Please use this identifier to cite or link to this item:
http://localhost/handle/Hannan/583766
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wenli Zhang | en_US |
dc.contributor.author | Xiucheng Huang | en_US |
dc.contributor.author | Zhengyang Liu | en_US |
dc.contributor.author | Fred C. Lee | en_US |
dc.contributor.author | Shuojie She | en_US |
dc.contributor.author | Weijing Du | en_US |
dc.contributor.author | Qiang Li | en_US |
dc.date.accessioned | 2020-05-20T08:31:58Z | - |
dc.date.available | 2020-05-20T08:31:58Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.issn | 0885-8993 | en_US |
dc.identifier.issn | 1941-0107 | en_US |
dc.identifier.other | 10.1109/TPEL.2015.2418572 | en_US |
dc.identifier.uri | http://localhost/handle/Hannan/165371 | en_US |
dc.identifier.uri | http://localhost/handle/Hannan/583766 | - |
dc.description.abstract | Lateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMTs ideal for high-frequency, high-efficiency power conversion. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices, for example, by increasing the parasitic inductance and resistance in the current loops of the device. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN semiconductor and low-voltage enhancement-mode Si semiconductor is needed. In this study, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability. | en_US |
dc.publisher | IEEE | en_US |
dc.relation.haspart | 7073649.pdf | en_US |
dc.subject | packaging | en_US |
dc.subject | high frequency | en_US |
dc.subject | stack-die structure | en_US |
dc.subject | gallium nitride (GaN) high-electron-mobility transistor (HEMT) | en_US |
dc.subject | Cascode structure | en_US |
dc.title | A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operation | en_US |
dc.type | Article | en_US |
dc.journal.volume | 31 | en_US |
dc.journal.issue | 2 | en_US |
dc.journal.title | IEEE Transactions on Power Electronics | en_US |
Appears in Collections: | 2016 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
7073649.pdf | 1.07 MB | Adobe PDF | ![]() Preview File |
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wenli Zhang | en_US |
dc.contributor.author | Xiucheng Huang | en_US |
dc.contributor.author | Zhengyang Liu | en_US |
dc.contributor.author | Fred C. Lee | en_US |
dc.contributor.author | Shuojie She | en_US |
dc.contributor.author | Weijing Du | en_US |
dc.contributor.author | Qiang Li | en_US |
dc.date.accessioned | 2020-05-20T08:31:58Z | - |
dc.date.available | 2020-05-20T08:31:58Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.issn | 0885-8993 | en_US |
dc.identifier.issn | 1941-0107 | en_US |
dc.identifier.other | 10.1109/TPEL.2015.2418572 | en_US |
dc.identifier.uri | http://localhost/handle/Hannan/165371 | en_US |
dc.identifier.uri | http://localhost/handle/Hannan/583766 | - |
dc.description.abstract | Lateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMTs ideal for high-frequency, high-efficiency power conversion. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices, for example, by increasing the parasitic inductance and resistance in the current loops of the device. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN semiconductor and low-voltage enhancement-mode Si semiconductor is needed. In this study, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability. | en_US |
dc.publisher | IEEE | en_US |
dc.relation.haspart | 7073649.pdf | en_US |
dc.subject | packaging | en_US |
dc.subject | high frequency | en_US |
dc.subject | stack-die structure | en_US |
dc.subject | gallium nitride (GaN) high-electron-mobility transistor (HEMT) | en_US |
dc.subject | Cascode structure | en_US |
dc.title | A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operation | en_US |
dc.type | Article | en_US |
dc.journal.volume | 31 | en_US |
dc.journal.issue | 2 | en_US |
dc.journal.title | IEEE Transactions on Power Electronics | en_US |
Appears in Collections: | 2016 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
7073649.pdf | 1.07 MB | Adobe PDF | ![]() Preview File |
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wenli Zhang | en_US |
dc.contributor.author | Xiucheng Huang | en_US |
dc.contributor.author | Zhengyang Liu | en_US |
dc.contributor.author | Fred C. Lee | en_US |
dc.contributor.author | Shuojie She | en_US |
dc.contributor.author | Weijing Du | en_US |
dc.contributor.author | Qiang Li | en_US |
dc.date.accessioned | 2020-05-20T08:31:58Z | - |
dc.date.available | 2020-05-20T08:31:58Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.issn | 0885-8993 | en_US |
dc.identifier.issn | 1941-0107 | en_US |
dc.identifier.other | 10.1109/TPEL.2015.2418572 | en_US |
dc.identifier.uri | http://localhost/handle/Hannan/165371 | en_US |
dc.identifier.uri | http://localhost/handle/Hannan/583766 | - |
dc.description.abstract | Lateral gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) power devices have high current density, high switching speed, and low on-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMTs ideal for high-frequency, high-efficiency power conversion. Using efficient GaN HEMT devices switched at high frequency in power electronic systems could lead to an increase in power density as well as a reduction in the weight, size, and cost of the system. However, conventional packaging configurations often compromise the benefits provided by high-performance GaN HEMT devices, for example, by increasing the parasitic inductance and resistance in the current loops of the device. This undesirable package-induced performance degradation is prominent in the cascode GaN device, where the combination of a high-voltage depletion-mode GaN semiconductor and low-voltage enhancement-mode Si semiconductor is needed. In this study, a new package is introduced for high-voltage cascode GaN devices and is successfully demonstrated to make the device more suitable for megahertz operation. This packaging prototype for cascode GaN devices is fabricated in a power quad flat no-lead format with the new features of a stack-die structure, embedded external capacitor, and flip-chip configuration. The parasitic ringing in hard-switching turn-off and switching losses in soft-switching transitions are both effectively reduced for this newly packaged device compared with a traditional package using the same GaN and Si devices. Improved thermal dissipation capability is also realized using this new package for better reliability. | en_US |
dc.publisher | IEEE | en_US |
dc.relation.haspart | 7073649.pdf | en_US |
dc.subject | packaging | en_US |
dc.subject | high frequency | en_US |
dc.subject | stack-die structure | en_US |
dc.subject | gallium nitride (GaN) high-electron-mobility transistor (HEMT) | en_US |
dc.subject | Cascode structure | en_US |
dc.title | A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz Operation | en_US |
dc.type | Article | en_US |
dc.journal.volume | 31 | en_US |
dc.journal.issue | 2 | en_US |
dc.journal.title | IEEE Transactions on Power Electronics | en_US |
Appears in Collections: | 2016 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
7073649.pdf | 1.07 MB | Adobe PDF | ![]() Preview File |