Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/207662
Title: Transient Analysis of Through-Silicon Vias in Floating Silicon Substrate
Authors: Wen-Sheng Zhao;Jie Zheng;Shichang Chen;Xiang Wang;Gaofeng Wang
Year: 2017
Publisher: IEEE
Abstract: For through-silicon vias (TSVs) in a floating silicon substrate, electric fields from signal TSVs terminate at ground TSVs instead of the substrate. The MOS capacitance of TSVs in a floating silicon substrate is quite different from that of TSVs in a well-grounded silicon substrate. Therefore, it is essential to perform transient analysis of such TSVs to facilitate designs and applications of 2.5-D and 3-D ICs. This paper presents a systematic study of time-domain responses of TSVs in a floating silicon substrate. Impacts of the floating substrate and the temperature are considered and investigated thoroughly. The equivalent circuit models are developed and applied to predict the signal propagation. The crosstalk voltages among TSVs are accurately captured and compared for different oxide charges and temperatures.
URI: http://localhost/handle/Hannan/207662
volume: 59
issue: 1
More Information: 207,
216
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7524760.pdf1.69 MBAdobe PDF
Title: Transient Analysis of Through-Silicon Vias in Floating Silicon Substrate
Authors: Wen-Sheng Zhao;Jie Zheng;Shichang Chen;Xiang Wang;Gaofeng Wang
Year: 2017
Publisher: IEEE
Abstract: For through-silicon vias (TSVs) in a floating silicon substrate, electric fields from signal TSVs terminate at ground TSVs instead of the substrate. The MOS capacitance of TSVs in a floating silicon substrate is quite different from that of TSVs in a well-grounded silicon substrate. Therefore, it is essential to perform transient analysis of such TSVs to facilitate designs and applications of 2.5-D and 3-D ICs. This paper presents a systematic study of time-domain responses of TSVs in a floating silicon substrate. Impacts of the floating substrate and the temperature are considered and investigated thoroughly. The equivalent circuit models are developed and applied to predict the signal propagation. The crosstalk voltages among TSVs are accurately captured and compared for different oxide charges and temperatures.
URI: http://localhost/handle/Hannan/207662
volume: 59
issue: 1
More Information: 207,
216
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7524760.pdf1.69 MBAdobe PDF
Title: Transient Analysis of Through-Silicon Vias in Floating Silicon Substrate
Authors: Wen-Sheng Zhao;Jie Zheng;Shichang Chen;Xiang Wang;Gaofeng Wang
Year: 2017
Publisher: IEEE
Abstract: For through-silicon vias (TSVs) in a floating silicon substrate, electric fields from signal TSVs terminate at ground TSVs instead of the substrate. The MOS capacitance of TSVs in a floating silicon substrate is quite different from that of TSVs in a well-grounded silicon substrate. Therefore, it is essential to perform transient analysis of such TSVs to facilitate designs and applications of 2.5-D and 3-D ICs. This paper presents a systematic study of time-domain responses of TSVs in a floating silicon substrate. Impacts of the floating substrate and the temperature are considered and investigated thoroughly. The equivalent circuit models are developed and applied to predict the signal propagation. The crosstalk voltages among TSVs are accurately captured and compared for different oxide charges and temperatures.
URI: http://localhost/handle/Hannan/207662
volume: 59
issue: 1
More Information: 207,
216
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7524760.pdf1.69 MBAdobe PDF