Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/628025
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dc.contributor.authorNa Lien_US
dc.contributor.authorJunfa Maoen_US
dc.contributor.authorWen-Sheng Zhaoen_US
dc.contributor.authorMin Tangen_US
dc.contributor.authorWenchao Chenen_US
dc.contributor.authorWen-Yan Yinen_US
dc.date.accessioned2020-05-20T09:39:29Z-
dc.date.available2020-05-20T09:39:29Z-
dc.date.issued2016en_US
dc.identifier.issn2156-3950en_US
dc.identifier.issn2156-3985en_US
dc.identifier.other10.1109/TCPMT.2016.2538298en_US
dc.identifier.urihttp://localhost/handle/Hannan/170888en_US
dc.identifier.urihttp://localhost/handle/Hannan/628025-
dc.description.abstractElectrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.en_US
dc.publisherIEEEen_US
dc.relation.haspart7444192.pdfen_US
dc.subjectthrough-silicon via (TSV).|carbon-based heterogeneous interconnects|finite-element method (FEM)|Carbon nanotube (CNT)|electrothermal cosimulation|electrostatic discharge (ESD)|grapheneen_US
dc.titleElectrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnectsen_US
dc.typeArticleen_US
dc.journal.volume6en_US
dc.journal.issue4en_US
dc.journal.titleIEEE Transactions on Components, Packaging and Manufacturing Technologyen_US
Appears in Collections:2016

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Full metadata record
DC FieldValueLanguage
dc.contributor.authorNa Lien_US
dc.contributor.authorJunfa Maoen_US
dc.contributor.authorWen-Sheng Zhaoen_US
dc.contributor.authorMin Tangen_US
dc.contributor.authorWenchao Chenen_US
dc.contributor.authorWen-Yan Yinen_US
dc.date.accessioned2020-05-20T09:39:29Z-
dc.date.available2020-05-20T09:39:29Z-
dc.date.issued2016en_US
dc.identifier.issn2156-3950en_US
dc.identifier.issn2156-3985en_US
dc.identifier.other10.1109/TCPMT.2016.2538298en_US
dc.identifier.urihttp://localhost/handle/Hannan/170888en_US
dc.identifier.urihttp://localhost/handle/Hannan/628025-
dc.description.abstractElectrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.en_US
dc.publisherIEEEen_US
dc.relation.haspart7444192.pdfen_US
dc.subjectthrough-silicon via (TSV).|carbon-based heterogeneous interconnects|finite-element method (FEM)|Carbon nanotube (CNT)|electrothermal cosimulation|electrostatic discharge (ESD)|grapheneen_US
dc.titleElectrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnectsen_US
dc.typeArticleen_US
dc.journal.volume6en_US
dc.journal.issue4en_US
dc.journal.titleIEEE Transactions on Components, Packaging and Manufacturing Technologyen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7444192.pdf2.48 MBAdobe PDFThumbnail
Preview File
Full metadata record
DC FieldValueLanguage
dc.contributor.authorNa Lien_US
dc.contributor.authorJunfa Maoen_US
dc.contributor.authorWen-Sheng Zhaoen_US
dc.contributor.authorMin Tangen_US
dc.contributor.authorWenchao Chenen_US
dc.contributor.authorWen-Yan Yinen_US
dc.date.accessioned2020-05-20T09:39:29Z-
dc.date.available2020-05-20T09:39:29Z-
dc.date.issued2016en_US
dc.identifier.issn2156-3950en_US
dc.identifier.issn2156-3985en_US
dc.identifier.other10.1109/TCPMT.2016.2538298en_US
dc.identifier.urihttp://localhost/handle/Hannan/170888en_US
dc.identifier.urihttp://localhost/handle/Hannan/628025-
dc.description.abstractElectrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.en_US
dc.publisherIEEEen_US
dc.relation.haspart7444192.pdfen_US
dc.subjectthrough-silicon via (TSV).|carbon-based heterogeneous interconnects|finite-element method (FEM)|Carbon nanotube (CNT)|electrothermal cosimulation|electrostatic discharge (ESD)|grapheneen_US
dc.titleElectrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnectsen_US
dc.typeArticleen_US
dc.journal.volume6en_US
dc.journal.issue4en_US
dc.journal.titleIEEE Transactions on Components, Packaging and Manufacturing Technologyen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7444192.pdf2.48 MBAdobe PDFThumbnail
Preview File