جهت دسترسی به کاربرگه ی زیر، از این لینک استفاده کنید. http://localhost/handle/Hannan/628025
عنوان: Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects
پدیدآورنده: Na Li;Junfa Mao;Wen-Sheng Zhao;Min Tang;Wenchao Chen;Wen-Yan Yin
کلید واژه ها: through-silicon via (TSV).|carbon-based heterogeneous interconnects|finite-element method (FEM)|Carbon nanotube (CNT)|electrothermal cosimulation|electrostatic discharge (ESD)|graphene
تاریخ انتشار: 2016
ناشر: IEEE
چکیده: Electrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.
آدرس: http://localhost/handle/Hannan/170888
http://localhost/handle/Hannan/628025
ISSN: 2156-3950
2156-3985
دوره: 6
شماره: 4
مجموعه(های):2016

پیوست های این کاربرگه
فایل توضیحات اندازهفرمت  
7444192.pdf2.48 MBAdobe PDFتصویر
مشاهده فایل
عنوان: Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects
پدیدآورنده: Na Li;Junfa Mao;Wen-Sheng Zhao;Min Tang;Wenchao Chen;Wen-Yan Yin
کلید واژه ها: through-silicon via (TSV).|carbon-based heterogeneous interconnects|finite-element method (FEM)|Carbon nanotube (CNT)|electrothermal cosimulation|electrostatic discharge (ESD)|graphene
تاریخ انتشار: 2016
ناشر: IEEE
چکیده: Electrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.
آدرس: http://localhost/handle/Hannan/170888
http://localhost/handle/Hannan/628025
ISSN: 2156-3950
2156-3985
دوره: 6
شماره: 4
مجموعه(های):2016

پیوست های این کاربرگه
فایل توضیحات اندازهفرمت  
7444192.pdf2.48 MBAdobe PDFتصویر
مشاهده فایل
عنوان: Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects
پدیدآورنده: Na Li;Junfa Mao;Wen-Sheng Zhao;Min Tang;Wenchao Chen;Wen-Yan Yin
کلید واژه ها: through-silicon via (TSV).|carbon-based heterogeneous interconnects|finite-element method (FEM)|Carbon nanotube (CNT)|electrothermal cosimulation|electrostatic discharge (ESD)|graphene
تاریخ انتشار: 2016
ناشر: IEEE
چکیده: Electrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.
آدرس: http://localhost/handle/Hannan/170888
http://localhost/handle/Hannan/628025
ISSN: 2156-3950
2156-3985
دوره: 6
شماره: 4
مجموعه(های):2016

پیوست های این کاربرگه
فایل توضیحات اندازهفرمت  
7444192.pdf2.48 MBAdobe PDFتصویر
مشاهده فایل