Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/119460
Title: Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination
Authors: Wentao Yang;Hao Feng;Xiangming Fang;Yong Liu;Yuichi Onozawa;Hiroyuki Tanaka;Johnny K. O. Sin
Year: 2017
Publisher: IEEE
Abstract: In this paper, the design and characterization of the sloped-field-plate enhanced trench edge termination structure are carried out. For achieving the ideal planar junction breakdown voltage and high dV/dt performance, structural parameters, including the depth of the slopedfield-plate and the depth and width of the trench, need to be well designed. Using extensive numerical simulations, the above-mentioned design is accomplished. Experimental results show that for 600 V class devices, a breakdown voltage of 757 V can be achieved by the devices with a trench width larger than 20 &x03BC;m. The breakdown characteristics are verified as the ideal planar junction breakdown by using liquid crystal thermal measurement. Furthermore, the high dV/dt measurement results show that the devices with a trench width larger than 25 &x03BC;m are capable of handling a high dV/dt of 28.9 kV/&x03BC;s even at a bus voltage of 750 V.
URI: http://localhost/handle/Hannan/119460
volume: 64
issue: 3
More Information: 713,
719
Appears in Collections:2017

Files in This Item:
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7790818.pdf2.13 MBAdobe PDF
Title: Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination
Authors: Wentao Yang;Hao Feng;Xiangming Fang;Yong Liu;Yuichi Onozawa;Hiroyuki Tanaka;Johnny K. O. Sin
Year: 2017
Publisher: IEEE
Abstract: In this paper, the design and characterization of the sloped-field-plate enhanced trench edge termination structure are carried out. For achieving the ideal planar junction breakdown voltage and high dV/dt performance, structural parameters, including the depth of the slopedfield-plate and the depth and width of the trench, need to be well designed. Using extensive numerical simulations, the above-mentioned design is accomplished. Experimental results show that for 600 V class devices, a breakdown voltage of 757 V can be achieved by the devices with a trench width larger than 20 &x03BC;m. The breakdown characteristics are verified as the ideal planar junction breakdown by using liquid crystal thermal measurement. Furthermore, the high dV/dt measurement results show that the devices with a trench width larger than 25 &x03BC;m are capable of handling a high dV/dt of 28.9 kV/&x03BC;s even at a bus voltage of 750 V.
URI: http://localhost/handle/Hannan/119460
volume: 64
issue: 3
More Information: 713,
719
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7790818.pdf2.13 MBAdobe PDF
Title: Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination
Authors: Wentao Yang;Hao Feng;Xiangming Fang;Yong Liu;Yuichi Onozawa;Hiroyuki Tanaka;Johnny K. O. Sin
Year: 2017
Publisher: IEEE
Abstract: In this paper, the design and characterization of the sloped-field-plate enhanced trench edge termination structure are carried out. For achieving the ideal planar junction breakdown voltage and high dV/dt performance, structural parameters, including the depth of the slopedfield-plate and the depth and width of the trench, need to be well designed. Using extensive numerical simulations, the above-mentioned design is accomplished. Experimental results show that for 600 V class devices, a breakdown voltage of 757 V can be achieved by the devices with a trench width larger than 20 &x03BC;m. The breakdown characteristics are verified as the ideal planar junction breakdown by using liquid crystal thermal measurement. Furthermore, the high dV/dt measurement results show that the devices with a trench width larger than 25 &x03BC;m are capable of handling a high dV/dt of 28.9 kV/&x03BC;s even at a bus voltage of 750 V.
URI: http://localhost/handle/Hannan/119460
volume: 64
issue: 3
More Information: 713,
719
Appears in Collections:2017

Files in This Item:
File SizeFormat 
7790818.pdf2.13 MBAdobe PDF