مرور بر اساس تاریخ انتشار Chao Zhao

Showing results 1 to 9 of 9
PreviewIssue DateTitleContributor(s)
7588108.pdf.jpg2016Annealing Effect on Structural, Functional, and Device Properties of Flexible ZnO Acoustic Wave Sensors Based on Commercially Available Al FoilYong Liu; Jing Ting Luo; Chao Zhao; Jian Zhou; Sameer Ahmad Hasan; Yifan Li; Michael Cooke; Qiang Wu; Wai Pang Ng; Jiang Feng Du; Qi Yu; Yang Liu; Yong Qing Fu
2017Development of a Subterahertz Folded-Waveguide Extended Interaction OscillatorWenxin Liu; Zhaochuan Zhang; Chao Zhao; Xin Guo; Zhenxia Zhang; Suying Liao
2017Enhancing the Light-Extraction Efficiency of an AlGaN Nanowire Ultraviolet Light-Emitting Diode by Using Nitride/Air Distributed Bragg Reflector NanogratingsMohd Sharizal Alias; Bilal Janjua; Chao Zhao; Davide Priante; Abdullah A. Alhamoud; Malleswararao Tangi; Lafi M. Alanazi; Abdullah A. Alatawi; Abdulrahman M. Albadri; Ahmed Y. Alyamani; Tien Khee Ng; Boon S. Ooi
7590090.pdf.jpg2016High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN HeterostructureSen Huang; Xinyu Liu; Xinhua Wang; Xuanwu Kang; Jinhan Zhang; Qilong Bao; Ke Wei; Yingkui Zheng; Chao Zhao; Hongwei Gao; Qian Sun; Zhaofu Zhang; Kevin J. Chen
7421986.pdf.jpg2016Impact of the Effective Work Function Gate Metal on the Low-Frequency Noise of Gate-All-Around Silicon-on-Insulator NWFETsWen Fang; Anabela Veloso; Eddy Simoen; Moon-Ju Cho; Nadine Collaert; Aaron Thean; Jun Luo; Chao Zhao; Tianchun Ye; Cor Claeys
2017Negative-Capacitance Characteristics in a Steady-State Ferroelectric Capacitor Made of Parallel DomainsZhengyong Zhu; Huilong Zhu; Sumei Wang; Yongbo Liu; Xiaogen Yin; Kunpeng Jia; Chao Zhao
7373597.pdf.jpg2016Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN x Passivation and High-Temperature Gate RecessYijun Shi; Sen Huang; Qilong Bao; Xinhua Wang; Ke Wei; Haojie Jiang; Junfeng Li; Chao Zhao; Shuiming Li; Yu Zhou; Hongwei Gao; Qian Sun; Hui Yang; Jinhan Zhang; Wanjun Chen; Qi Zhou; Bo Zhang; Xinyu Liu
2017Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETsXiaolei Wang; Jinjuan Xiang; Kai Han; Shengkai Wang; Jun Luo; Chao Zhao; Tianchun Ye; Henry H. Radamson; Eddy Simoen; Wenwu Wang
7579625.pdf.jpg2016Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel GermanidationNingyuan Duan; Jun Luo; Guilei Wang; Jinbiao Liu; Eddy Simoen; Shujuan Mao; Henry Radamson; Xiaolei Wang; Junfeng Li; Wenwu Wang; Chao Zhao; Tianchun Ye
Showing results 1 to 9 of 9