Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/651795
Title: GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing
Authors: Genquan Han;Yibo Wang;Yan Liu;Chunfu Zhang;Qian Feng;Mingshan Liu;Shenglei Zhao;Buwen Cheng;Jincheng Zhang;Yue Hao
subject: Subthreshold Swing|Germanium-Tin (GeSn)|Tunneling FET
Year: 2016
Publisher: IEEE
Abstract: Ultrathin GeSn channels were epitaxially grown on Si(111) and (001) substrates using solid source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and pMOSFETs were fabricated on Si. GeSn QW pMOSFETs on Si(111) demonstrate a high effective hole mobility of 505 cm2 /Vs, indicating the high crystallinity of the GeSn material. GeSn QW pTFETs on Si(111) outperform the devices on Si(001) on subthreshold swing (SS) and ON-state current I<sub>ON</sub>. (111)-oriented GeSn pTFET with a 4-nm-thick channel achieves a steep SS of ~60 mV/decade and a high ON-state/OFF-state current ratio of 107 , which are superior to those of the other reported non-Si pTFETs with a small bandgap.
URI: http://localhost/handle/Hannan/136230
http://localhost/handle/Hannan/651795
ISSN: 0741-3106
1558-0563
volume: 37
issue: 6
Appears in Collections:2016

Files in This Item:
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Title: GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing
Authors: Genquan Han;Yibo Wang;Yan Liu;Chunfu Zhang;Qian Feng;Mingshan Liu;Shenglei Zhao;Buwen Cheng;Jincheng Zhang;Yue Hao
subject: Subthreshold Swing|Germanium-Tin (GeSn)|Tunneling FET
Year: 2016
Publisher: IEEE
Abstract: Ultrathin GeSn channels were epitaxially grown on Si(111) and (001) substrates using solid source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and pMOSFETs were fabricated on Si. GeSn QW pMOSFETs on Si(111) demonstrate a high effective hole mobility of 505 cm2 /Vs, indicating the high crystallinity of the GeSn material. GeSn QW pTFETs on Si(111) outperform the devices on Si(001) on subthreshold swing (SS) and ON-state current I<sub>ON</sub>. (111)-oriented GeSn pTFET with a 4-nm-thick channel achieves a steep SS of ~60 mV/decade and a high ON-state/OFF-state current ratio of 107 , which are superior to those of the other reported non-Si pTFETs with a small bandgap.
URI: http://localhost/handle/Hannan/136230
http://localhost/handle/Hannan/651795
ISSN: 0741-3106
1558-0563
volume: 37
issue: 6
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7460184.pdf1.37 MBAdobe PDFThumbnail
Preview File
Title: GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing
Authors: Genquan Han;Yibo Wang;Yan Liu;Chunfu Zhang;Qian Feng;Mingshan Liu;Shenglei Zhao;Buwen Cheng;Jincheng Zhang;Yue Hao
subject: Subthreshold Swing|Germanium-Tin (GeSn)|Tunneling FET
Year: 2016
Publisher: IEEE
Abstract: Ultrathin GeSn channels were epitaxially grown on Si(111) and (001) substrates using solid source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and pMOSFETs were fabricated on Si. GeSn QW pMOSFETs on Si(111) demonstrate a high effective hole mobility of 505 cm2 /Vs, indicating the high crystallinity of the GeSn material. GeSn QW pTFETs on Si(111) outperform the devices on Si(001) on subthreshold swing (SS) and ON-state current I<sub>ON</sub>. (111)-oriented GeSn pTFET with a 4-nm-thick channel achieves a steep SS of ~60 mV/decade and a high ON-state/OFF-state current ratio of 107 , which are superior to those of the other reported non-Si pTFETs with a small bandgap.
URI: http://localhost/handle/Hannan/136230
http://localhost/handle/Hannan/651795
ISSN: 0741-3106
1558-0563
volume: 37
issue: 6
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7460184.pdf1.37 MBAdobe PDFThumbnail
Preview File