Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/653555
Title: Low-Loss Air-Cavity Through-Silicon Vias (TSVs) for High Speed Three-Dimensional Integrated Circuits (3-D ICs)
Authors: Xiaoxian Liu;Zhangming Zhu;Yintang Yang;Ruixue Ding
subject: low loss air-cavity through-silicon vias (TSVs)|Equivalent-circuit model|high speed three-dimensional integrated circuits (3-D ICs)
Year: 2016
Publisher: IEEE
Abstract: Since the coupling loss of conventional low resistivity silicon (LRSi) is considerable in high speed three-dimensional integrated circuits (3-D 'Cs), air-cavity through-silicon vias (TSVs) on LRSi are proposed in this letter to reduce the conductive substrate losses for microwave applications. The Q-factor and insertion loss are exploited to assess the effect of air-cavity TSVs. The accurate wideband equivalent circuit model and simplified π-model are derived based on the physical design parameters, which are established by the ADS software. Well agreements between the proposed models and 3-D full-wave EM field simulation of Ansoft's HFSS are shown with the operating frequencies up to 20 GHz.
URI: http://localhost/handle/Hannan/139371
http://localhost/handle/Hannan/653555
ISSN: 1531-1309
1558-1764
volume: 26
issue: 2
Appears in Collections:2016

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Title: Low-Loss Air-Cavity Through-Silicon Vias (TSVs) for High Speed Three-Dimensional Integrated Circuits (3-D ICs)
Authors: Xiaoxian Liu;Zhangming Zhu;Yintang Yang;Ruixue Ding
subject: low loss air-cavity through-silicon vias (TSVs)|Equivalent-circuit model|high speed three-dimensional integrated circuits (3-D ICs)
Year: 2016
Publisher: IEEE
Abstract: Since the coupling loss of conventional low resistivity silicon (LRSi) is considerable in high speed three-dimensional integrated circuits (3-D 'Cs), air-cavity through-silicon vias (TSVs) on LRSi are proposed in this letter to reduce the conductive substrate losses for microwave applications. The Q-factor and insertion loss are exploited to assess the effect of air-cavity TSVs. The accurate wideband equivalent circuit model and simplified π-model are derived based on the physical design parameters, which are established by the ADS software. Well agreements between the proposed models and 3-D full-wave EM field simulation of Ansoft's HFSS are shown with the operating frequencies up to 20 GHz.
URI: http://localhost/handle/Hannan/139371
http://localhost/handle/Hannan/653555
ISSN: 1531-1309
1558-1764
volume: 26
issue: 2
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7394132.pdf560.59 kBAdobe PDFThumbnail
Preview File
Title: Low-Loss Air-Cavity Through-Silicon Vias (TSVs) for High Speed Three-Dimensional Integrated Circuits (3-D ICs)
Authors: Xiaoxian Liu;Zhangming Zhu;Yintang Yang;Ruixue Ding
subject: low loss air-cavity through-silicon vias (TSVs)|Equivalent-circuit model|high speed three-dimensional integrated circuits (3-D ICs)
Year: 2016
Publisher: IEEE
Abstract: Since the coupling loss of conventional low resistivity silicon (LRSi) is considerable in high speed three-dimensional integrated circuits (3-D 'Cs), air-cavity through-silicon vias (TSVs) on LRSi are proposed in this letter to reduce the conductive substrate losses for microwave applications. The Q-factor and insertion loss are exploited to assess the effect of air-cavity TSVs. The accurate wideband equivalent circuit model and simplified π-model are derived based on the physical design parameters, which are established by the ADS software. Well agreements between the proposed models and 3-D full-wave EM field simulation of Ansoft's HFSS are shown with the operating frequencies up to 20 GHz.
URI: http://localhost/handle/Hannan/139371
http://localhost/handle/Hannan/653555
ISSN: 1531-1309
1558-1764
volume: 26
issue: 2
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7394132.pdf560.59 kBAdobe PDFThumbnail
Preview File