Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/628024
Title: Electrothermal Characterization in 3-D Resistive Random Access Memory Arrays
Authors: Yandong Luo;Wenchao Chen;Mingzhuo Cheng;Wen-Yan Yin
subject: temperature distribution|retention time|thermal crosstalk|3-D crossbar resistive random access memory (CRRAM) array|electrothermal effect|finite difference
Year: 2016
Publisher: IEEE
Abstract: Resistive random access memory (RRAM) is a promising candidate for next generation nonvolatile memory technology. In this paper, electrothermal simulation in 3-D RRAM arrays is performed by using our in-house developed finite difference algorithm, which is validated by comparing the simulated temperature distribution with its counterpart obtained by commercial software. Both crossbar RRAM array and vertical RRAM array are studied comprehensively with careful consideration of the temperature-dependent constitute parameters. Simulations show that the temperature and thermal crosstalk are sensitive to the size and shape of conductive filament, which can further limit the scaling potential of RRAM array through affecting its reliability, such as retention time, current leakage, and so on. Scaling behavior of 3-D RRAM array is studied, and optimization guidance for reducing thermal crosstalk is proposed. The fabrication inaccuracy resulted cell offset has also been examined for investigation of thermal crosstalk.
URI: http://localhost/handle/Hannan/170887
http://localhost/handle/Hannan/628024
ISSN: 0018-9383
1557-9646
volume: 63
issue: 12
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7733060.pdf3.04 MBAdobe PDFThumbnail
Preview File
Title: Electrothermal Characterization in 3-D Resistive Random Access Memory Arrays
Authors: Yandong Luo;Wenchao Chen;Mingzhuo Cheng;Wen-Yan Yin
subject: temperature distribution|retention time|thermal crosstalk|3-D crossbar resistive random access memory (CRRAM) array|electrothermal effect|finite difference
Year: 2016
Publisher: IEEE
Abstract: Resistive random access memory (RRAM) is a promising candidate for next generation nonvolatile memory technology. In this paper, electrothermal simulation in 3-D RRAM arrays is performed by using our in-house developed finite difference algorithm, which is validated by comparing the simulated temperature distribution with its counterpart obtained by commercial software. Both crossbar RRAM array and vertical RRAM array are studied comprehensively with careful consideration of the temperature-dependent constitute parameters. Simulations show that the temperature and thermal crosstalk are sensitive to the size and shape of conductive filament, which can further limit the scaling potential of RRAM array through affecting its reliability, such as retention time, current leakage, and so on. Scaling behavior of 3-D RRAM array is studied, and optimization guidance for reducing thermal crosstalk is proposed. The fabrication inaccuracy resulted cell offset has also been examined for investigation of thermal crosstalk.
URI: http://localhost/handle/Hannan/170887
http://localhost/handle/Hannan/628024
ISSN: 0018-9383
1557-9646
volume: 63
issue: 12
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7733060.pdf3.04 MBAdobe PDFThumbnail
Preview File
Title: Electrothermal Characterization in 3-D Resistive Random Access Memory Arrays
Authors: Yandong Luo;Wenchao Chen;Mingzhuo Cheng;Wen-Yan Yin
subject: temperature distribution|retention time|thermal crosstalk|3-D crossbar resistive random access memory (CRRAM) array|electrothermal effect|finite difference
Year: 2016
Publisher: IEEE
Abstract: Resistive random access memory (RRAM) is a promising candidate for next generation nonvolatile memory technology. In this paper, electrothermal simulation in 3-D RRAM arrays is performed by using our in-house developed finite difference algorithm, which is validated by comparing the simulated temperature distribution with its counterpart obtained by commercial software. Both crossbar RRAM array and vertical RRAM array are studied comprehensively with careful consideration of the temperature-dependent constitute parameters. Simulations show that the temperature and thermal crosstalk are sensitive to the size and shape of conductive filament, which can further limit the scaling potential of RRAM array through affecting its reliability, such as retention time, current leakage, and so on. Scaling behavior of 3-D RRAM array is studied, and optimization guidance for reducing thermal crosstalk is proposed. The fabrication inaccuracy resulted cell offset has also been examined for investigation of thermal crosstalk.
URI: http://localhost/handle/Hannan/170887
http://localhost/handle/Hannan/628024
ISSN: 0018-9383
1557-9646
volume: 63
issue: 12
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7733060.pdf3.04 MBAdobe PDFThumbnail
Preview File