Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/661384
Title: Two-Level Nested Control Chart for Batch Process in the Semiconductor Manufacturing
Authors: Wenxing Tian;Hailong You;Kai Gu;Chunfu Zhang;Xinzhang Jia
subject: nested variation|batch process|quality control|Process control|two-level nested control chart|statistical process control
Year: 2016
Publisher: IEEE
Abstract: Traditional variables control charts assume that process data is independently identically normally distributed (IIND). Some real-world processes, however, do not obey this convenient assumption. The semiconductor industry is very familiar with non-IIND distributions. The batch processes in the semiconductor manufacturing involve nested variation sources. The variation sources are between-batch variation, the within-batch (or between-wafers) variation in each batch, and the within-wafer variation in each wafer. First, it is proved that the application of traditional mean control chart in the batch process would result in too many false alarms. In addition, some kinds of control charts proposed in previous studies either cannot be used to monitor all the three variation sources or contain too many control charts. In this paper, we propose a new control chart named as two-level nested control chart, composing of four control charts for synthetically monitoring the batch process, which can monitor all the three variation sources. Finally, it was proved by practical application in the process of phosphorus diffusion that this new control chart can be used to monitor all the three variation sources of batch processes.
URI: http://localhost/handle/Hannan/181157
http://localhost/handle/Hannan/661384
ISSN: 0894-6507
1558-2345
volume: 29
issue: 4
Appears in Collections:2016

Files in This Item:
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Title: Two-Level Nested Control Chart for Batch Process in the Semiconductor Manufacturing
Authors: Wenxing Tian;Hailong You;Kai Gu;Chunfu Zhang;Xinzhang Jia
subject: nested variation|batch process|quality control|Process control|two-level nested control chart|statistical process control
Year: 2016
Publisher: IEEE
Abstract: Traditional variables control charts assume that process data is independently identically normally distributed (IIND). Some real-world processes, however, do not obey this convenient assumption. The semiconductor industry is very familiar with non-IIND distributions. The batch processes in the semiconductor manufacturing involve nested variation sources. The variation sources are between-batch variation, the within-batch (or between-wafers) variation in each batch, and the within-wafer variation in each wafer. First, it is proved that the application of traditional mean control chart in the batch process would result in too many false alarms. In addition, some kinds of control charts proposed in previous studies either cannot be used to monitor all the three variation sources or contain too many control charts. In this paper, we propose a new control chart named as two-level nested control chart, composing of four control charts for synthetically monitoring the batch process, which can monitor all the three variation sources. Finally, it was proved by practical application in the process of phosphorus diffusion that this new control chart can be used to monitor all the three variation sources of batch processes.
URI: http://localhost/handle/Hannan/181157
http://localhost/handle/Hannan/661384
ISSN: 0894-6507
1558-2345
volume: 29
issue: 4
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7555353.pdf1.87 MBAdobe PDFThumbnail
Preview File
Title: Two-Level Nested Control Chart for Batch Process in the Semiconductor Manufacturing
Authors: Wenxing Tian;Hailong You;Kai Gu;Chunfu Zhang;Xinzhang Jia
subject: nested variation|batch process|quality control|Process control|two-level nested control chart|statistical process control
Year: 2016
Publisher: IEEE
Abstract: Traditional variables control charts assume that process data is independently identically normally distributed (IIND). Some real-world processes, however, do not obey this convenient assumption. The semiconductor industry is very familiar with non-IIND distributions. The batch processes in the semiconductor manufacturing involve nested variation sources. The variation sources are between-batch variation, the within-batch (or between-wafers) variation in each batch, and the within-wafer variation in each wafer. First, it is proved that the application of traditional mean control chart in the batch process would result in too many false alarms. In addition, some kinds of control charts proposed in previous studies either cannot be used to monitor all the three variation sources or contain too many control charts. In this paper, we propose a new control chart named as two-level nested control chart, composing of four control charts for synthetically monitoring the batch process, which can monitor all the three variation sources. Finally, it was proved by practical application in the process of phosphorus diffusion that this new control chart can be used to monitor all the three variation sources of batch processes.
URI: http://localhost/handle/Hannan/181157
http://localhost/handle/Hannan/661384
ISSN: 0894-6507
1558-2345
volume: 29
issue: 4
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7555353.pdf1.87 MBAdobe PDFThumbnail
Preview File