Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/628641
Title: A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides
Authors: Mengke Li;Lianxue Zhang;Hongyan Yu;Lijun Yuan;Qiang Kan;Weixi Chen;Ying Ding;Shiyan Li;Junping Mi;Guangzhao Ran;Jiaoqing Pan
subject: buried ridge stripe structure|Hybrid silicon laser|slots
Year: 2016
Publisher: IEEE
Abstract: An InGaAsP-Si hybrid single-mode laser based on etched slots in silicon waveguides was demonstrated operating at 1543 nm. The InGaAsP gain structure was bonded onto a patterned silicon-on-insulator wafer by selective area metal bonding method. The mode-selection mechanism based on a slotted silicon waveguide was applied, in which the parameters were designed using the simulation tool cavity modeling framework. The III-V lasers employed buried ridge stripe structure. The whole fabrication process only needs standard photolithography and inductively coupled plasma etching technology, which reduces cost for ease in technology transfer. At room temperature, a single mode of 1543-nm wavelength at a threshold current of 21 mA with a maximum output power of 1.9 mW in continuous-wave regime was obtained. The side mode suppression ratio was larger than 35 dB. The simplicity and flexibility of the fabrication process and a low cost make the slotted hybrid laser a promising light source.
URI: http://localhost/handle/Hannan/163427
http://localhost/handle/Hannan/628641
ISSN: 1041-1135
1941-0174
volume: 28
issue: 9
Appears in Collections:2016

Files in This Item:
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Title: A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides
Authors: Mengke Li;Lianxue Zhang;Hongyan Yu;Lijun Yuan;Qiang Kan;Weixi Chen;Ying Ding;Shiyan Li;Junping Mi;Guangzhao Ran;Jiaoqing Pan
subject: buried ridge stripe structure|Hybrid silicon laser|slots
Year: 2016
Publisher: IEEE
Abstract: An InGaAsP-Si hybrid single-mode laser based on etched slots in silicon waveguides was demonstrated operating at 1543 nm. The InGaAsP gain structure was bonded onto a patterned silicon-on-insulator wafer by selective area metal bonding method. The mode-selection mechanism based on a slotted silicon waveguide was applied, in which the parameters were designed using the simulation tool cavity modeling framework. The III-V lasers employed buried ridge stripe structure. The whole fabrication process only needs standard photolithography and inductively coupled plasma etching technology, which reduces cost for ease in technology transfer. At room temperature, a single mode of 1543-nm wavelength at a threshold current of 21 mA with a maximum output power of 1.9 mW in continuous-wave regime was obtained. The side mode suppression ratio was larger than 35 dB. The simplicity and flexibility of the fabrication process and a low cost make the slotted hybrid laser a promising light source.
URI: http://localhost/handle/Hannan/163427
http://localhost/handle/Hannan/628641
ISSN: 1041-1135
1941-0174
volume: 28
issue: 9
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7395284.pdf846.39 kBAdobe PDFThumbnail
Preview File
Title: A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides
Authors: Mengke Li;Lianxue Zhang;Hongyan Yu;Lijun Yuan;Qiang Kan;Weixi Chen;Ying Ding;Shiyan Li;Junping Mi;Guangzhao Ran;Jiaoqing Pan
subject: buried ridge stripe structure|Hybrid silicon laser|slots
Year: 2016
Publisher: IEEE
Abstract: An InGaAsP-Si hybrid single-mode laser based on etched slots in silicon waveguides was demonstrated operating at 1543 nm. The InGaAsP gain structure was bonded onto a patterned silicon-on-insulator wafer by selective area metal bonding method. The mode-selection mechanism based on a slotted silicon waveguide was applied, in which the parameters were designed using the simulation tool cavity modeling framework. The III-V lasers employed buried ridge stripe structure. The whole fabrication process only needs standard photolithography and inductively coupled plasma etching technology, which reduces cost for ease in technology transfer. At room temperature, a single mode of 1543-nm wavelength at a threshold current of 21 mA with a maximum output power of 1.9 mW in continuous-wave regime was obtained. The side mode suppression ratio was larger than 35 dB. The simplicity and flexibility of the fabrication process and a low cost make the slotted hybrid laser a promising light source.
URI: http://localhost/handle/Hannan/163427
http://localhost/handle/Hannan/628641
ISSN: 1041-1135
1941-0174
volume: 28
issue: 9
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7395284.pdf846.39 kBAdobe PDFThumbnail
Preview File