Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/199961
Title: Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved {g}_{{m}} and {f}_{\textsf {T}} Linearity
Authors: Weichuan Xing;Zhihong Liu;Haodong Qiu;Geok Ing Ng;Tom&x00E1;s Palacios
Year: 2017
Publisher: IEEE
Abstract: In this letter, we report an InAlN/GaN high electron mobility transistor (HEMT) with a planar nanostrip channel design to improve its transconductance g<sub>m</sub> and cutoff frequency f<sub>T</sub> linearity. The planar nanostrips were formed by partial arsenic ion implantation isolation in the channel under the gate. Devices with a gate length (L<sub>g</sub>) of 80 nm and a source-to-drain distance (L<sub>sd</sub>) of 1 &x03BC;m were fabricated. A conventional device and a device with a fin-like nanowire channel were also fabricated together for comparison. It was observed that the nanostrip and nanowire channel structures can both suppress the access resistance increase at the high output current level, and thereby improve the device's g<sub>m</sub> and f<sub>T</sub> linearity. Compared to the one using etching to form a fin-like nanostrip channel, the GaN HEMT with a planar nanostrip channel has demonstrated reduced parasitic capacitance and improved RF performance.
URI: http://localhost/handle/Hannan/199961
volume: 38
issue: 5
More Information: 619,
622
Appears in Collections:2017

Files in This Item:
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7890468.pdf779 kBAdobe PDF
Title: Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved {g}_{{m}} and {f}_{\textsf {T}} Linearity
Authors: Weichuan Xing;Zhihong Liu;Haodong Qiu;Geok Ing Ng;Tom&x00E1;s Palacios
Year: 2017
Publisher: IEEE
Abstract: In this letter, we report an InAlN/GaN high electron mobility transistor (HEMT) with a planar nanostrip channel design to improve its transconductance g<sub>m</sub> and cutoff frequency f<sub>T</sub> linearity. The planar nanostrips were formed by partial arsenic ion implantation isolation in the channel under the gate. Devices with a gate length (L<sub>g</sub>) of 80 nm and a source-to-drain distance (L<sub>sd</sub>) of 1 &x03BC;m were fabricated. A conventional device and a device with a fin-like nanowire channel were also fabricated together for comparison. It was observed that the nanostrip and nanowire channel structures can both suppress the access resistance increase at the high output current level, and thereby improve the device's g<sub>m</sub> and f<sub>T</sub> linearity. Compared to the one using etching to form a fin-like nanostrip channel, the GaN HEMT with a planar nanostrip channel has demonstrated reduced parasitic capacitance and improved RF performance.
URI: http://localhost/handle/Hannan/199961
volume: 38
issue: 5
More Information: 619,
622
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7890468.pdf779 kBAdobe PDF
Title: Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved {g}_{{m}} and {f}_{\textsf {T}} Linearity
Authors: Weichuan Xing;Zhihong Liu;Haodong Qiu;Geok Ing Ng;Tom&x00E1;s Palacios
Year: 2017
Publisher: IEEE
Abstract: In this letter, we report an InAlN/GaN high electron mobility transistor (HEMT) with a planar nanostrip channel design to improve its transconductance g<sub>m</sub> and cutoff frequency f<sub>T</sub> linearity. The planar nanostrips were formed by partial arsenic ion implantation isolation in the channel under the gate. Devices with a gate length (L<sub>g</sub>) of 80 nm and a source-to-drain distance (L<sub>sd</sub>) of 1 &x03BC;m were fabricated. A conventional device and a device with a fin-like nanowire channel were also fabricated together for comparison. It was observed that the nanostrip and nanowire channel structures can both suppress the access resistance increase at the high output current level, and thereby improve the device's g<sub>m</sub> and f<sub>T</sub> linearity. Compared to the one using etching to form a fin-like nanostrip channel, the GaN HEMT with a planar nanostrip channel has demonstrated reduced parasitic capacitance and improved RF performance.
URI: http://localhost/handle/Hannan/199961
volume: 38
issue: 5
More Information: 619,
622
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7890468.pdf779 kBAdobe PDF