Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/583766
Full metadata record
DC FieldValueLanguage
dc.contributor.authorWenli Zhangen_US
dc.contributor.authorXiucheng Huangen_US
dc.contributor.authorZhengyang Liuen_US
dc.contributor.authorFred C. Leeen_US
dc.contributor.authorShuojie Sheen_US
dc.contributor.authorWeijing Duen_US
dc.contributor.authorQiang Lien_US
dc.date.accessioned2020-05-20T08:31:58Z-
dc.date.available2020-05-20T08:31:58Z-
dc.date.issued2016en_US
dc.identifier.issn0885-8993en_US
dc.identifier.issn1941-0107en_US
dc.identifier.other10.1109/TPEL.2015.2418572en_US
dc.identifier.urihttp://localhost/handle/Hannan/165371en_US
dc.identifier.urihttp://localhost/handle/Hannan/583766-
dc.description.abstractLateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMTs ideal for high-frequency, high-efficiency power conversion. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices, for example, by increasing the parasitic inductance and resistance in the current loops of the device. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN semiconductor and low-voltage enhancement-mode Si semiconductor is needed. In this study, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability.en_US
dc.publisherIEEEen_US
dc.relation.haspart7073649.pdfen_US
dc.subjectpackagingen_US
dc.subjecthigh frequencyen_US
dc.subjectstack-die structureen_US
dc.subjectgallium nitride (GaN) high-electron-mobility transistor (HEMT)en_US
dc.subjectCascode structureen_US
dc.titleA New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operationen_US
dc.typeArticleen_US
dc.journal.volume31en_US
dc.journal.issue2en_US
dc.journal.titleIEEE Transactions on Power Electronicsen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7073649.pdf1.07 MBAdobe PDFThumbnail
Preview File
Full metadata record
DC FieldValueLanguage
dc.contributor.authorWenli Zhangen_US
dc.contributor.authorXiucheng Huangen_US
dc.contributor.authorZhengyang Liuen_US
dc.contributor.authorFred C. Leeen_US
dc.contributor.authorShuojie Sheen_US
dc.contributor.authorWeijing Duen_US
dc.contributor.authorQiang Lien_US
dc.date.accessioned2020-05-20T08:31:58Z-
dc.date.available2020-05-20T08:31:58Z-
dc.date.issued2016en_US
dc.identifier.issn0885-8993en_US
dc.identifier.issn1941-0107en_US
dc.identifier.other10.1109/TPEL.2015.2418572en_US
dc.identifier.urihttp://localhost/handle/Hannan/165371en_US
dc.identifier.urihttp://localhost/handle/Hannan/583766-
dc.description.abstractLateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMTs ideal for high-frequency, high-efficiency power conversion. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices, for example, by increasing the parasitic inductance and resistance in the current loops of the device. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN semiconductor and low-voltage enhancement-mode Si semiconductor is needed. In this study, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability.en_US
dc.publisherIEEEen_US
dc.relation.haspart7073649.pdfen_US
dc.subjectpackagingen_US
dc.subjecthigh frequencyen_US
dc.subjectstack-die structureen_US
dc.subjectgallium nitride (GaN) high-electron-mobility transistor (HEMT)en_US
dc.subjectCascode structureen_US
dc.titleA New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operationen_US
dc.typeArticleen_US
dc.journal.volume31en_US
dc.journal.issue2en_US
dc.journal.titleIEEE Transactions on Power Electronicsen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7073649.pdf1.07 MBAdobe PDFThumbnail
Preview File
Full metadata record
DC FieldValueLanguage
dc.contributor.authorWenli Zhangen_US
dc.contributor.authorXiucheng Huangen_US
dc.contributor.authorZhengyang Liuen_US
dc.contributor.authorFred C. Leeen_US
dc.contributor.authorShuojie Sheen_US
dc.contributor.authorWeijing Duen_US
dc.contributor.authorQiang Lien_US
dc.date.accessioned2020-05-20T08:31:58Z-
dc.date.available2020-05-20T08:31:58Z-
dc.date.issued2016en_US
dc.identifier.issn0885-8993en_US
dc.identifier.issn1941-0107en_US
dc.identifier.other10.1109/TPEL.2015.2418572en_US
dc.identifier.urihttp://localhost/handle/Hannan/165371en_US
dc.identifier.urihttp://localhost/handle/Hannan/583766-
dc.description.abstractLateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMTs ideal for high-frequency, high-efficiency power conversion. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices, for example, by increasing the parasitic inductance and resistance in the current loops of the device. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN semiconductor and low-voltage enhancement-mode Si semiconductor is needed. In this study, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability.en_US
dc.publisherIEEEen_US
dc.relation.haspart7073649.pdfen_US
dc.subjectpackagingen_US
dc.subjecthigh frequencyen_US
dc.subjectstack-die structureen_US
dc.subjectgallium nitride (GaN) high-electron-mobility transistor (HEMT)en_US
dc.subjectCascode structureen_US
dc.titleA New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operationen_US
dc.typeArticleen_US
dc.journal.volume31en_US
dc.journal.issue2en_US
dc.journal.titleIEEE Transactions on Power Electronicsen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7073649.pdf1.07 MBAdobe PDFThumbnail
Preview File