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dc.contributor.authorJuan Hongen_US
dc.contributor.authorQidong Gengen_US
dc.contributor.authorRongwei Xuanen_US
dc.contributor.authorHaibing Huangen_US
dc.contributor.authorWei Wangen_US
dc.date.accessioned2020-05-20T10:16:44Z-
dc.date.available2020-05-20T10:16:44Z-
dc.date.issued2016en_US
dc.identifier.issn2156-3381en_US
dc.identifier.issn2156-3403en_US
dc.identifier.other10.1109/JPHOTOV.2016.2571630en_US
dc.identifier.urihttp://localhost/handle/Hannan/138460en_US
dc.identifier.urihttp://localhost/handle/Hannan/651643-
dc.description.abstractIn this study, silicon (Si) paste formed by 25-wt% p-type Si nanoparticles and 75-wt% organic solvent is used as a boron (B) source. After conducting a laser opening in the back surface, the preprocessed Si wafers are used as the substrate. The Si paste is then screen-printed above the openings. Finally, B atoms diffuse into Si wafers after being cofired with aluminum paste. The voids in rear local contacts are located by scanning acoustic microscopy. The successful B doping is demonstrated by secondary ion mass spectroscopy. Cells with an average efficiency of over 20% are fabricated on China sunergy's production line, especially with a 0.7% improvement of the fill factor values for passivated emitter and rear contact cells.en_US
dc.publisherIEEEen_US
dc.relation.haspart7485834.pdfen_US
dc.subjectBoron doping|Si paste|screen-printeden_US
dc.titleHigh-Efficiency Silicon Solar Cells With Boron Doping in the Back Surface Field via Silicon Pasteen_US
dc.typeArticleen_US
dc.journal.volume6en_US
dc.journal.issue5en_US
dc.journal.titleIEEE Journal of Photovoltaicsen_US
Appears in Collections:2016

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Full metadata record
DC FieldValueLanguage
dc.contributor.authorJuan Hongen_US
dc.contributor.authorQidong Gengen_US
dc.contributor.authorRongwei Xuanen_US
dc.contributor.authorHaibing Huangen_US
dc.contributor.authorWei Wangen_US
dc.date.accessioned2020-05-20T10:16:44Z-
dc.date.available2020-05-20T10:16:44Z-
dc.date.issued2016en_US
dc.identifier.issn2156-3381en_US
dc.identifier.issn2156-3403en_US
dc.identifier.other10.1109/JPHOTOV.2016.2571630en_US
dc.identifier.urihttp://localhost/handle/Hannan/138460en_US
dc.identifier.urihttp://localhost/handle/Hannan/651643-
dc.description.abstractIn this study, silicon (Si) paste formed by 25-wt% p-type Si nanoparticles and 75-wt% organic solvent is used as a boron (B) source. After conducting a laser opening in the back surface, the preprocessed Si wafers are used as the substrate. The Si paste is then screen-printed above the openings. Finally, B atoms diffuse into Si wafers after being cofired with aluminum paste. The voids in rear local contacts are located by scanning acoustic microscopy. The successful B doping is demonstrated by secondary ion mass spectroscopy. Cells with an average efficiency of over 20% are fabricated on China sunergy's production line, especially with a 0.7% improvement of the fill factor values for passivated emitter and rear contact cells.en_US
dc.publisherIEEEen_US
dc.relation.haspart7485834.pdfen_US
dc.subjectBoron doping|Si paste|screen-printeden_US
dc.titleHigh-Efficiency Silicon Solar Cells With Boron Doping in the Back Surface Field via Silicon Pasteen_US
dc.typeArticleen_US
dc.journal.volume6en_US
dc.journal.issue5en_US
dc.journal.titleIEEE Journal of Photovoltaicsen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7485834.pdf879.98 kBAdobe PDFThumbnail
Preview File
Full metadata record
DC FieldValueLanguage
dc.contributor.authorJuan Hongen_US
dc.contributor.authorQidong Gengen_US
dc.contributor.authorRongwei Xuanen_US
dc.contributor.authorHaibing Huangen_US
dc.contributor.authorWei Wangen_US
dc.date.accessioned2020-05-20T10:16:44Z-
dc.date.available2020-05-20T10:16:44Z-
dc.date.issued2016en_US
dc.identifier.issn2156-3381en_US
dc.identifier.issn2156-3403en_US
dc.identifier.other10.1109/JPHOTOV.2016.2571630en_US
dc.identifier.urihttp://localhost/handle/Hannan/138460en_US
dc.identifier.urihttp://localhost/handle/Hannan/651643-
dc.description.abstractIn this study, silicon (Si) paste formed by 25-wt% p-type Si nanoparticles and 75-wt% organic solvent is used as a boron (B) source. After conducting a laser opening in the back surface, the preprocessed Si wafers are used as the substrate. The Si paste is then screen-printed above the openings. Finally, B atoms diffuse into Si wafers after being cofired with aluminum paste. The voids in rear local contacts are located by scanning acoustic microscopy. The successful B doping is demonstrated by secondary ion mass spectroscopy. Cells with an average efficiency of over 20% are fabricated on China sunergy's production line, especially with a 0.7% improvement of the fill factor values for passivated emitter and rear contact cells.en_US
dc.publisherIEEEen_US
dc.relation.haspart7485834.pdfen_US
dc.subjectBoron doping|Si paste|screen-printeden_US
dc.titleHigh-Efficiency Silicon Solar Cells With Boron Doping in the Back Surface Field via Silicon Pasteen_US
dc.typeArticleen_US
dc.journal.volume6en_US
dc.journal.issue5en_US
dc.journal.titleIEEE Journal of Photovoltaicsen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7485834.pdf879.98 kBAdobe PDFThumbnail
Preview File