Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/649206
Title: High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing
Authors: William Hsu;Xiaoru Wang;Feng Wen;Yun Wang;Andrei Dolocan;Taegon Kim;Emanuel Tutuc;Sanjay K. Banerjee
subject: Ge|Phosphorus|dopant activation|n+/p junction|dopant deactivation|laser spike annealing
Year: 2016
Publisher: IEEE
Abstract: Germanium n+ /p junctions with high phosphorus dopant activation (>1020 cm-3 ) and minimal dopant diffusion were achieved by P implantation and laser spike annealing (LSA) at temperatures ≥794 °C for 400 μs. In addition, there is no evidence of any residual extended defectivity near the junction after LSA. The effect of F co-doping was also investigated, demonstrating the reduction in both diffusion and activation. The thermal stability and electrical characteristics of Ge n+ /p junction activated by LSA were evaluated.
URI: http://localhost/handle/Hannan/138254
http://localhost/handle/Hannan/649206
ISSN: 0741-3106
1558-0563
volume: 37
issue: 9
Appears in Collections:2016

Files in This Item:
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Title: High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing
Authors: William Hsu;Xiaoru Wang;Feng Wen;Yun Wang;Andrei Dolocan;Taegon Kim;Emanuel Tutuc;Sanjay K. Banerjee
subject: Ge|Phosphorus|dopant activation|n+/p junction|dopant deactivation|laser spike annealing
Year: 2016
Publisher: IEEE
Abstract: Germanium n+ /p junctions with high phosphorus dopant activation (>1020 cm-3 ) and minimal dopant diffusion were achieved by P implantation and laser spike annealing (LSA) at temperatures ≥794 °C for 400 μs. In addition, there is no evidence of any residual extended defectivity near the junction after LSA. The effect of F co-doping was also investigated, demonstrating the reduction in both diffusion and activation. The thermal stability and electrical characteristics of Ge n+ /p junction activated by LSA were evaluated.
URI: http://localhost/handle/Hannan/138254
http://localhost/handle/Hannan/649206
ISSN: 0741-3106
1558-0563
volume: 37
issue: 9
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7505908.pdf1.03 MBAdobe PDFThumbnail
Preview File
Title: High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing
Authors: William Hsu;Xiaoru Wang;Feng Wen;Yun Wang;Andrei Dolocan;Taegon Kim;Emanuel Tutuc;Sanjay K. Banerjee
subject: Ge|Phosphorus|dopant activation|n+/p junction|dopant deactivation|laser spike annealing
Year: 2016
Publisher: IEEE
Abstract: Germanium n+ /p junctions with high phosphorus dopant activation (>1020 cm-3 ) and minimal dopant diffusion were achieved by P implantation and laser spike annealing (LSA) at temperatures ≥794 °C for 400 μs. In addition, there is no evidence of any residual extended defectivity near the junction after LSA. The effect of F co-doping was also investigated, demonstrating the reduction in both diffusion and activation. The thermal stability and electrical characteristics of Ge n+ /p junction activated by LSA were evaluated.
URI: http://localhost/handle/Hannan/138254
http://localhost/handle/Hannan/649206
ISSN: 0741-3106
1558-0563
volume: 37
issue: 9
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7505908.pdf1.03 MBAdobe PDFThumbnail
Preview File