Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/626222
Title: Evanescent Hybrid Si Laser With Buried Ridge Stripe Structure
Authors: Hongyan Yu;Lijun Yuan;Li Tao;Weixi Chen;Yanping Li;Ying Ding;Guangzhao Ran;Jiaoqing Pan;Wei Wang
subject: buried ridge stripe structure|selective area metal bonding method|Hybrid laser
Year: 2016
Publisher: IEEE
Abstract: An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on a selective area metal bonding method is demonstrated. There are the advantages of good optical field, high thermal performance, and improved carrier and photon confinement by adopting this BRS laser structure. The III-V waveguide with the first-order grating corrugations is fabricated by conventional holographic lithography and standard photolithography. A threshold current as low as 5 mA at room temperature in continuous-wave operation and a side-mode suppression ratio as high as 40 dB with mode-hop free higher than 45 °C were achieved.
URI: http://localhost/handle/Hannan/161973
http://localhost/handle/Hannan/626222
ISSN: 1041-1135
1941-0174
volume: 28
issue: 10
Appears in Collections:2016

Files in This Item:
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Title: Evanescent Hybrid Si Laser With Buried Ridge Stripe Structure
Authors: Hongyan Yu;Lijun Yuan;Li Tao;Weixi Chen;Yanping Li;Ying Ding;Guangzhao Ran;Jiaoqing Pan;Wei Wang
subject: buried ridge stripe structure|selective area metal bonding method|Hybrid laser
Year: 2016
Publisher: IEEE
Abstract: An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on a selective area metal bonding method is demonstrated. There are the advantages of good optical field, high thermal performance, and improved carrier and photon confinement by adopting this BRS laser structure. The III-V waveguide with the first-order grating corrugations is fabricated by conventional holographic lithography and standard photolithography. A threshold current as low as 5 mA at room temperature in continuous-wave operation and a side-mode suppression ratio as high as 40 dB with mode-hop free higher than 45 °C were achieved.
URI: http://localhost/handle/Hannan/161973
http://localhost/handle/Hannan/626222
ISSN: 1041-1135
1941-0174
volume: 28
issue: 10
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7421960.pdf1.13 MBAdobe PDFThumbnail
Preview File
Title: Evanescent Hybrid Si Laser With Buried Ridge Stripe Structure
Authors: Hongyan Yu;Lijun Yuan;Li Tao;Weixi Chen;Yanping Li;Ying Ding;Guangzhao Ran;Jiaoqing Pan;Wei Wang
subject: buried ridge stripe structure|selective area metal bonding method|Hybrid laser
Year: 2016
Publisher: IEEE
Abstract: An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on a selective area metal bonding method is demonstrated. There are the advantages of good optical field, high thermal performance, and improved carrier and photon confinement by adopting this BRS laser structure. The III-V waveguide with the first-order grating corrugations is fabricated by conventional holographic lithography and standard photolithography. A threshold current as low as 5 mA at room temperature in continuous-wave operation and a side-mode suppression ratio as high as 40 dB with mode-hop free higher than 45 °C were achieved.
URI: http://localhost/handle/Hannan/161973
http://localhost/handle/Hannan/626222
ISSN: 1041-1135
1941-0174
volume: 28
issue: 10
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7421960.pdf1.13 MBAdobe PDFThumbnail
Preview File