Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/152912
Title: Modeling and Characterization of Coaxial Through-Silicon Via With Electrically Floating Inner Silicon
Authors: Wen-Sheng Zhao;Jie Zheng;Jing Wang;Feng Liang;Fei Wen;Linxi Dong;Dingwen Wang;Gaofeng Wang
Year: 2017
Publisher: IEEE
Abstract: In this paper, coaxial through-silicon via (C-TSV) is modeled and studied with the consideration of electrically floating inner silicon substrate. Nonlinear capacitances of the central via and the outer shielding shell are accurately captured by solving cylindrical Poisson equation. By employing symbolically defined device block, the nonlinear capacitances of the C-TSV with electrically floating inner silicon are combined into the equivalent circuit model, and their impacts on the electrical characteristics are examined.
URI: http://localhost/handle/Hannan/152912
volume: 7
issue: 6
More Information: 936,
943
Appears in Collections:2017

Files in This Item:
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7885049.pdf2.35 MBAdobe PDF
Title: Modeling and Characterization of Coaxial Through-Silicon Via With Electrically Floating Inner Silicon
Authors: Wen-Sheng Zhao;Jie Zheng;Jing Wang;Feng Liang;Fei Wen;Linxi Dong;Dingwen Wang;Gaofeng Wang
Year: 2017
Publisher: IEEE
Abstract: In this paper, coaxial through-silicon via (C-TSV) is modeled and studied with the consideration of electrically floating inner silicon substrate. Nonlinear capacitances of the central via and the outer shielding shell are accurately captured by solving cylindrical Poisson equation. By employing symbolically defined device block, the nonlinear capacitances of the C-TSV with electrically floating inner silicon are combined into the equivalent circuit model, and their impacts on the electrical characteristics are examined.
URI: http://localhost/handle/Hannan/152912
volume: 7
issue: 6
More Information: 936,
943
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7885049.pdf2.35 MBAdobe PDF
Title: Modeling and Characterization of Coaxial Through-Silicon Via With Electrically Floating Inner Silicon
Authors: Wen-Sheng Zhao;Jie Zheng;Jing Wang;Feng Liang;Fei Wen;Linxi Dong;Dingwen Wang;Gaofeng Wang
Year: 2017
Publisher: IEEE
Abstract: In this paper, coaxial through-silicon via (C-TSV) is modeled and studied with the consideration of electrically floating inner silicon substrate. Nonlinear capacitances of the central via and the outer shielding shell are accurately captured by solving cylindrical Poisson equation. By employing symbolically defined device block, the nonlinear capacitances of the C-TSV with electrically floating inner silicon are combined into the equivalent circuit model, and their impacts on the electrical characteristics are examined.
URI: http://localhost/handle/Hannan/152912
volume: 7
issue: 6
More Information: 936,
943
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7885049.pdf2.35 MBAdobe PDF