مرور بر اساس تاریخ انتشار Ling Lv

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PreviewIssue DateTitleContributor(s)
2017Enhanced g<sub>m</sub> and f<sub>T</sub> With High Johnson&x2019;s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact LedgeLing Yang; Minhan Mi; Bin Hou; Hengshuang Zhang; Jiejie Zhu; Qing Zhu; Yang Lu; Meng Zhang; Yunlong He; Lixiang Chen; Xiaowei Zhou; Ling Lv; Xiaohua Ma; Yue Hao
2017Fast and Thermal Neutron Radiation Effects on GaN PIN DiodesLing Lv; Peixian Li; Xiaohua Ma; Linyue Liu; Ling Yang; Xiaowei Zhou; Jincheng Zhang; Yanrong Cao; Zhen Bi; Teng Jiang; Qing Zhu; Yue Hao
2017Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate StructureLing Yang; Minhan Mi; Bin Hou; Jiejie Zhu; Meng Zhang; Yunlong He; Yang Lu; Qing Zhu; Xiaowei Zhou; Ling Lv; Yanrong Cao; Xiaohua Ma; Yue Hao
7484268.pdf.jpg2016An InGaN-Based Solar Cell Including Dual InGaN/GaN Multiple Quantum WellsZhen Bi; Jincheng Zhang; Qiye Zheng; Ling Lv; Zhiyu Lin; Hengsheng Shan; Peixian Li; Xiaohua Ma; Yiping Han; Yue Hao
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