Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/586731
Title: Design and Analysis of 2-μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer
Authors: Xiang Li;Hong Wang;Zhongliang Qiao;Yu Zhang;Zhichuan Niu;Cunzhu Tong;Chongyang Liu
subject: GaSb laser|tapered structure|silicon photonics|Quantum well|silicon-on-insulator (SOI)|Al<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2</sub>O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3</sub> wafer bonding
Year: 2016
Publisher: IEEE
Abstract: GaSb-based quantum well (QW) laser diode, with emission wavelength ~2 &#x03BC;m, integrated onto a silicon-on-insulator (SOI) waveguide circuit through a high-thermal-conductivity Al<sub>2</sub>O<sub>3</sub> bonding layer has been designed and analyzed. Prior to bonding, the fabricated Fabry-Perot GaSb QW laser worked under continuous wave operation at room temperature, with a low threshold current of 37 mA at the emission wavelength of 2019 nm, demonstrating high material quality. A tapered structure has been used for evanescent coupling of light from the GaSb laser to the underlying Si waveguide. Instead of using SiO<sub>2</sub> for direct bonding or Benzocyclobutene for adhesive bonding, the use of Al<sub>2</sub>O<sub>3</sub> to directly bond GaSb lasers onto SOI wafers is proposed. The optical mode distribution simulations by a beam propagation method software show that light can be coupled efficiently to the underlying Si waveguide through the tapered structure without compromise in optical coupling efficiency. Furthermore, there is a significant reduction (~70%) in the total thermal resistance compared with the same structure using a SiO<sub>2</sub> bonding layer. Our results suggest that the Al<sub>2</sub>O<sub>3</sub> bonding layer could be a promising candidate for III-V lasers integrated on SOI circuits, where thermal dissipation is very critical.
URI: http://localhost/handle/Hannan/166976
http://localhost/handle/Hannan/586731
ISSN: 1077-260X
1558-4542
volume: 22
issue: 6
Appears in Collections:2016

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Title: Design and Analysis of 2-μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer
Authors: Xiang Li;Hong Wang;Zhongliang Qiao;Yu Zhang;Zhichuan Niu;Cunzhu Tong;Chongyang Liu
subject: GaSb laser|tapered structure|silicon photonics|Quantum well|silicon-on-insulator (SOI)|Al<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2</sub>O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3</sub> wafer bonding
Year: 2016
Publisher: IEEE
Abstract: GaSb-based quantum well (QW) laser diode, with emission wavelength ~2 &#x03BC;m, integrated onto a silicon-on-insulator (SOI) waveguide circuit through a high-thermal-conductivity Al<sub>2</sub>O<sub>3</sub> bonding layer has been designed and analyzed. Prior to bonding, the fabricated Fabry-Perot GaSb QW laser worked under continuous wave operation at room temperature, with a low threshold current of 37 mA at the emission wavelength of 2019 nm, demonstrating high material quality. A tapered structure has been used for evanescent coupling of light from the GaSb laser to the underlying Si waveguide. Instead of using SiO<sub>2</sub> for direct bonding or Benzocyclobutene for adhesive bonding, the use of Al<sub>2</sub>O<sub>3</sub> to directly bond GaSb lasers onto SOI wafers is proposed. The optical mode distribution simulations by a beam propagation method software show that light can be coupled efficiently to the underlying Si waveguide through the tapered structure without compromise in optical coupling efficiency. Furthermore, there is a significant reduction (~70%) in the total thermal resistance compared with the same structure using a SiO<sub>2</sub> bonding layer. Our results suggest that the Al<sub>2</sub>O<sub>3</sub> bonding layer could be a promising candidate for III-V lasers integrated on SOI circuits, where thermal dissipation is very critical.
URI: http://localhost/handle/Hannan/166976
http://localhost/handle/Hannan/586731
ISSN: 1077-260X
1558-4542
volume: 22
issue: 6
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7458797.pdf711.44 kBAdobe PDFThumbnail
Preview File
Title: Design and Analysis of 2-μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer
Authors: Xiang Li;Hong Wang;Zhongliang Qiao;Yu Zhang;Zhichuan Niu;Cunzhu Tong;Chongyang Liu
subject: GaSb laser|tapered structure|silicon photonics|Quantum well|silicon-on-insulator (SOI)|Al<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2</sub>O<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">3</sub> wafer bonding
Year: 2016
Publisher: IEEE
Abstract: GaSb-based quantum well (QW) laser diode, with emission wavelength ~2 &#x03BC;m, integrated onto a silicon-on-insulator (SOI) waveguide circuit through a high-thermal-conductivity Al<sub>2</sub>O<sub>3</sub> bonding layer has been designed and analyzed. Prior to bonding, the fabricated Fabry-Perot GaSb QW laser worked under continuous wave operation at room temperature, with a low threshold current of 37 mA at the emission wavelength of 2019 nm, demonstrating high material quality. A tapered structure has been used for evanescent coupling of light from the GaSb laser to the underlying Si waveguide. Instead of using SiO<sub>2</sub> for direct bonding or Benzocyclobutene for adhesive bonding, the use of Al<sub>2</sub>O<sub>3</sub> to directly bond GaSb lasers onto SOI wafers is proposed. The optical mode distribution simulations by a beam propagation method software show that light can be coupled efficiently to the underlying Si waveguide through the tapered structure without compromise in optical coupling efficiency. Furthermore, there is a significant reduction (~70%) in the total thermal resistance compared with the same structure using a SiO<sub>2</sub> bonding layer. Our results suggest that the Al<sub>2</sub>O<sub>3</sub> bonding layer could be a promising candidate for III-V lasers integrated on SOI circuits, where thermal dissipation is very critical.
URI: http://localhost/handle/Hannan/166976
http://localhost/handle/Hannan/586731
ISSN: 1077-260X
1558-4542
volume: 22
issue: 6
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7458797.pdf711.44 kBAdobe PDFThumbnail
Preview File