مرور بر اساس تاریخ انتشار Hongwei Gao

Showing results 1 to 4 of 4
PreviewIssue DateTitleContributor(s)
7590090.pdf.jpg2016High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN HeterostructureSen Huang; Xinyu Liu; Xinhua Wang; Xuanwu Kang; Jinhan Zhang; Qilong Bao; Ke Wei; Yingkui Zheng; Chao Zhao; Hongwei Gao; Qian Sun; Zhaofu Zhang; Kevin J. Chen
7748518.pdf.jpg2016High-Power High Beam Quality Narrow-Linewidth Quasicontinuous Wave Microsecond Pulse 1064-nm Nd:YAG AmplifierChuan Guo; Qi Bian; Chang Xu; Junwei Zuo; Yong Bo; Zhimin Wang; Yu Shen; Nan Zong; Hongwei Gao; Yang Liu; Dafu Cui; Qinjun Peng; Zuyan Xu
7373597.pdf.jpg2016Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN x Passivation and High-Temperature Gate RecessYijun Shi; Sen Huang; Qilong Bao; Xinhua Wang; Ke Wei; Haojie Jiang; Junfeng Li; Chao Zhao; Shuiming Li; Yu Zhou; Hongwei Gao; Qian Sun; Hui Yang; Jinhan Zhang; Wanjun Chen; Qi Zhou; Bo Zhang; Xinyu Liu
2017p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching ProcessYu Zhou; Yaozong Zhong; Hongwei Gao; Shujun Dai; Junlei He; Meixin Feng; Yanfei Zhao; Qian Sun; An Dingsun; Hui Yang
Showing results 1 to 4 of 4