Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/717000
Title: Dynamic Switching Characteristics of 1 A Forward Current <inline-formula> <tex-math notation="LaTeX">$\boldsymbol{\beta}$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Rectifiers
Other Titles: IEEE Journal of the Electron Devices Society
Authors: Jiancheng Yang|Fan Ren|Yen-Ting Chen|Yu-Te Liao|Chin-Wei Chang|Jenshan Lin|Marko J. Tadjer|S. J. Pearton|Akito Kuramata
subject: rectifiers|Gallium oxide|Schottky diode
Year: -1-Uns- -1
Abstract: An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$7.85 \times 10.3 {\mathrm {cm}}^{2}$ </tex-math></inline-formula> area) and an absolute forward current of 1 A on 8 m thick epitaxial <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> drift layers. The recovery characteristics for these vertical geometry <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of −300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.
URI: http://localhost/handle/Hannan/717000
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volume: Volume
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Appears in Collections:New Ieee 2019

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Title: Dynamic Switching Characteristics of 1 A Forward Current <inline-formula> <tex-math notation="LaTeX">$\boldsymbol{\beta}$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Rectifiers
Other Titles: IEEE Journal of the Electron Devices Society
Authors: Jiancheng Yang|Fan Ren|Yen-Ting Chen|Yu-Te Liao|Chin-Wei Chang|Jenshan Lin|Marko J. Tadjer|S. J. Pearton|Akito Kuramata
subject: rectifiers|Gallium oxide|Schottky diode
Year: -1-Uns- -1
Abstract: An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$7.85 \times 10.3 {\mathrm {cm}}^{2}$ </tex-math></inline-formula> area) and an absolute forward current of 1 A on 8 m thick epitaxial <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> drift layers. The recovery characteristics for these vertical geometry <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of −300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.
URI: http://localhost/handle/Hannan/717000
ISBN: 
volume: Volume
issue: Issue
Appears in Collections:New Ieee 2019

Files in This Item:
File Description SizeFormat 
08502878.pdf869.07 kBAdobe PDFThumbnail
Preview File
Title: Dynamic Switching Characteristics of 1 A Forward Current <inline-formula> <tex-math notation="LaTeX">$\boldsymbol{\beta}$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Rectifiers
Other Titles: IEEE Journal of the Electron Devices Society
Authors: Jiancheng Yang|Fan Ren|Yen-Ting Chen|Yu-Te Liao|Chin-Wei Chang|Jenshan Lin|Marko J. Tadjer|S. J. Pearton|Akito Kuramata
subject: rectifiers|Gallium oxide|Schottky diode
Year: -1-Uns- -1
Abstract: An inductive load test circuit was used to measure the switching performance of fieldplated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$7.85 \times 10.3 {\mathrm {cm}}^{2}$ </tex-math></inline-formula> area) and an absolute forward current of 1 A on 8 m thick epitaxial <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> drift layers. The recovery characteristics for these vertical geometry <inline-formula xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink > <tex-math notation= LaTeX >$\beta$ </tex-math></inline-formula> -Ga <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >2</sub> O <sub xmlns:mml= http://www.w3.org/1998/Math/MathML xmlns:xlink= http://www.w3.org/1999/xlink >3</sub> Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of −300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 °C.
URI: http://localhost/handle/Hannan/717000
ISBN: 
volume: Volume
issue: Issue
Appears in Collections:New Ieee 2019

Files in This Item:
File Description SizeFormat 
08502878.pdf869.07 kBAdobe PDFThumbnail
Preview File