Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/628025
Title: Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects
Authors: Na Li;Junfa Mao;Wen-Sheng Zhao;Min Tang;Wenchao Chen;Wen-Yan Yin
subject: through-silicon via (TSV).|carbon-based heterogeneous interconnects|finite-element method (FEM)|Carbon nanotube (CNT)|electrothermal cosimulation|electrostatic discharge (ESD)|graphene
Year: 2016
Publisher: IEEE
Abstract: Electrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.
URI: http://localhost/handle/Hannan/170888
http://localhost/handle/Hannan/628025
ISSN: 2156-3950
2156-3985
volume: 6
issue: 4
Appears in Collections:2016

Files in This Item:
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Title: Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects
Authors: Na Li;Junfa Mao;Wen-Sheng Zhao;Min Tang;Wenchao Chen;Wen-Yan Yin
subject: through-silicon via (TSV).|carbon-based heterogeneous interconnects|finite-element method (FEM)|Carbon nanotube (CNT)|electrothermal cosimulation|electrostatic discharge (ESD)|graphene
Year: 2016
Publisher: IEEE
Abstract: Electrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.
URI: http://localhost/handle/Hannan/170888
http://localhost/handle/Hannan/628025
ISSN: 2156-3950
2156-3985
volume: 6
issue: 4
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7444192.pdf2.48 MBAdobe PDFThumbnail
Preview File
Title: Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects
Authors: Na Li;Junfa Mao;Wen-Sheng Zhao;Min Tang;Wenchao Chen;Wen-Yan Yin
subject: through-silicon via (TSV).|carbon-based heterogeneous interconnects|finite-element method (FEM)|Carbon nanotube (CNT)|electrothermal cosimulation|electrostatic discharge (ESD)|graphene
Year: 2016
Publisher: IEEE
Abstract: Electrothermal characteristics of some novel 3-D carbon-based heterogeneous interconnects, consisting of vertical carbon nanotube bundle via and horizontal multilayer graphene, are investigated by utilizing in-house developed algorithm based on a finite-element method. With present fabrication capability, these heterogeneous interconnects can have larger electrical resistance but smaller thermal resistance in comparison with their Cu counterpart. Both the local on-chip interconnects for ballistic regime and global through-silicon via channel for diffusive regime are evaluated numerically, and their 3-D transient temperature distribution and hot spots are characterized and compared. During the electrothermal cosimulation, the anisotropic property of electrical and thermal conductivities of carbon nanomaterials is treated in an appropriate way. It is believed that this paper will be useful for the design as well as the realization of new generation carbon-based interconnects with high reliability and better thermal performance.
URI: http://localhost/handle/Hannan/170888
http://localhost/handle/Hannan/628025
ISSN: 2156-3950
2156-3985
volume: 6
issue: 4
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7444192.pdf2.48 MBAdobe PDFThumbnail
Preview File