Please use this identifier to cite or link to this item:
http://localhost/handle/Hannan/146239
| Title: | High Input Impedance Cryogenic RF Amplifier for Series Nanowire Detector |
| Authors: | Chao Wan;Zhou Jiang;Lin Kang;Peiheng Wu |
| Year: | 2017 |
| Publisher: | IEEE |
| Abstract: | We designed a high input impedance cryogenic radio frequency amplifier to scale up a series array of superconducting nanowire single photon detectors for resolving a wide range of photon numbers. The monolithic integrated chip was fabricated by Tower Jazz's 0.18-&x03BC;m SiGe BiCMOS process. Temperature dependence of the main components, such as silicon germanium heterojunction bipolar transistor, proportional current source, and poly resistor, were characterized to estimate the quiescent point of the amplifier at cryogenic environment. At 4.2 K, a cryogenic amplifier with 6-k&x03A9; input impedance, 20-dB gain, 4 MHz to 1-GHz bandwidth, and 0.9-mW power dissipation was obtained. |
| URI: | http://localhost/handle/Hannan/146239 |
| volume: | 27 |
| issue: | 4 |
| More Information: | 1, 5 |
| Appears in Collections: | 2017 |
Files in This Item:
| File | Size | Format | |
|---|---|---|---|
| 7870608.pdf | 430.87 kB | Adobe PDF |
| Title: | High Input Impedance Cryogenic RF Amplifier for Series Nanowire Detector |
| Authors: | Chao Wan;Zhou Jiang;Lin Kang;Peiheng Wu |
| Year: | 2017 |
| Publisher: | IEEE |
| Abstract: | We designed a high input impedance cryogenic radio frequency amplifier to scale up a series array of superconducting nanowire single photon detectors for resolving a wide range of photon numbers. The monolithic integrated chip was fabricated by Tower Jazz's 0.18-&x03BC;m SiGe BiCMOS process. Temperature dependence of the main components, such as silicon germanium heterojunction bipolar transistor, proportional current source, and poly resistor, were characterized to estimate the quiescent point of the amplifier at cryogenic environment. At 4.2 K, a cryogenic amplifier with 6-k&x03A9; input impedance, 20-dB gain, 4 MHz to 1-GHz bandwidth, and 0.9-mW power dissipation was obtained. |
| URI: | http://localhost/handle/Hannan/146239 |
| volume: | 27 |
| issue: | 4 |
| More Information: | 1, 5 |
| Appears in Collections: | 2017 |
Files in This Item:
| File | Size | Format | |
|---|---|---|---|
| 7870608.pdf | 430.87 kB | Adobe PDF |
| Title: | High Input Impedance Cryogenic RF Amplifier for Series Nanowire Detector |
| Authors: | Chao Wan;Zhou Jiang;Lin Kang;Peiheng Wu |
| Year: | 2017 |
| Publisher: | IEEE |
| Abstract: | We designed a high input impedance cryogenic radio frequency amplifier to scale up a series array of superconducting nanowire single photon detectors for resolving a wide range of photon numbers. The monolithic integrated chip was fabricated by Tower Jazz's 0.18-&x03BC;m SiGe BiCMOS process. Temperature dependence of the main components, such as silicon germanium heterojunction bipolar transistor, proportional current source, and poly resistor, were characterized to estimate the quiescent point of the amplifier at cryogenic environment. At 4.2 K, a cryogenic amplifier with 6-k&x03A9; input impedance, 20-dB gain, 4 MHz to 1-GHz bandwidth, and 0.9-mW power dissipation was obtained. |
| URI: | http://localhost/handle/Hannan/146239 |
| volume: | 27 |
| issue: | 4 |
| More Information: | 1, 5 |
| Appears in Collections: | 2017 |
Files in This Item:
| File | Size | Format | |
|---|---|---|---|
| 7870608.pdf | 430.87 kB | Adobe PDF |