Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/717018
Title: Picosecond-Range Avalanche Switching of Bulk Semiconductors Triggered by Steep High-Voltage Pulses
Other Titles: IEEE Transactions on Plasma Science
Authors: Viktor I. Brylevskiy|Irina A. Smirnova|Natalia I. Podolska|Yulia A. Zharova|Pavel B. Rodin|Igor V. Grekhov
subject: semiconductor lasers|pulse-power system switches|Power electronics
Year: -1-Uns- -1
Abstract: Experimental observation and numerical simulations of sub-nanosecond avalanche switching of Si and ZnSe bulk semiconductor structures initiated by high-voltage pulses with steep (dU / dt > 10 kV/ns) ramp are reported. The measured switching time is ~100ps. The switching is sustainable and repetitive and has negligible jitter. Comparison of the experimental and numerical results suggests that after switching, the whole volume of the structure is uniformly filled with nonequilibrium electron-hole plasma.
URI: http://localhost/handle/Hannan/717018
ISBN: 0093-3813
volume: Volume
issue: Issue
Appears in Collections:New Ieee 2019

Files in This Item:
File Description SizeFormat 
08506403.pdf1.47 MBAdobe PDFThumbnail
Preview File
Title: Picosecond-Range Avalanche Switching of Bulk Semiconductors Triggered by Steep High-Voltage Pulses
Other Titles: IEEE Transactions on Plasma Science
Authors: Viktor I. Brylevskiy|Irina A. Smirnova|Natalia I. Podolska|Yulia A. Zharova|Pavel B. Rodin|Igor V. Grekhov
subject: semiconductor lasers|pulse-power system switches|Power electronics
Year: -1-Uns- -1
Abstract: Experimental observation and numerical simulations of sub-nanosecond avalanche switching of Si and ZnSe bulk semiconductor structures initiated by high-voltage pulses with steep (dU / dt > 10 kV/ns) ramp are reported. The measured switching time is ~100ps. The switching is sustainable and repetitive and has negligible jitter. Comparison of the experimental and numerical results suggests that after switching, the whole volume of the structure is uniformly filled with nonequilibrium electron-hole plasma.
URI: http://localhost/handle/Hannan/717018
ISBN: 0093-3813
volume: Volume
issue: Issue
Appears in Collections:New Ieee 2019

Files in This Item:
File Description SizeFormat 
08506403.pdf1.47 MBAdobe PDFThumbnail
Preview File
Title: Picosecond-Range Avalanche Switching of Bulk Semiconductors Triggered by Steep High-Voltage Pulses
Other Titles: IEEE Transactions on Plasma Science
Authors: Viktor I. Brylevskiy|Irina A. Smirnova|Natalia I. Podolska|Yulia A. Zharova|Pavel B. Rodin|Igor V. Grekhov
subject: semiconductor lasers|pulse-power system switches|Power electronics
Year: -1-Uns- -1
Abstract: Experimental observation and numerical simulations of sub-nanosecond avalanche switching of Si and ZnSe bulk semiconductor structures initiated by high-voltage pulses with steep (dU / dt > 10 kV/ns) ramp are reported. The measured switching time is ~100ps. The switching is sustainable and repetitive and has negligible jitter. Comparison of the experimental and numerical results suggests that after switching, the whole volume of the structure is uniformly filled with nonequilibrium electron-hole plasma.
URI: http://localhost/handle/Hannan/717018
ISBN: 0093-3813
volume: Volume
issue: Issue
Appears in Collections:New Ieee 2019

Files in This Item:
File Description SizeFormat 
08506403.pdf1.47 MBAdobe PDFThumbnail
Preview File