Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/647716
Title: Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET
Authors: Hongjuan Wang;Genquan Han;Yan Liu;Shengdong Hu;Chunfu Zhang;Jincheng Zhang;Yue Hao
subject: heterojunction|tunneling FET (TFET).|SiGeSn|GeSn
Year: 2016
Publisher: IEEE
Abstract: We design a GeSn/SiGeSn type-II staggered heterojunction n-channel tunneling FET (hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by utilizing the nonlocal empirical pseudopotential method. Staggered band alignment at r-point for lattice-matched GeSn/SiGeSn is achieved by tuning the material compositions. The impact of a type-II tunneling junction (TJ) on the electrical performance of hetero-NTFET is investigated through a simulation using a TCAD simulator. Hetero-NTFET exhibits a negative shift of onset voltage VONSET, a steeper subthreshold swing, a higher on-state current I<sub>ON</sub>, and a larger on-state current to off-state current ratio I<sub>ON</sub>/I<sub>OFF</sub> as compared with GeSn homojunction n-channel tunneling FET. A 3.4 times higher ION is achieved in Ge<sub>0.90</sub>Sn<sub>0.10</sub>/Si<sub>0.40</sub>Ge<sub>0.40</sub>Sn<sub>0.20</sub> hetero-NTFET in comparison with Ge<sub>0.90</sub>Sn<sub>0.10</sub> homo device at VDD of 0.3 V. A hetero-NTFET exhibits a more abrupt hole profile and a higher hole concentration in a source region near the TJ compared with the homo device due to the presence of the hetero TJ. This contributes to the significantly enhanced band-to-band tunneling rate and tunneling current in the hetero-NTFET.
URI: http://localhost/handle/Hannan/179935
http://localhost/handle/Hannan/647716
ISSN: 0018-9383
1557-9646
volume: 63
issue: 1
Appears in Collections:2016

Files in This Item:
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7349191.pdf3.89 MBAdobe PDFThumbnail
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Title: Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET
Authors: Hongjuan Wang;Genquan Han;Yan Liu;Shengdong Hu;Chunfu Zhang;Jincheng Zhang;Yue Hao
subject: heterojunction|tunneling FET (TFET).|SiGeSn|GeSn
Year: 2016
Publisher: IEEE
Abstract: We design a GeSn/SiGeSn type-II staggered heterojunction n-channel tunneling FET (hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by utilizing the nonlocal empirical pseudopotential method. Staggered band alignment at r-point for lattice-matched GeSn/SiGeSn is achieved by tuning the material compositions. The impact of a type-II tunneling junction (TJ) on the electrical performance of hetero-NTFET is investigated through a simulation using a TCAD simulator. Hetero-NTFET exhibits a negative shift of onset voltage VONSET, a steeper subthreshold swing, a higher on-state current I<sub>ON</sub>, and a larger on-state current to off-state current ratio I<sub>ON</sub>/I<sub>OFF</sub> as compared with GeSn homojunction n-channel tunneling FET. A 3.4 times higher ION is achieved in Ge<sub>0.90</sub>Sn<sub>0.10</sub>/Si<sub>0.40</sub>Ge<sub>0.40</sub>Sn<sub>0.20</sub> hetero-NTFET in comparison with Ge<sub>0.90</sub>Sn<sub>0.10</sub> homo device at VDD of 0.3 V. A hetero-NTFET exhibits a more abrupt hole profile and a higher hole concentration in a source region near the TJ compared with the homo device due to the presence of the hetero TJ. This contributes to the significantly enhanced band-to-band tunneling rate and tunneling current in the hetero-NTFET.
URI: http://localhost/handle/Hannan/179935
http://localhost/handle/Hannan/647716
ISSN: 0018-9383
1557-9646
volume: 63
issue: 1
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7349191.pdf3.89 MBAdobe PDFThumbnail
Preview File
Title: Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET
Authors: Hongjuan Wang;Genquan Han;Yan Liu;Shengdong Hu;Chunfu Zhang;Jincheng Zhang;Yue Hao
subject: heterojunction|tunneling FET (TFET).|SiGeSn|GeSn
Year: 2016
Publisher: IEEE
Abstract: We design a GeSn/SiGeSn type-II staggered heterojunction n-channel tunneling FET (hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by utilizing the nonlocal empirical pseudopotential method. Staggered band alignment at r-point for lattice-matched GeSn/SiGeSn is achieved by tuning the material compositions. The impact of a type-II tunneling junction (TJ) on the electrical performance of hetero-NTFET is investigated through a simulation using a TCAD simulator. Hetero-NTFET exhibits a negative shift of onset voltage VONSET, a steeper subthreshold swing, a higher on-state current I<sub>ON</sub>, and a larger on-state current to off-state current ratio I<sub>ON</sub>/I<sub>OFF</sub> as compared with GeSn homojunction n-channel tunneling FET. A 3.4 times higher ION is achieved in Ge<sub>0.90</sub>Sn<sub>0.10</sub>/Si<sub>0.40</sub>Ge<sub>0.40</sub>Sn<sub>0.20</sub> hetero-NTFET in comparison with Ge<sub>0.90</sub>Sn<sub>0.10</sub> homo device at VDD of 0.3 V. A hetero-NTFET exhibits a more abrupt hole profile and a higher hole concentration in a source region near the TJ compared with the homo device due to the presence of the hetero TJ. This contributes to the significantly enhanced band-to-band tunneling rate and tunneling current in the hetero-NTFET.
URI: http://localhost/handle/Hannan/179935
http://localhost/handle/Hannan/647716
ISSN: 0018-9383
1557-9646
volume: 63
issue: 1
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7349191.pdf3.89 MBAdobe PDFThumbnail
Preview File