Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/194907
Title: Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing
Authors: Zhongliang Qiao;Xiaohong Tang;Xiang Li;Baoxue Bo;Xin Gao;Yi Qu;Chongyang Liu;Hong Wang
Year: 2017
Publisher: IEEE
Abstract: InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO<sub>2</sub> mask layers on top of the complete InGaAs/GaAs/AlGaAs QW laser structure, emitting at 980 nm wavelength, and followed by a rapid thermal annealing at 880 &x00B0;C for 60 s. The lasing wavelength of the devices fabricated from the intermixed wafer was blue-shifted with the increase of the mask layer thickness. The maximum emission wavelength blue shift of a processed as-cleaved laser reached 112 nm with the output-power more than 1000 mW. By using such an IFVD-QWI technique, multi-wavelength integrated LDs have also been successfully fabricated from a single chip.
URI: http://localhost/handle/Hannan/194907
volume: 5
issue: 2
More Information: 122,
127
Appears in Collections:2017

Files in This Item:
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7849181.pdf1.05 MBAdobe PDF
Title: Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing
Authors: Zhongliang Qiao;Xiaohong Tang;Xiang Li;Baoxue Bo;Xin Gao;Yi Qu;Chongyang Liu;Hong Wang
Year: 2017
Publisher: IEEE
Abstract: InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO<sub>2</sub> mask layers on top of the complete InGaAs/GaAs/AlGaAs QW laser structure, emitting at 980 nm wavelength, and followed by a rapid thermal annealing at 880 &x00B0;C for 60 s. The lasing wavelength of the devices fabricated from the intermixed wafer was blue-shifted with the increase of the mask layer thickness. The maximum emission wavelength blue shift of a processed as-cleaved laser reached 112 nm with the output-power more than 1000 mW. By using such an IFVD-QWI technique, multi-wavelength integrated LDs have also been successfully fabricated from a single chip.
URI: http://localhost/handle/Hannan/194907
volume: 5
issue: 2
More Information: 122,
127
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7849181.pdf1.05 MBAdobe PDF
Title: Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing
Authors: Zhongliang Qiao;Xiaohong Tang;Xiang Li;Baoxue Bo;Xin Gao;Yi Qu;Chongyang Liu;Hong Wang
Year: 2017
Publisher: IEEE
Abstract: InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO<sub>2</sub> mask layers on top of the complete InGaAs/GaAs/AlGaAs QW laser structure, emitting at 980 nm wavelength, and followed by a rapid thermal annealing at 880 &x00B0;C for 60 s. The lasing wavelength of the devices fabricated from the intermixed wafer was blue-shifted with the increase of the mask layer thickness. The maximum emission wavelength blue shift of a processed as-cleaved laser reached 112 nm with the output-power more than 1000 mW. By using such an IFVD-QWI technique, multi-wavelength integrated LDs have also been successfully fabricated from a single chip.
URI: http://localhost/handle/Hannan/194907
volume: 5
issue: 2
More Information: 122,
127
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7849181.pdf1.05 MBAdobe PDF