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Title: | Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology |
Authors: | Zhuojun Chen;Min Lin;Yunlong Zheng;Zuodong Wei;Shuigen Huang;Shichang Zou |
subject: | Heavy-ion testing|radiation hardening by design|single-event transients|pulsed-laser testing|phase-locked loop|PD-SOI |
Year: | 2016 |
Publisher: | IEEE |
Abstract: | In this paper, a radiation-tolerant phase-locked loop (PLL) is designed and fabricated with 130 nm PD-SOI technology. A current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (DCC) layout of the complementary switches. Besides, the stacked SOI transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. The experimental results show that the proposed PLL has no significant jitter variations under heavy-ion experiments, compared with TMR-hardened PLL. Besides, pulsed-laser testing comprehensively characterizes the single-event transients of the PLL and demonstrates its radiation tolerant performance. |
URI: | http://localhost/handle/Hannan/183259 http://localhost/handle/Hannan/631930 |
ISSN: | 0018-9499 1558-1578 |
volume: | 63 |
issue: | 4 |
Appears in Collections: | 2016 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
7518647.pdf | 1.52 MB | Adobe PDF | ![]() Preview File |
Title: | Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology |
Authors: | Zhuojun Chen;Min Lin;Yunlong Zheng;Zuodong Wei;Shuigen Huang;Shichang Zou |
subject: | Heavy-ion testing|radiation hardening by design|single-event transients|pulsed-laser testing|phase-locked loop|PD-SOI |
Year: | 2016 |
Publisher: | IEEE |
Abstract: | In this paper, a radiation-tolerant phase-locked loop (PLL) is designed and fabricated with 130 nm PD-SOI technology. A current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (DCC) layout of the complementary switches. Besides, the stacked SOI transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. The experimental results show that the proposed PLL has no significant jitter variations under heavy-ion experiments, compared with TMR-hardened PLL. Besides, pulsed-laser testing comprehensively characterizes the single-event transients of the PLL and demonstrates its radiation tolerant performance. |
URI: | http://localhost/handle/Hannan/183259 http://localhost/handle/Hannan/631930 |
ISSN: | 0018-9499 1558-1578 |
volume: | 63 |
issue: | 4 |
Appears in Collections: | 2016 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
7518647.pdf | 1.52 MB | Adobe PDF | ![]() Preview File |
Title: | Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology |
Authors: | Zhuojun Chen;Min Lin;Yunlong Zheng;Zuodong Wei;Shuigen Huang;Shichang Zou |
subject: | Heavy-ion testing|radiation hardening by design|single-event transients|pulsed-laser testing|phase-locked loop|PD-SOI |
Year: | 2016 |
Publisher: | IEEE |
Abstract: | In this paper, a radiation-tolerant phase-locked loop (PLL) is designed and fabricated with 130 nm PD-SOI technology. A current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (DCC) layout of the complementary switches. Besides, the stacked SOI transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. The experimental results show that the proposed PLL has no significant jitter variations under heavy-ion experiments, compared with TMR-hardened PLL. Besides, pulsed-laser testing comprehensively characterizes the single-event transients of the PLL and demonstrates its radiation tolerant performance. |
URI: | http://localhost/handle/Hannan/183259 http://localhost/handle/Hannan/631930 |
ISSN: | 0018-9499 1558-1578 |
volume: | 63 |
issue: | 4 |
Appears in Collections: | 2016 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
7518647.pdf | 1.52 MB | Adobe PDF | ![]() Preview File |