Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/586571
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dc.contributor.authorTing Huen_US
dc.contributor.authorMohamed Saïd Rouifeden_US
dc.contributor.authorHaodong Qiuen_US
dc.contributor.authorXin Guoen_US
dc.contributor.authorCallum G. Littlejohnsen_US
dc.contributor.authorChongyong Liuen_US
dc.contributor.authorHong Wangen_US
dc.date.accessioned2020-05-20T08:36:11Z-
dc.date.available2020-05-20T08:36:11Z-
dc.date.issued2016en_US
dc.identifier.issn1041-1135en_US
dc.identifier.issn1941-0174en_US
dc.identifier.other10.1109/LPT.2016.2517196en_US
dc.identifier.urihttp://localhost/handle/Hannan/166930en_US
dc.identifier.urihttp://localhost/handle/Hannan/586571-
dc.description.abstractA fabrication-tolerant mid-infrared silicon polarization splitter and rotator (PSR) based on a partially etched grating-assisted coupler is proposed. The design of the partially etched structure allows to use different cladding layers, such as SiO2, to make the device compatible with the metal back-end of line process. Moreover, by using the grating-assisted coupler, the device is no longer limited by the precise requirement of the coupling length and strength as those in its counterparts based on directional couplers. The simulation results show that the PSR can work over a wide spectral range of 50 nm around the mid-infrared wavelength of 2.5 μm with the typical transverse electric (TE) to transverse magnetic (TM) polarization conversion efficiency of 96.83%, the conversion loss of -0.97 dB, and the polarization crosstalk of -21.48 dB. The TM-to-TM through insertion loss is around -0.76 dB. The effects of the fabrication errors are analyzed. The numerical simulation results demonstrate that the device has a good fabrication tolerance larger than 45 nm.en_US
dc.publisherIEEEen_US
dc.relation.haspart7378857.pdfen_US
dc.subjectSilicon on insulator (SOI)|mid-infrared|grating-assisted coupler|polarization splitter and rotatoren_US
dc.titleA Polarization Splitter and Rotator Based on a Partially Etched Grating-Assisted Coupleren_US
dc.typeArticleen_US
dc.journal.volume28en_US
dc.journal.issue8en_US
dc.journal.titleIEEE Photonics Technology Lettersen_US
Appears in Collections:2016

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Full metadata record
DC FieldValueLanguage
dc.contributor.authorTing Huen_US
dc.contributor.authorMohamed Saïd Rouifeden_US
dc.contributor.authorHaodong Qiuen_US
dc.contributor.authorXin Guoen_US
dc.contributor.authorCallum G. Littlejohnsen_US
dc.contributor.authorChongyong Liuen_US
dc.contributor.authorHong Wangen_US
dc.date.accessioned2020-05-20T08:36:11Z-
dc.date.available2020-05-20T08:36:11Z-
dc.date.issued2016en_US
dc.identifier.issn1041-1135en_US
dc.identifier.issn1941-0174en_US
dc.identifier.other10.1109/LPT.2016.2517196en_US
dc.identifier.urihttp://localhost/handle/Hannan/166930en_US
dc.identifier.urihttp://localhost/handle/Hannan/586571-
dc.description.abstractA fabrication-tolerant mid-infrared silicon polarization splitter and rotator (PSR) based on a partially etched grating-assisted coupler is proposed. The design of the partially etched structure allows to use different cladding layers, such as SiO2, to make the device compatible with the metal back-end of line process. Moreover, by using the grating-assisted coupler, the device is no longer limited by the precise requirement of the coupling length and strength as those in its counterparts based on directional couplers. The simulation results show that the PSR can work over a wide spectral range of 50 nm around the mid-infrared wavelength of 2.5 μm with the typical transverse electric (TE) to transverse magnetic (TM) polarization conversion efficiency of 96.83%, the conversion loss of -0.97 dB, and the polarization crosstalk of -21.48 dB. The TM-to-TM through insertion loss is around -0.76 dB. The effects of the fabrication errors are analyzed. The numerical simulation results demonstrate that the device has a good fabrication tolerance larger than 45 nm.en_US
dc.publisherIEEEen_US
dc.relation.haspart7378857.pdfen_US
dc.subjectSilicon on insulator (SOI)|mid-infrared|grating-assisted coupler|polarization splitter and rotatoren_US
dc.titleA Polarization Splitter and Rotator Based on a Partially Etched Grating-Assisted Coupleren_US
dc.typeArticleen_US
dc.journal.volume28en_US
dc.journal.issue8en_US
dc.journal.titleIEEE Photonics Technology Lettersen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7378857.pdf1.42 MBAdobe PDFThumbnail
Preview File
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTing Huen_US
dc.contributor.authorMohamed Saïd Rouifeden_US
dc.contributor.authorHaodong Qiuen_US
dc.contributor.authorXin Guoen_US
dc.contributor.authorCallum G. Littlejohnsen_US
dc.contributor.authorChongyong Liuen_US
dc.contributor.authorHong Wangen_US
dc.date.accessioned2020-05-20T08:36:11Z-
dc.date.available2020-05-20T08:36:11Z-
dc.date.issued2016en_US
dc.identifier.issn1041-1135en_US
dc.identifier.issn1941-0174en_US
dc.identifier.other10.1109/LPT.2016.2517196en_US
dc.identifier.urihttp://localhost/handle/Hannan/166930en_US
dc.identifier.urihttp://localhost/handle/Hannan/586571-
dc.description.abstractA fabrication-tolerant mid-infrared silicon polarization splitter and rotator (PSR) based on a partially etched grating-assisted coupler is proposed. The design of the partially etched structure allows to use different cladding layers, such as SiO2, to make the device compatible with the metal back-end of line process. Moreover, by using the grating-assisted coupler, the device is no longer limited by the precise requirement of the coupling length and strength as those in its counterparts based on directional couplers. The simulation results show that the PSR can work over a wide spectral range of 50 nm around the mid-infrared wavelength of 2.5 μm with the typical transverse electric (TE) to transverse magnetic (TM) polarization conversion efficiency of 96.83%, the conversion loss of -0.97 dB, and the polarization crosstalk of -21.48 dB. The TM-to-TM through insertion loss is around -0.76 dB. The effects of the fabrication errors are analyzed. The numerical simulation results demonstrate that the device has a good fabrication tolerance larger than 45 nm.en_US
dc.publisherIEEEen_US
dc.relation.haspart7378857.pdfen_US
dc.subjectSilicon on insulator (SOI)|mid-infrared|grating-assisted coupler|polarization splitter and rotatoren_US
dc.titleA Polarization Splitter and Rotator Based on a Partially Etched Grating-Assisted Coupleren_US
dc.typeArticleen_US
dc.journal.volume28en_US
dc.journal.issue8en_US
dc.journal.titleIEEE Photonics Technology Lettersen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7378857.pdf1.42 MBAdobe PDFThumbnail
Preview File