Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/136663
Full metadata record
DC FieldValueLanguage
dc.contributor.authorJan Wesselen_US
dc.contributor.authorKlaus Schmalzen_US
dc.contributor.authorJ. Christoph Scheytten_US
dc.contributor.authorDietmar Kissingeren_US
dc.date.accessioned2013en_US
dc.date.accessioned2020-04-06T07:05:32Z-
dc.date.available2020-04-06T07:05:32Z-
dc.date.issued2017en_US
dc.identifier.other10.1109/LMWC.2017.2649384en_US
dc.identifier.urihttp://localhost/handle/Hannan/136663-
dc.description.abstractThis work describes an electrical interferometer for contactless permittivity measurements working at 120 GHz. It was fabricated in a 130 nm SiGe process featuring an ft and fmax of 240 and 330 GHz. The on-chip system contains a 120 GHz VCO with a tuning range of 7 GHz featuring a divide-by-64 circuit to enable external PLL operation. The subsequent buffer provides 7 dBm of output power at 120 GHz. Additionally, the IC contains high-precision and high-resolution phase shifters based on a slow-wave transmission line approach with digital control for direct readout ability. A 120 GHz LNA with 17 dB gain and a power detector to provide DC output signals were realized on chip. It enables sample emulation capability by phase shift inducement in the measurement as well as a reference transmission line. In terms of phase detection, the system shows a sensitivity of 907.36 MHz/&x00B0;.en_US
dc.format.extent198,en_US
dc.format.extent200en_US
dc.publisherIEEEen_US
dc.relation.haspart7845690.pdfen_US
dc.titleA 120-GHz Electrical Interferometer for Contactless Permittivity Measurements With Direct Digital Read-Outen_US
dc.typeArticleen_US
dc.journal.volume27en_US
dc.journal.issue2en_US
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7845690.pdf846.19 kBAdobe PDF
Full metadata record
DC FieldValueLanguage
dc.contributor.authorJan Wesselen_US
dc.contributor.authorKlaus Schmalzen_US
dc.contributor.authorJ. Christoph Scheytten_US
dc.contributor.authorDietmar Kissingeren_US
dc.date.accessioned2013en_US
dc.date.accessioned2020-04-06T07:05:32Z-
dc.date.available2020-04-06T07:05:32Z-
dc.date.issued2017en_US
dc.identifier.other10.1109/LMWC.2017.2649384en_US
dc.identifier.urihttp://localhost/handle/Hannan/136663-
dc.description.abstractThis work describes an electrical interferometer for contactless permittivity measurements working at 120 GHz. It was fabricated in a 130 nm SiGe process featuring an ft and fmax of 240 and 330 GHz. The on-chip system contains a 120 GHz VCO with a tuning range of 7 GHz featuring a divide-by-64 circuit to enable external PLL operation. The subsequent buffer provides 7 dBm of output power at 120 GHz. Additionally, the IC contains high-precision and high-resolution phase shifters based on a slow-wave transmission line approach with digital control for direct readout ability. A 120 GHz LNA with 17 dB gain and a power detector to provide DC output signals were realized on chip. It enables sample emulation capability by phase shift inducement in the measurement as well as a reference transmission line. In terms of phase detection, the system shows a sensitivity of 907.36 MHz/&x00B0;.en_US
dc.format.extent198,en_US
dc.format.extent200en_US
dc.publisherIEEEen_US
dc.relation.haspart7845690.pdfen_US
dc.titleA 120-GHz Electrical Interferometer for Contactless Permittivity Measurements With Direct Digital Read-Outen_US
dc.typeArticleen_US
dc.journal.volume27en_US
dc.journal.issue2en_US
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7845690.pdf846.19 kBAdobe PDF
Full metadata record
DC FieldValueLanguage
dc.contributor.authorJan Wesselen_US
dc.contributor.authorKlaus Schmalzen_US
dc.contributor.authorJ. Christoph Scheytten_US
dc.contributor.authorDietmar Kissingeren_US
dc.date.accessioned2013en_US
dc.date.accessioned2020-04-06T07:05:32Z-
dc.date.available2020-04-06T07:05:32Z-
dc.date.issued2017en_US
dc.identifier.other10.1109/LMWC.2017.2649384en_US
dc.identifier.urihttp://localhost/handle/Hannan/136663-
dc.description.abstractThis work describes an electrical interferometer for contactless permittivity measurements working at 120 GHz. It was fabricated in a 130 nm SiGe process featuring an ft and fmax of 240 and 330 GHz. The on-chip system contains a 120 GHz VCO with a tuning range of 7 GHz featuring a divide-by-64 circuit to enable external PLL operation. The subsequent buffer provides 7 dBm of output power at 120 GHz. Additionally, the IC contains high-precision and high-resolution phase shifters based on a slow-wave transmission line approach with digital control for direct readout ability. A 120 GHz LNA with 17 dB gain and a power detector to provide DC output signals were realized on chip. It enables sample emulation capability by phase shift inducement in the measurement as well as a reference transmission line. In terms of phase detection, the system shows a sensitivity of 907.36 MHz/&x00B0;.en_US
dc.format.extent198,en_US
dc.format.extent200en_US
dc.publisherIEEEen_US
dc.relation.haspart7845690.pdfen_US
dc.titleA 120-GHz Electrical Interferometer for Contactless Permittivity Measurements With Direct Digital Read-Outen_US
dc.typeArticleen_US
dc.journal.volume27en_US
dc.journal.issue2en_US
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7845690.pdf846.19 kBAdobe PDF