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Title: | A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operation |
Authors: | Wenli Zhang;Xiucheng Huang;Zhengyang Liu;Fred C. Lee;Shuojie She;Weijing Du;Qiang Li |
subject: | packaging;high frequency;stack-die structure;gallium nitride (GaN) high-electron-mobility transistor (HEMT);Cascode structure |
Year: | 2016 |
Publisher: | IEEE |
Abstract: | Lateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMTs ideal for high-frequency, high-efficiency power conversion. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices, for example, by increasing the parasitic inductance and resistance in the current loops of the device. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN semiconductor and low-voltage enhancement-mode Si semiconductor is needed. In this study, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability. |
URI: | http://localhost/handle/Hannan/165371 http://localhost/handle/Hannan/583766 |
ISSN: | 0885-8993 1941-0107 |
volume: | 31 |
issue: | 2 |
Appears in Collections: | 2016 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
7073649.pdf | 1.07 MB | Adobe PDF | ![]() Preview File |
Title: | A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operation |
Authors: | Wenli Zhang;Xiucheng Huang;Zhengyang Liu;Fred C. Lee;Shuojie She;Weijing Du;Qiang Li |
subject: | packaging;high frequency;stack-die structure;gallium nitride (GaN) high-electron-mobility transistor (HEMT);Cascode structure |
Year: | 2016 |
Publisher: | IEEE |
Abstract: | Lateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMTs ideal for high-frequency, high-efficiency power conversion. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices, for example, by increasing the parasitic inductance and resistance in the current loops of the device. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN semiconductor and low-voltage enhancement-mode Si semiconductor is needed. In this study, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability. |
URI: | http://localhost/handle/Hannan/165371 http://localhost/handle/Hannan/583766 |
ISSN: | 0885-8993 1941-0107 |
volume: | 31 |
issue: | 2 |
Appears in Collections: | 2016 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
7073649.pdf | 1.07 MB | Adobe PDF | ![]() Preview File |
Title: | A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operation |
Authors: | Wenli Zhang;Xiucheng Huang;Zhengyang Liu;Fred C. Lee;Shuojie She;Weijing Du;Qiang Li |
subject: | packaging;high frequency;stack-die structure;gallium nitride (GaN) high-electron-mobility transistor (HEMT);Cascode structure |
Year: | 2016 |
Publisher: | IEEE |
Abstract: | Lateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMTs ideal for high-frequency, high-efficiency power conversion. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices, for example, by increasing the parasitic inductance and resistance in the current loops of the device. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN semiconductor and low-voltage enhancement-mode Si semiconductor is needed. In this study, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability. |
URI: | http://localhost/handle/Hannan/165371 http://localhost/handle/Hannan/583766 |
ISSN: | 0885-8993 1941-0107 |
volume: | 31 |
issue: | 2 |
Appears in Collections: | 2016 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
7073649.pdf | 1.07 MB | Adobe PDF | ![]() Preview File |