried out. In addition, a design-of-experiments-based approach has been used to understand the effect of various parameters on copper pumping and BEOL stress. The results show that the smaller TSV diameter and thinner silicon die help reduce the copper pumping and thus mitigate BEOL stress.
URI: http://localhost/handle/Hannan/172423
http://localhost/handle/Hannan/635367
ISSN: 2156-3950
2156-3985
volume: 6
issue: 7
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7389346.pdf2.78 MBAdobe PDFThumbnail
Preview File
Title: Experimental Stress Characterization and Numerical Simulation for Copper Pumping Analysis of Through-Silicon Vias
Authors: Xi Liu;Paragkumar A. Thadesar;Christine L. Taylor;Martin Kunz;Nobumichi Tamura;Muhannad S. Bakir;Suresh K. Sitaraman
subject: through-silicon vias (TSVs)|Copper pumping|finite-element analysis|synchrotron X-ray diffraction
Year: 2016
Publisher: IEEE
Abstract: In this paper, a 3-D thermomechanical model of through-silicon vias (TSVs) has been analyzed and verified with in situ microscale strain measurements by synchrotron X-ray microdiffraction. Thereafter, a comprehensive stress/strain analysis on copper pumping and back-end-of-line (BEOL) cracking issues has been carried out. In addition, a design-of-experiments-based approach has been used to understand the effect of various parameters on copper pumping and BEOL stress. The results show that the smaller TSV diameter and thinner silicon die help reduce the copper pumping and thus mitigate BEOL stress.
URI: http://localhost/handle/Hannan/172423
http://localhost/handle/Hannan/635367
ISSN: 2156-3950
2156-3985
volume: 6
issue: 7
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7389346.pdf2.78 MBAdobe PDFThumbnail
Preview File