مرور بر اساس تاریخ انتشار Zhihong Feng

Showing results 1 to 5 of 5
PreviewIssue DateTitleContributor(s)
7425193.pdf.jpg2016Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETsMing Yang; Zhaojun Lin; Jingtao Zhao; Peng Cui; Chen Fu; Yuanjie Lv; Zhihong Feng
7520683.pdf.jpg2016GaN planar Schottky barrier diode with cut-off frequency of 902 GHzShixiong Liang; Yulong Fang; Dong Xing; Zhirong Zhang; Junlong Wang; Hongyu Guo; Lisen Zhang; Guodong Gu; Zhihong Feng
7509853.pdf.jpg2016High-frequency AlGaN/GaN HFETs with f T/ f max of 149/263 GHz for D-band PA applicationsYuanjie Lv; Xubo Song; Hongyu Guo; Yulong Fang; Zhihong Feng
2017Reliability Assessment of InAlN/GaN HFETs With Lifetime 8.9\times 10^{\mathrm {6}} hYuangang Wang; Yuanjie Lv; Xubo Song; Lei Chi; Jiayun Yin; Xingye Zhou; Yulong Fang; Xin Tan; Hongyu Guo; Hao Peng; Guodong Gu; Zhihong Feng; Shujun Cai
7542547.pdf.jpg2016Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field ScatteringMing Yang; Yuanjie Lv; Zhihong Feng; Wei Lin; Peng Cui; Yan Liu; Chen Fu; Zhaojun Lin
Showing results 1 to 5 of 5