Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/658480
Title: Effectiveness of p + Layer in Mitigating Substrate Noise Induced by Through-Silicon Via for Microwave Applications
Authors: Xiangkun Yin;Zhangming Zhu;Yintang Yang;Ruixue Ding
subject: three-dimensional integrated circuit|$p +$ layer|substrate noise|through-silicon via (TSV)|Microwave application
Year: 2016
Publisher: IEEE
Abstract: We characterize quantitatively the noise-shielding effect of the p+ layer surrounding through-silicon via (TSV). In time domain, as for the rise time of input signal in picosecond scale, 1) the peak noise induced by TSV with p+ layer at the observe point (OP) is reduced by more than 91.8% compared with that of conventional TSV; 2) for the case without p+ layer, the threshold voltage and saturation current of nMOSFET are changed by as much as 80 mV and 120% due to the TSV-induced noise, respectively; while for the case with p+ layer, there are hardly any disturbance. In frequency domain, the transmission parameter from TSV to OP is decreased by 21~43 dB in the frequency range of 0.1 to 50 GHz, after the p+ layer is added. It is proved that the p+ layer can mitigate the TSV-induced substrate noise effectively for microwave applications.
URI: http://localhost/handle/Hannan/170236
http://localhost/handle/Hannan/658480
ISSN: 1531-1309
1558-1764
volume: 26
issue: 9
Appears in Collections:2016

Files in This Item:
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7549101.pdf1.24 MBAdobe PDFThumbnail
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Title: Effectiveness of p + Layer in Mitigating Substrate Noise Induced by Through-Silicon Via for Microwave Applications
Authors: Xiangkun Yin;Zhangming Zhu;Yintang Yang;Ruixue Ding
subject: three-dimensional integrated circuit|$p +$ layer|substrate noise|through-silicon via (TSV)|Microwave application
Year: 2016
Publisher: IEEE
Abstract: We characterize quantitatively the noise-shielding effect of the p+ layer surrounding through-silicon via (TSV). In time domain, as for the rise time of input signal in picosecond scale, 1) the peak noise induced by TSV with p+ layer at the observe point (OP) is reduced by more than 91.8% compared with that of conventional TSV; 2) for the case without p+ layer, the threshold voltage and saturation current of nMOSFET are changed by as much as 80 mV and 120% due to the TSV-induced noise, respectively; while for the case with p+ layer, there are hardly any disturbance. In frequency domain, the transmission parameter from TSV to OP is decreased by 21~43 dB in the frequency range of 0.1 to 50 GHz, after the p+ layer is added. It is proved that the p+ layer can mitigate the TSV-induced substrate noise effectively for microwave applications.
URI: http://localhost/handle/Hannan/170236
http://localhost/handle/Hannan/658480
ISSN: 1531-1309
1558-1764
volume: 26
issue: 9
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7549101.pdf1.24 MBAdobe PDFThumbnail
Preview File
Title: Effectiveness of p + Layer in Mitigating Substrate Noise Induced by Through-Silicon Via for Microwave Applications
Authors: Xiangkun Yin;Zhangming Zhu;Yintang Yang;Ruixue Ding
subject: three-dimensional integrated circuit|$p +$ layer|substrate noise|through-silicon via (TSV)|Microwave application
Year: 2016
Publisher: IEEE
Abstract: We characterize quantitatively the noise-shielding effect of the p+ layer surrounding through-silicon via (TSV). In time domain, as for the rise time of input signal in picosecond scale, 1) the peak noise induced by TSV with p+ layer at the observe point (OP) is reduced by more than 91.8% compared with that of conventional TSV; 2) for the case without p+ layer, the threshold voltage and saturation current of nMOSFET are changed by as much as 80 mV and 120% due to the TSV-induced noise, respectively; while for the case with p+ layer, there are hardly any disturbance. In frequency domain, the transmission parameter from TSV to OP is decreased by 21~43 dB in the frequency range of 0.1 to 50 GHz, after the p+ layer is added. It is proved that the p+ layer can mitigate the TSV-induced substrate noise effectively for microwave applications.
URI: http://localhost/handle/Hannan/170236
http://localhost/handle/Hannan/658480
ISSN: 1531-1309
1558-1764
volume: 26
issue: 9
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7549101.pdf1.24 MBAdobe PDFThumbnail
Preview File