Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/631068
Title: Wideband Modeling and Characterization of Differential Through-Silicon Vias for 3-D ICs
Authors: Wen-Sheng Zhao;Jie Zheng;Feng Liang;Kuiwen Xu;Xi Chen;Gaofeng Wang
subject: equivalent-circuit model|forward transmission coefficient.|differential through-silicon vias (D-TSVs)|Attenuation constant|characteristic impedance
Year: 2016
Publisher: IEEE
Abstract: This paper presents the wideband modeling and analysis of differential through-silicon vias (D-TSVs) in 3-D ICs. An equivalent-circuit model of the ground-signal-signal-ground-type D-TSVs is given and validated against a commercial full-wave electromagnetic simulation tool. The common- and differential-mode impedances are extracted using the partial-element equivalent-circuit method, while the admittances are calculated analytically, with the MOS effects considered and treated appropriately. The circuit model can also be used for studying the differential annular TSVs (ATSVs). It is shown that the ATSVs are more suitable for transmitting differential signals in comparison with the cylindrical TSVs. Based on the equivalent-circuit model, the characteristic impedances and the forward transmission coefficients of the D-TSVs made of Cu and carbon nanotubes are characterized and compared under different settings of frequencies and temperatures.
URI: http://localhost/handle/Hannan/182788
http://localhost/handle/Hannan/631068
ISSN: 0018-9383
1557-9646
volume: 63
issue: 3
Appears in Collections:2016

Files in This Item:
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Title: Wideband Modeling and Characterization of Differential Through-Silicon Vias for 3-D ICs
Authors: Wen-Sheng Zhao;Jie Zheng;Feng Liang;Kuiwen Xu;Xi Chen;Gaofeng Wang
subject: equivalent-circuit model|forward transmission coefficient.|differential through-silicon vias (D-TSVs)|Attenuation constant|characteristic impedance
Year: 2016
Publisher: IEEE
Abstract: This paper presents the wideband modeling and analysis of differential through-silicon vias (D-TSVs) in 3-D ICs. An equivalent-circuit model of the ground-signal-signal-ground-type D-TSVs is given and validated against a commercial full-wave electromagnetic simulation tool. The common- and differential-mode impedances are extracted using the partial-element equivalent-circuit method, while the admittances are calculated analytically, with the MOS effects considered and treated appropriately. The circuit model can also be used for studying the differential annular TSVs (ATSVs). It is shown that the ATSVs are more suitable for transmitting differential signals in comparison with the cylindrical TSVs. Based on the equivalent-circuit model, the characteristic impedances and the forward transmission coefficients of the D-TSVs made of Cu and carbon nanotubes are characterized and compared under different settings of frequencies and temperatures.
URI: http://localhost/handle/Hannan/182788
http://localhost/handle/Hannan/631068
ISSN: 0018-9383
1557-9646
volume: 63
issue: 3
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7390230.pdf2.62 MBAdobe PDFThumbnail
Preview File
Title: Wideband Modeling and Characterization of Differential Through-Silicon Vias for 3-D ICs
Authors: Wen-Sheng Zhao;Jie Zheng;Feng Liang;Kuiwen Xu;Xi Chen;Gaofeng Wang
subject: equivalent-circuit model|forward transmission coefficient.|differential through-silicon vias (D-TSVs)|Attenuation constant|characteristic impedance
Year: 2016
Publisher: IEEE
Abstract: This paper presents the wideband modeling and analysis of differential through-silicon vias (D-TSVs) in 3-D ICs. An equivalent-circuit model of the ground-signal-signal-ground-type D-TSVs is given and validated against a commercial full-wave electromagnetic simulation tool. The common- and differential-mode impedances are extracted using the partial-element equivalent-circuit method, while the admittances are calculated analytically, with the MOS effects considered and treated appropriately. The circuit model can also be used for studying the differential annular TSVs (ATSVs). It is shown that the ATSVs are more suitable for transmitting differential signals in comparison with the cylindrical TSVs. Based on the equivalent-circuit model, the characteristic impedances and the forward transmission coefficients of the D-TSVs made of Cu and carbon nanotubes are characterized and compared under different settings of frequencies and temperatures.
URI: http://localhost/handle/Hannan/182788
http://localhost/handle/Hannan/631068
ISSN: 0018-9383
1557-9646
volume: 63
issue: 3
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7390230.pdf2.62 MBAdobe PDFThumbnail
Preview File