مرور بر اساس تاریخ انتشار Tom&x00E1;s Palacios

Showing results 1 to 9 of 9
PreviewIssue DateTitleContributor(s)
2017Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman ThermometryKevin R. Bagnall; Omair I. Saadat; Sameer Joglekar; Tom&x00E1;s Palacios; Evelyn N. Wang
2017GaN Devices on a 200 mm Si Platform Targeting Heterogeneous IntegrationKo-Tao Lee; Can Bayram; Daniel Piedra; Edmund Sprogis; Hariklia Deligianni; Balakrishnan Krishnan; George Papasouliotis; Ajit Paranjpe; Eyal Aklimi; Ken Shepard; Tom&x00E1;s Palacios; Devendra Sadana
2017GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital ElectronicsNadim Chowdhury; Giuseppe Iannaccone; Gianluca Fiori; Dimitri A. Antoniadis; Tom&x00E1;s Palacios
2017High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn DiodesYuhao Zhang; Daniel Piedra; Min Sun; Jonas Hennig; Armin Dadgar; Lili Yu; Tom&x00E1;s Palacios
2017High-Performance GaN Vertical Fin Power Transistors on Bulk GaN SubstratesMin Sun; Yuhao Zhang; Xiang Gao; Tom&x00E1;s Palacios
2017Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC&x2013;DC Multiphase Buck ConverterEyal Aklimi; Daniel Piedra; Kevin Tien; Tom&x00E1;s Palacios; Kenneth L. Shepard
2017Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist ExposureM. F&x00E1;tima Romero; Alberto Bosc&x00E1;; Jorge Pedr&x00F3;s; Javier Mart&x00ED;nez; Rajveer Fandan; Tom&x00E1;s Palacios; Fernando Calle
2017Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved {g}_{{m}} and {f}_{\textsf {T}} LinearityWeichuan Xing; Zhihong Liu; Haodong Qiu; Geok Ing Ng; Tom&x00E1;s Palacios
2017Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion ImplantationYuhao Zhang; Zhihong Liu; Marko J. Tadjer; Min Sun; Daniel Piedra; Christopher Hatem; Travis J. Anderson; Lunet E. Luna; Anindya Nath; Andrew D. Koehler; Hironori Okumura; Jie Hu; Xu Zhang; Xiang Gao; Boris N. Feigelson; Karl D. Hobart; Tom&x00E1;s Palacios