Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/168076
Title: Development of a High-Temperature Gate Drive and Protection Circuit Using Discrete Components
Authors: Feng Qi;Longya Xu
Year: 2017
Publisher: IEEE
Abstract: This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon-Carbide (SiC) power mosfets entirely built from commercial off-the-shelf HT discrete components. To estimate cost reduction, a brief comparison was made between the proposed circuit and a commercial circuit using silicon-on-insulator integrated circuits. To evaluate performance, power tests were conducted up to 180&x00B0;C in a thermal chamber. Eventually, the proposed circuit achieved a 90% cost reduction, and all functions were validated by experiments at 180&x00B0;C. This demonstrated that the proposed circuit is a cost-effective solution for contemporary HT applications.
URI: http://localhost/handle/Hannan/168076
volume: 32
issue: 4
More Information: 2957,
2963
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7479501.pdf1.47 MBAdobe PDF
Title: Development of a High-Temperature Gate Drive and Protection Circuit Using Discrete Components
Authors: Feng Qi;Longya Xu
Year: 2017
Publisher: IEEE
Abstract: This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon-Carbide (SiC) power mosfets entirely built from commercial off-the-shelf HT discrete components. To estimate cost reduction, a brief comparison was made between the proposed circuit and a commercial circuit using silicon-on-insulator integrated circuits. To evaluate performance, power tests were conducted up to 180&x00B0;C in a thermal chamber. Eventually, the proposed circuit achieved a 90% cost reduction, and all functions were validated by experiments at 180&x00B0;C. This demonstrated that the proposed circuit is a cost-effective solution for contemporary HT applications.
URI: http://localhost/handle/Hannan/168076
volume: 32
issue: 4
More Information: 2957,
2963
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7479501.pdf1.47 MBAdobe PDF
Title: Development of a High-Temperature Gate Drive and Protection Circuit Using Discrete Components
Authors: Feng Qi;Longya Xu
Year: 2017
Publisher: IEEE
Abstract: This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon-Carbide (SiC) power mosfets entirely built from commercial off-the-shelf HT discrete components. To estimate cost reduction, a brief comparison was made between the proposed circuit and a commercial circuit using silicon-on-insulator integrated circuits. To evaluate performance, power tests were conducted up to 180&x00B0;C in a thermal chamber. Eventually, the proposed circuit achieved a 90% cost reduction, and all functions were validated by experiments at 180&x00B0;C. This demonstrated that the proposed circuit is a cost-effective solution for contemporary HT applications.
URI: http://localhost/handle/Hannan/168076
volume: 32
issue: 4
More Information: 2957,
2963
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7479501.pdf1.47 MBAdobe PDF