Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/211473
Title: Fully Coupled Multiphysics Simulation of Crosstalk Effect in Bipolar Resistive Random Access Memory
Authors: Shichao Li;Wenchao Chen;Yandong Luo;Jun Hu;Pingqi Gao;Jichun Ye;Kai Kang;Hongsheng Chen;Erping Li;Wen-Yan Yin
Year: 2017
Publisher: IEEE
Abstract: A versatile multiphysics simulation packet for investigating different resistive random acces memories (RRAMs) is developed in this paper. Heat transfer, electrical conduction, and ion migration in such heterogeneous structure are all taken into consideration. Three fully coupled partial differential equations are solved using our self-developed finite-difference algorithm, where Scharfetter-Gummel method is adopted to simulate ion migration with fast convergence achieved. This packet is validated in comparison with the commercial software based on the finite-element method. With its implementation, complete and clear pictures for crosstalk effect in vertically integrated RRAM are captured and compared, where the effects of key physical and geometrical factors are characterized and understood. Some useful suggestions to mitigate its unfavorable influences are given.
URI: http://localhost/handle/Hannan/211473
volume: 64
issue: 9
More Information: 3647,
3653
Appears in Collections:2017

Files in This Item:
File SizeFormat 
8011604.pdf3.08 MBAdobe PDF
Title: Fully Coupled Multiphysics Simulation of Crosstalk Effect in Bipolar Resistive Random Access Memory
Authors: Shichao Li;Wenchao Chen;Yandong Luo;Jun Hu;Pingqi Gao;Jichun Ye;Kai Kang;Hongsheng Chen;Erping Li;Wen-Yan Yin
Year: 2017
Publisher: IEEE
Abstract: A versatile multiphysics simulation packet for investigating different resistive random acces memories (RRAMs) is developed in this paper. Heat transfer, electrical conduction, and ion migration in such heterogeneous structure are all taken into consideration. Three fully coupled partial differential equations are solved using our self-developed finite-difference algorithm, where Scharfetter-Gummel method is adopted to simulate ion migration with fast convergence achieved. This packet is validated in comparison with the commercial software based on the finite-element method. With its implementation, complete and clear pictures for crosstalk effect in vertically integrated RRAM are captured and compared, where the effects of key physical and geometrical factors are characterized and understood. Some useful suggestions to mitigate its unfavorable influences are given.
URI: http://localhost/handle/Hannan/211473
volume: 64
issue: 9
More Information: 3647,
3653
Appears in Collections:2017

Files in This Item:
File SizeFormat 
8011604.pdf3.08 MBAdobe PDF
Title: Fully Coupled Multiphysics Simulation of Crosstalk Effect in Bipolar Resistive Random Access Memory
Authors: Shichao Li;Wenchao Chen;Yandong Luo;Jun Hu;Pingqi Gao;Jichun Ye;Kai Kang;Hongsheng Chen;Erping Li;Wen-Yan Yin
Year: 2017
Publisher: IEEE
Abstract: A versatile multiphysics simulation packet for investigating different resistive random acces memories (RRAMs) is developed in this paper. Heat transfer, electrical conduction, and ion migration in such heterogeneous structure are all taken into consideration. Three fully coupled partial differential equations are solved using our self-developed finite-difference algorithm, where Scharfetter-Gummel method is adopted to simulate ion migration with fast convergence achieved. This packet is validated in comparison with the commercial software based on the finite-element method. With its implementation, complete and clear pictures for crosstalk effect in vertically integrated RRAM are captured and compared, where the effects of key physical and geometrical factors are characterized and understood. Some useful suggestions to mitigate its unfavorable influences are given.
URI: http://localhost/handle/Hannan/211473
volume: 64
issue: 9
More Information: 3647,
3653
Appears in Collections:2017

Files in This Item:
File SizeFormat 
8011604.pdf3.08 MBAdobe PDF