Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/631930
Title: Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology
Authors: Zhuojun Chen;Min Lin;Yunlong Zheng;Zuodong Wei;Shuigen Huang;Shichang Zou
subject: Heavy-ion testing|radiation hardening by design|single-event transients|pulsed-laser testing|phase-locked loop|PD-SOI
Year: 2016
Publisher: IEEE
Abstract: In this paper, a radiation-tolerant phase-locked loop (PLL) is designed and fabricated with 130 nm PD-SOI technology. A current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (DCC) layout of the complementary switches. Besides, the stacked SOI transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. The experimental results show that the proposed PLL has no significant jitter variations under heavy-ion experiments, compared with TMR-hardened PLL. Besides, pulsed-laser testing comprehensively characterizes the single-event transients of the PLL and demonstrates its radiation tolerant performance.
URI: http://localhost/handle/Hannan/183259
http://localhost/handle/Hannan/631930
ISSN: 0018-9499
1558-1578
volume: 63
issue: 4
Appears in Collections:2016

Files in This Item:
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Title: Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology
Authors: Zhuojun Chen;Min Lin;Yunlong Zheng;Zuodong Wei;Shuigen Huang;Shichang Zou
subject: Heavy-ion testing|radiation hardening by design|single-event transients|pulsed-laser testing|phase-locked loop|PD-SOI
Year: 2016
Publisher: IEEE
Abstract: In this paper, a radiation-tolerant phase-locked loop (PLL) is designed and fabricated with 130 nm PD-SOI technology. A current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (DCC) layout of the complementary switches. Besides, the stacked SOI transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. The experimental results show that the proposed PLL has no significant jitter variations under heavy-ion experiments, compared with TMR-hardened PLL. Besides, pulsed-laser testing comprehensively characterizes the single-event transients of the PLL and demonstrates its radiation tolerant performance.
URI: http://localhost/handle/Hannan/183259
http://localhost/handle/Hannan/631930
ISSN: 0018-9499
1558-1578
volume: 63
issue: 4
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7518647.pdf1.52 MBAdobe PDFThumbnail
Preview File
Title: Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology
Authors: Zhuojun Chen;Min Lin;Yunlong Zheng;Zuodong Wei;Shuigen Huang;Shichang Zou
subject: Heavy-ion testing|radiation hardening by design|single-event transients|pulsed-laser testing|phase-locked loop|PD-SOI
Year: 2016
Publisher: IEEE
Abstract: In this paper, a radiation-tolerant phase-locked loop (PLL) is designed and fabricated with 130 nm PD-SOI technology. A current-based charge pump is hardened using a current compensation technique in combination with the differential charge cancellation (DCC) layout of the complementary switches. Besides, the stacked SOI transistors are employed to mitigate single-event effects of the voltage-controlled oscillator. The experimental results show that the proposed PLL has no significant jitter variations under heavy-ion experiments, compared with TMR-hardened PLL. Besides, pulsed-laser testing comprehensively characterizes the single-event transients of the PLL and demonstrates its radiation tolerant performance.
URI: http://localhost/handle/Hannan/183259
http://localhost/handle/Hannan/631930
ISSN: 0018-9499
1558-1578
volume: 63
issue: 4
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7518647.pdf1.52 MBAdobe PDFThumbnail
Preview File