مرور بر اساس تاریخ انتشار Geok Ing Ng

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PreviewIssue DateTitleContributor(s)
7429746.pdf.jpg2016A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge EffectsBinit Syamal; Xing Zhou; Siau Ben Chiah; Anand M. Jesudas; Subramaniam Arulkumaran; Geok Ing Ng
2017Planar-Nanostrip-Channel InAlN/GaN HEMTs on Si With Improved {g}_{{m}} and {f}_{\textsf {T}} LinearityWeichuan Xing; Zhihong Liu; Haodong Qiu; Geok Ing Ng; Tom&x00E1;s Palacios
Showing results 1 to 2 of 2