Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/626222
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dc.contributor.authorHongyan Yuen_US
dc.contributor.authorLijun Yuanen_US
dc.contributor.authorLi Taoen_US
dc.contributor.authorWeixi Chenen_US
dc.contributor.authorYanping Lien_US
dc.contributor.authorYing Dingen_US
dc.contributor.authorGuangzhao Ranen_US
dc.contributor.authorJiaoqing Panen_US
dc.contributor.authorWei Wangen_US
dc.date.accessioned2020-05-20T09:34:12Z-
dc.date.available2020-05-20T09:34:12Z-
dc.date.issued2016en_US
dc.identifier.issn1041-1135en_US
dc.identifier.issn1941-0174en_US
dc.identifier.other10.1109/LPT.2016.2532926en_US
dc.identifier.urihttp://localhost/handle/Hannan/161973en_US
dc.identifier.urihttp://localhost/handle/Hannan/626222-
dc.description.abstractAn evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on a selective area metal bonding method is demonstrated. There are the advantages of good optical field, high thermal performance, and improved carrier and photon confinement by adopting this BRS laser structure. The III-V waveguide with the first-order grating corrugations is fabricated by conventional holographic lithography and standard photolithography. A threshold current as low as 5 mA at room temperature in continuous-wave operation and a side-mode suppression ratio as high as 40 dB with mode-hop free higher than 45 °C were achieved.en_US
dc.publisherIEEEen_US
dc.relation.haspart7421960.pdfen_US
dc.subjectburied ridge stripe structure|selective area metal bonding method|Hybrid laseren_US
dc.titleEvanescent Hybrid Si Laser With Buried Ridge Stripe Structureen_US
dc.typeArticleen_US
dc.journal.volume28en_US
dc.journal.issue10en_US
dc.journal.titleIEEE Photonics Technology Lettersen_US
Appears in Collections:2016

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Full metadata record
DC FieldValueLanguage
dc.contributor.authorHongyan Yuen_US
dc.contributor.authorLijun Yuanen_US
dc.contributor.authorLi Taoen_US
dc.contributor.authorWeixi Chenen_US
dc.contributor.authorYanping Lien_US
dc.contributor.authorYing Dingen_US
dc.contributor.authorGuangzhao Ranen_US
dc.contributor.authorJiaoqing Panen_US
dc.contributor.authorWei Wangen_US
dc.date.accessioned2020-05-20T09:34:12Z-
dc.date.available2020-05-20T09:34:12Z-
dc.date.issued2016en_US
dc.identifier.issn1041-1135en_US
dc.identifier.issn1941-0174en_US
dc.identifier.other10.1109/LPT.2016.2532926en_US
dc.identifier.urihttp://localhost/handle/Hannan/161973en_US
dc.identifier.urihttp://localhost/handle/Hannan/626222-
dc.description.abstractAn evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on a selective area metal bonding method is demonstrated. There are the advantages of good optical field, high thermal performance, and improved carrier and photon confinement by adopting this BRS laser structure. The III-V waveguide with the first-order grating corrugations is fabricated by conventional holographic lithography and standard photolithography. A threshold current as low as 5 mA at room temperature in continuous-wave operation and a side-mode suppression ratio as high as 40 dB with mode-hop free higher than 45 °C were achieved.en_US
dc.publisherIEEEen_US
dc.relation.haspart7421960.pdfen_US
dc.subjectburied ridge stripe structure|selective area metal bonding method|Hybrid laseren_US
dc.titleEvanescent Hybrid Si Laser With Buried Ridge Stripe Structureen_US
dc.typeArticleen_US
dc.journal.volume28en_US
dc.journal.issue10en_US
dc.journal.titleIEEE Photonics Technology Lettersen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7421960.pdf1.13 MBAdobe PDFThumbnail
Preview File
Full metadata record
DC FieldValueLanguage
dc.contributor.authorHongyan Yuen_US
dc.contributor.authorLijun Yuanen_US
dc.contributor.authorLi Taoen_US
dc.contributor.authorWeixi Chenen_US
dc.contributor.authorYanping Lien_US
dc.contributor.authorYing Dingen_US
dc.contributor.authorGuangzhao Ranen_US
dc.contributor.authorJiaoqing Panen_US
dc.contributor.authorWei Wangen_US
dc.date.accessioned2020-05-20T09:34:12Z-
dc.date.available2020-05-20T09:34:12Z-
dc.date.issued2016en_US
dc.identifier.issn1041-1135en_US
dc.identifier.issn1941-0174en_US
dc.identifier.other10.1109/LPT.2016.2532926en_US
dc.identifier.urihttp://localhost/handle/Hannan/161973en_US
dc.identifier.urihttp://localhost/handle/Hannan/626222-
dc.description.abstractAn evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on a selective area metal bonding method is demonstrated. There are the advantages of good optical field, high thermal performance, and improved carrier and photon confinement by adopting this BRS laser structure. The III-V waveguide with the first-order grating corrugations is fabricated by conventional holographic lithography and standard photolithography. A threshold current as low as 5 mA at room temperature in continuous-wave operation and a side-mode suppression ratio as high as 40 dB with mode-hop free higher than 45 °C were achieved.en_US
dc.publisherIEEEen_US
dc.relation.haspart7421960.pdfen_US
dc.subjectburied ridge stripe structure|selective area metal bonding method|Hybrid laseren_US
dc.titleEvanescent Hybrid Si Laser With Buried Ridge Stripe Structureen_US
dc.typeArticleen_US
dc.journal.volume28en_US
dc.journal.issue10en_US
dc.journal.titleIEEE Photonics Technology Lettersen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7421960.pdf1.13 MBAdobe PDFThumbnail
Preview File