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عنوان: High-Efficiency Silicon Solar Cells With Boron Doping in the Back Surface Field via Silicon Paste
پدیدآورنده: Juan Hong;Qidong Geng;Rongwei Xuan;Haibing Huang;Wei Wang
کلید واژه ها: Boron doping|Si paste|screen-printed
تاریخ انتشار: 2016
ناشر: IEEE
چکیده: In this study, silicon (Si) paste formed by 25-wt% p-type Si nanoparticles and 75-wt% organic solvent is used as a boron (B) source. After conducting a laser opening in the back surface, the preprocessed Si wafers are used as the substrate. The Si paste is then screen-printed above the openings. Finally, B atoms diffuse into Si wafers after being cofired with aluminum paste. The voids in rear local contacts are located by scanning acoustic microscopy. The successful B doping is demonstrated by secondary ion mass spectroscopy. Cells with an average efficiency of over 20% are fabricated on China sunergy's production line, especially with a 0.7% improvement of the fill factor values for passivated emitter and rear contact cells.
آدرس: http://localhost/handle/Hannan/138460
http://localhost/handle/Hannan/651643
ISSN: 2156-3381
2156-3403
دوره: 6
شماره: 5
مجموعه(های):2016

پیوست های این کاربرگه
فایل توضیحات اندازهفرمت  
7485834.pdf879.98 kBAdobe PDFتصویر
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عنوان: High-Efficiency Silicon Solar Cells With Boron Doping in the Back Surface Field via Silicon Paste
پدیدآورنده: Juan Hong;Qidong Geng;Rongwei Xuan;Haibing Huang;Wei Wang
کلید واژه ها: Boron doping|Si paste|screen-printed
تاریخ انتشار: 2016
ناشر: IEEE
چکیده: In this study, silicon (Si) paste formed by 25-wt% p-type Si nanoparticles and 75-wt% organic solvent is used as a boron (B) source. After conducting a laser opening in the back surface, the preprocessed Si wafers are used as the substrate. The Si paste is then screen-printed above the openings. Finally, B atoms diffuse into Si wafers after being cofired with aluminum paste. The voids in rear local contacts are located by scanning acoustic microscopy. The successful B doping is demonstrated by secondary ion mass spectroscopy. Cells with an average efficiency of over 20% are fabricated on China sunergy's production line, especially with a 0.7% improvement of the fill factor values for passivated emitter and rear contact cells.
آدرس: http://localhost/handle/Hannan/138460
http://localhost/handle/Hannan/651643
ISSN: 2156-3381
2156-3403
دوره: 6
شماره: 5
مجموعه(های):2016

پیوست های این کاربرگه
فایل توضیحات اندازهفرمت  
7485834.pdf879.98 kBAdobe PDFتصویر
مشاهده فایل
عنوان: High-Efficiency Silicon Solar Cells With Boron Doping in the Back Surface Field via Silicon Paste
پدیدآورنده: Juan Hong;Qidong Geng;Rongwei Xuan;Haibing Huang;Wei Wang
کلید واژه ها: Boron doping|Si paste|screen-printed
تاریخ انتشار: 2016
ناشر: IEEE
چکیده: In this study, silicon (Si) paste formed by 25-wt% p-type Si nanoparticles and 75-wt% organic solvent is used as a boron (B) source. After conducting a laser opening in the back surface, the preprocessed Si wafers are used as the substrate. The Si paste is then screen-printed above the openings. Finally, B atoms diffuse into Si wafers after being cofired with aluminum paste. The voids in rear local contacts are located by scanning acoustic microscopy. The successful B doping is demonstrated by secondary ion mass spectroscopy. Cells with an average efficiency of over 20% are fabricated on China sunergy's production line, especially with a 0.7% improvement of the fill factor values for passivated emitter and rear contact cells.
آدرس: http://localhost/handle/Hannan/138460
http://localhost/handle/Hannan/651643
ISSN: 2156-3381
2156-3403
دوره: 6
شماره: 5
مجموعه(های):2016

پیوست های این کاربرگه
فایل توضیحات اندازهفرمت  
7485834.pdf879.98 kBAdobe PDFتصویر
مشاهده فایل