Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/188703
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dc.contributor.authorLing Lven_US
dc.contributor.authorPeixian Lien_US
dc.contributor.authorXiaohua Maen_US
dc.contributor.authorLinyue Liuen_US
dc.contributor.authorLing Yangen_US
dc.contributor.authorXiaowei Zhouen_US
dc.contributor.authorJincheng Zhangen_US
dc.contributor.authorYanrong Caoen_US
dc.contributor.authorZhen Bien_US
dc.contributor.authorTeng Jiangen_US
dc.contributor.authorQing Zhuen_US
dc.contributor.authorYue Haoen_US
dc.date.accessioned2013en_US
dc.date.accessioned2020-04-06T07:39:00Z-
dc.date.available2020-04-06T07:39:00Z-
dc.date.issued2017en_US
dc.identifier.other10.1109/TNS.2016.2630061en_US
dc.identifier.urihttp://localhost/handle/Hannan/188703-
dc.description.abstractWe studied how irradiation with fast (14 MeV) and thermal (&lt;;0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before and after irradiation. Irradiation with fast neutrons caused the carrier removal effect when the reverse bias was low. Irradiation with thermal neutrons significantly increased the reverse-bias current, possibly because of damage to the passivation layer, defects induced in the GaN, and defects near the metal/GaN interface acting as tunneling sites. However, the forward current decreased both after fast neutron radiation and after thermal neutron radiation. Irradiation with thermal neutrons destroyed the SiO<sub>2</sub> passivation layer. The crystal quality and optical properties of the GaN PIN diodes were characterized by examining changes in the photoluminescence (PL) and micro-Raman scattering spectra. As the fluence of neutrons increased, the yellow luminescence (YL) intensity increased because of the increase in V<sub>Ga</sub>-related defects. Irradiation with fast and thermal neutrons destroyed the lattice integrity and changed the strain state of the devices, which was the main reason for the shift in the E<sub>2</sub><sup>high</sup> phonon mode.en_US
dc.format.extent643,en_US
dc.format.extent647en_US
dc.publisherIEEEen_US
dc.relation.haspart7748520.pdfen_US
dc.titleFast and Thermal Neutron Radiation Effects on GaN PIN Diodesen_US
dc.typeArticleen_US
dc.journal.volume64en_US
dc.journal.issue1en_US
Appears in Collections:2017

Files in This Item:
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7748520.pdf764.42 kBAdobe PDF
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLing Lven_US
dc.contributor.authorPeixian Lien_US
dc.contributor.authorXiaohua Maen_US
dc.contributor.authorLinyue Liuen_US
dc.contributor.authorLing Yangen_US
dc.contributor.authorXiaowei Zhouen_US
dc.contributor.authorJincheng Zhangen_US
dc.contributor.authorYanrong Caoen_US
dc.contributor.authorZhen Bien_US
dc.contributor.authorTeng Jiangen_US
dc.contributor.authorQing Zhuen_US
dc.contributor.authorYue Haoen_US
dc.date.accessioned2013en_US
dc.date.accessioned2020-04-06T07:39:00Z-
dc.date.available2020-04-06T07:39:00Z-
dc.date.issued2017en_US
dc.identifier.other10.1109/TNS.2016.2630061en_US
dc.identifier.urihttp://localhost/handle/Hannan/188703-
dc.description.abstractWe studied how irradiation with fast (14 MeV) and thermal (&lt;;0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before and after irradiation. Irradiation with fast neutrons caused the carrier removal effect when the reverse bias was low. Irradiation with thermal neutrons significantly increased the reverse-bias current, possibly because of damage to the passivation layer, defects induced in the GaN, and defects near the metal/GaN interface acting as tunneling sites. However, the forward current decreased both after fast neutron radiation and after thermal neutron radiation. Irradiation with thermal neutrons destroyed the SiO<sub>2</sub> passivation layer. The crystal quality and optical properties of the GaN PIN diodes were characterized by examining changes in the photoluminescence (PL) and micro-Raman scattering spectra. As the fluence of neutrons increased, the yellow luminescence (YL) intensity increased because of the increase in V<sub>Ga</sub>-related defects. Irradiation with fast and thermal neutrons destroyed the lattice integrity and changed the strain state of the devices, which was the main reason for the shift in the E<sub>2</sub><sup>high</sup> phonon mode.en_US
dc.format.extent643,en_US
dc.format.extent647en_US
dc.publisherIEEEen_US
dc.relation.haspart7748520.pdfen_US
dc.titleFast and Thermal Neutron Radiation Effects on GaN PIN Diodesen_US
dc.typeArticleen_US
dc.journal.volume64en_US
dc.journal.issue1en_US
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7748520.pdf764.42 kBAdobe PDF
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLing Lven_US
dc.contributor.authorPeixian Lien_US
dc.contributor.authorXiaohua Maen_US
dc.contributor.authorLinyue Liuen_US
dc.contributor.authorLing Yangen_US
dc.contributor.authorXiaowei Zhouen_US
dc.contributor.authorJincheng Zhangen_US
dc.contributor.authorYanrong Caoen_US
dc.contributor.authorZhen Bien_US
dc.contributor.authorTeng Jiangen_US
dc.contributor.authorQing Zhuen_US
dc.contributor.authorYue Haoen_US
dc.date.accessioned2013en_US
dc.date.accessioned2020-04-06T07:39:00Z-
dc.date.available2020-04-06T07:39:00Z-
dc.date.issued2017en_US
dc.identifier.other10.1109/TNS.2016.2630061en_US
dc.identifier.urihttp://localhost/handle/Hannan/188703-
dc.description.abstractWe studied how irradiation with fast (14 MeV) and thermal (&lt;;0.4 eV) neutrons affected the properties of GaN PIN diodes, measuring their I-V characteristics before and after irradiation. Irradiation with fast neutrons caused the carrier removal effect when the reverse bias was low. Irradiation with thermal neutrons significantly increased the reverse-bias current, possibly because of damage to the passivation layer, defects induced in the GaN, and defects near the metal/GaN interface acting as tunneling sites. However, the forward current decreased both after fast neutron radiation and after thermal neutron radiation. Irradiation with thermal neutrons destroyed the SiO<sub>2</sub> passivation layer. The crystal quality and optical properties of the GaN PIN diodes were characterized by examining changes in the photoluminescence (PL) and micro-Raman scattering spectra. As the fluence of neutrons increased, the yellow luminescence (YL) intensity increased because of the increase in V<sub>Ga</sub>-related defects. Irradiation with fast and thermal neutrons destroyed the lattice integrity and changed the strain state of the devices, which was the main reason for the shift in the E<sub>2</sub><sup>high</sup> phonon mode.en_US
dc.format.extent643,en_US
dc.format.extent647en_US
dc.publisherIEEEen_US
dc.relation.haspart7748520.pdfen_US
dc.titleFast and Thermal Neutron Radiation Effects on GaN PIN Diodesen_US
dc.typeArticleen_US
dc.journal.volume64en_US
dc.journal.issue1en_US
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7748520.pdf764.42 kBAdobe PDF