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Title: | Dynamic Switching Characteristics of 1 A Forward Current <inline-formula> <tex-math notation="LaTeX">$\boldsymbol{\beta}$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Rectifiers |
Other Titles: | IEEE Journal of the Electron Devices Society |
Authors: | Jiancheng Yang|Fan Ren|Yen-Ting Chen|Yu-Te Liao|Chin-Wei Chang|Jenshan Lin|Marko J. Tadjer|S. J. Pearton|Akito Kuramata |
subject: | rectifiers|Gallium oxide|Schottky diode |
Year: | -1-Uns- -1 |
Abstract: | An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$7.85 \times 10.3 {\mathrm {cm}}^{2}$ </tex-math></inline-formula> area) and an absolute forward current of 1 A on 8 m thick epitaxial <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> drift layers. The recovery characteristics for these vertical geometry <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of −300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C. |
URI: | http://localhost/handle/Hannan/717000 |
ISBN: | |
volume: | Volume |
issue: | Issue |
Appears in Collections: | New Ieee 2019 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
08502878.pdf | 869.07 kB | Adobe PDF | ![]() Preview File |
Title: | Dynamic Switching Characteristics of 1 A Forward Current <inline-formula> <tex-math notation="LaTeX">$\boldsymbol{\beta}$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Rectifiers |
Other Titles: | IEEE Journal of the Electron Devices Society |
Authors: | Jiancheng Yang|Fan Ren|Yen-Ting Chen|Yu-Te Liao|Chin-Wei Chang|Jenshan Lin|Marko J. Tadjer|S. J. Pearton|Akito Kuramata |
subject: | rectifiers|Gallium oxide|Schottky diode |
Year: | -1-Uns- -1 |
Abstract: | An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$7.85 \times 10.3 {\mathrm {cm}}^{2}$ </tex-math></inline-formula> area) and an absolute forward current of 1 A on 8 m thick epitaxial <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> drift layers. The recovery characteristics for these vertical geometry <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of −300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C. |
URI: | http://localhost/handle/Hannan/717000 |
ISBN: | |
volume: | Volume |
issue: | Issue |
Appears in Collections: | New Ieee 2019 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
08502878.pdf | 869.07 kB | Adobe PDF | ![]() Preview File |
Title: | Dynamic Switching Characteristics of 1 A Forward Current <inline-formula> <tex-math notation="LaTeX">$\boldsymbol{\beta}$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Rectifiers |
Other Titles: | IEEE Journal of the Electron Devices Society |
Authors: | Jiancheng Yang|Fan Ren|Yen-Ting Chen|Yu-Te Liao|Chin-Wei Chang|Jenshan Lin|Marko J. Tadjer|S. J. Pearton|Akito Kuramata |
subject: | rectifiers|Gallium oxide|Schottky diode |
Year: | -1-Uns- -1 |
Abstract: | An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$7.85 \times 10.3 {\mathrm {cm}}^{2}$ </tex-math></inline-formula> area) and an absolute forward current of 1 A on 8 m thick epitaxial <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> drift layers. The recovery characteristics for these vertical geometry <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of −300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C. |
URI: | http://localhost/handle/Hannan/717000 |
ISBN: | |
volume: | Volume |
issue: | Issue |
Appears in Collections: | New Ieee 2019 |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
08502878.pdf | 869.07 kB | Adobe PDF | ![]() Preview File |