Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/651643
Title: High-Efficiency Silicon Solar Cells With Boron Doping in the Back Surface Field via Silicon Paste
Authors: Juan Hong;Qidong Geng;Rongwei Xuan;Haibing Huang;Wei Wang
subject: Boron doping|Si paste|screen-printed
Year: 2016
Publisher: IEEE
Abstract: In this study, silicon (Si) paste formed by 25-wt% p-type Si nanoparticles and 75-wt% organic solvent is used as a boron (B) source. After conducting a laser opening in the back surface, the preprocessed Si wafers are used as the substrate. The Si paste is then screen-printed above the openings. Finally, B atoms diffuse into Si wafers after being cofired with aluminum paste. The voids in rear local contacts are located by scanning acoustic microscopy. The successful B doping is demonstrated by secondary ion mass spectroscopy. Cells with an average efficiency of over 20% are fabricated on China sunergy's production line, especially with a 0.7% improvement of the fill factor values for passivated emitter and rear contact cells.
URI: http://localhost/handle/Hannan/138460
http://localhost/handle/Hannan/651643
ISSN: 2156-3381
2156-3403
volume: 6
issue: 5
Appears in Collections:2016

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Title: High-Efficiency Silicon Solar Cells With Boron Doping in the Back Surface Field via Silicon Paste
Authors: Juan Hong;Qidong Geng;Rongwei Xuan;Haibing Huang;Wei Wang
subject: Boron doping|Si paste|screen-printed
Year: 2016
Publisher: IEEE
Abstract: In this study, silicon (Si) paste formed by 25-wt% p-type Si nanoparticles and 75-wt% organic solvent is used as a boron (B) source. After conducting a laser opening in the back surface, the preprocessed Si wafers are used as the substrate. The Si paste is then screen-printed above the openings. Finally, B atoms diffuse into Si wafers after being cofired with aluminum paste. The voids in rear local contacts are located by scanning acoustic microscopy. The successful B doping is demonstrated by secondary ion mass spectroscopy. Cells with an average efficiency of over 20% are fabricated on China sunergy's production line, especially with a 0.7% improvement of the fill factor values for passivated emitter and rear contact cells.
URI: http://localhost/handle/Hannan/138460
http://localhost/handle/Hannan/651643
ISSN: 2156-3381
2156-3403
volume: 6
issue: 5
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7485834.pdf879.98 kBAdobe PDFThumbnail
Preview File
Title: High-Efficiency Silicon Solar Cells With Boron Doping in the Back Surface Field via Silicon Paste
Authors: Juan Hong;Qidong Geng;Rongwei Xuan;Haibing Huang;Wei Wang
subject: Boron doping|Si paste|screen-printed
Year: 2016
Publisher: IEEE
Abstract: In this study, silicon (Si) paste formed by 25-wt% p-type Si nanoparticles and 75-wt% organic solvent is used as a boron (B) source. After conducting a laser opening in the back surface, the preprocessed Si wafers are used as the substrate. The Si paste is then screen-printed above the openings. Finally, B atoms diffuse into Si wafers after being cofired with aluminum paste. The voids in rear local contacts are located by scanning acoustic microscopy. The successful B doping is demonstrated by secondary ion mass spectroscopy. Cells with an average efficiency of over 20% are fabricated on China sunergy's production line, especially with a 0.7% improvement of the fill factor values for passivated emitter and rear contact cells.
URI: http://localhost/handle/Hannan/138460
http://localhost/handle/Hannan/651643
ISSN: 2156-3381
2156-3403
volume: 6
issue: 5
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7485834.pdf879.98 kBAdobe PDFThumbnail
Preview File