Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/598953
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dc.contributor.authorXiangting Kongen_US
dc.contributor.authorRenrong Liangen_US
dc.contributor.authorXuliang Zhouen_US
dc.contributor.authorShiyan Lien_US
dc.contributor.authorMengqi Wangen_US
dc.contributor.authorHonggang Liuen_US
dc.contributor.authorJing Wangen_US
dc.contributor.authorWei Wangen_US
dc.contributor.authorJiaoqing Panen_US
dc.date.accessioned2020-05-20T08:53:27Z-
dc.date.available2020-05-20T08:53:27Z-
dc.date.issued2016en_US
dc.identifier.issn0018-9383en_US
dc.identifier.issn1557-9646en_US
dc.identifier.other10.1109/TED.2016.2581983en_US
dc.identifier.urihttp://localhost/handle/Hannan/179159en_US
dc.identifier.urihttp://localhost/handle/Hannan/598953-
dc.description.abstractThis paper mainly describes the comparison of I<sub>ON</sub>/I<sub>OFF</sub> ratio and mobility between SiGe substrate and GaAs substrate In<sub>0.23</sub>Ga<sub>0.77</sub>As channel MOSFETs grown by metalorganic chemical vapor deposition. In order to make the comparison more reasonable, we choose the same size (Lg = 10 &#x03BC;m) for both the SiGe substrate and GaAs substrate MOSFETs. As for the SiGe substrate MOSFETs, its highest ON-current to the lowest OFF-current (I<sub>ON</sub>/I<sub>OFF</sub>) ratio is less than 1&#x00D7;103, while that of GaAs substrate MOSFETs are up to 4&#x00D7;104 (both at a gate bias of 3 V). Due to the Ge diffusion into the InGaAs channel, it will make the intrinsic channel become an n-type doped semiconductor and then influence the pinchoff characteristics. The maximum effective mobility of SiGe substrate MOSFETs is 1800 cm2 /V &#x00B7; s and that of GaAs substrate MOSFETs is up to 2090 cm2/V &#x00B7; s. The main reason for the higher mobility of GaAs substrate MOSFETs is maybe due to its smaller density interface trap density Dit and undoped InGaAs channel. Through comparing the performance, particularly the I<sub>ON</sub>/I<sub>OFF</sub> ratio and mobility between SiGe substrate and GaAs substrate MOSFETs, we aim to find out some feasible methods to improve the performance of InGaAs channel MOSFETs on SiGe substrate.en_US
dc.publisherIEEEen_US
dc.relation.haspart7499864.pdfen_US
dc.subjectInGaAs channel|SiGe substrate|Current ratio|mobility|MOSFETsen_US
dc.titleThe Comparison of Current Ratio I_{\mathrm{\scriptscriptstyle ON}}/I_{\mathrm{\scriptscriptstyle OFF}} and Mobility Between SiGe Substrate and GaAs Substrate In0.23Ga0.77As Channel MOSFETsen_US
dc.typeArticleen_US
dc.journal.volume63en_US
dc.journal.issue8en_US
dc.journal.titleIEEE Transactions on Electron Devicesen_US
Appears in Collections:2016

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Full metadata record
DC FieldValueLanguage
dc.contributor.authorXiangting Kongen_US
dc.contributor.authorRenrong Liangen_US
dc.contributor.authorXuliang Zhouen_US
dc.contributor.authorShiyan Lien_US
dc.contributor.authorMengqi Wangen_US
dc.contributor.authorHonggang Liuen_US
dc.contributor.authorJing Wangen_US
dc.contributor.authorWei Wangen_US
dc.contributor.authorJiaoqing Panen_US
dc.date.accessioned2020-05-20T08:53:27Z-
dc.date.available2020-05-20T08:53:27Z-
dc.date.issued2016en_US
dc.identifier.issn0018-9383en_US
dc.identifier.issn1557-9646en_US
dc.identifier.other10.1109/TED.2016.2581983en_US
dc.identifier.urihttp://localhost/handle/Hannan/179159en_US
dc.identifier.urihttp://localhost/handle/Hannan/598953-
dc.description.abstractThis paper mainly describes the comparison of I<sub>ON</sub>/I<sub>OFF</sub> ratio and mobility between SiGe substrate and GaAs substrate In<sub>0.23</sub>Ga<sub>0.77</sub>As channel MOSFETs grown by metalorganic chemical vapor deposition. In order to make the comparison more reasonable, we choose the same size (Lg = 10 &#x03BC;m) for both the SiGe substrate and GaAs substrate MOSFETs. As for the SiGe substrate MOSFETs, its highest ON-current to the lowest OFF-current (I<sub>ON</sub>/I<sub>OFF</sub>) ratio is less than 1&#x00D7;103, while that of GaAs substrate MOSFETs are up to 4&#x00D7;104 (both at a gate bias of 3 V). Due to the Ge diffusion into the InGaAs channel, it will make the intrinsic channel become an n-type doped semiconductor and then influence the pinchoff characteristics. The maximum effective mobility of SiGe substrate MOSFETs is 1800 cm2 /V &#x00B7; s and that of GaAs substrate MOSFETs is up to 2090 cm2/V &#x00B7; s. The main reason for the higher mobility of GaAs substrate MOSFETs is maybe due to its smaller density interface trap density Dit and undoped InGaAs channel. Through comparing the performance, particularly the I<sub>ON</sub>/I<sub>OFF</sub> ratio and mobility between SiGe substrate and GaAs substrate MOSFETs, we aim to find out some feasible methods to improve the performance of InGaAs channel MOSFETs on SiGe substrate.en_US
dc.publisherIEEEen_US
dc.relation.haspart7499864.pdfen_US
dc.subjectInGaAs channel|SiGe substrate|Current ratio|mobility|MOSFETsen_US
dc.titleThe Comparison of Current Ratio I_{\mathrm{\scriptscriptstyle ON}}/I_{\mathrm{\scriptscriptstyle OFF}} and Mobility Between SiGe Substrate and GaAs Substrate In0.23Ga0.77As Channel MOSFETsen_US
dc.typeArticleen_US
dc.journal.volume63en_US
dc.journal.issue8en_US
dc.journal.titleIEEE Transactions on Electron Devicesen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7499864.pdf1.35 MBAdobe PDFThumbnail
Preview File
Full metadata record
DC FieldValueLanguage
dc.contributor.authorXiangting Kongen_US
dc.contributor.authorRenrong Liangen_US
dc.contributor.authorXuliang Zhouen_US
dc.contributor.authorShiyan Lien_US
dc.contributor.authorMengqi Wangen_US
dc.contributor.authorHonggang Liuen_US
dc.contributor.authorJing Wangen_US
dc.contributor.authorWei Wangen_US
dc.contributor.authorJiaoqing Panen_US
dc.date.accessioned2020-05-20T08:53:27Z-
dc.date.available2020-05-20T08:53:27Z-
dc.date.issued2016en_US
dc.identifier.issn0018-9383en_US
dc.identifier.issn1557-9646en_US
dc.identifier.other10.1109/TED.2016.2581983en_US
dc.identifier.urihttp://localhost/handle/Hannan/179159en_US
dc.identifier.urihttp://localhost/handle/Hannan/598953-
dc.description.abstractThis paper mainly describes the comparison of I<sub>ON</sub>/I<sub>OFF</sub> ratio and mobility between SiGe substrate and GaAs substrate In<sub>0.23</sub>Ga<sub>0.77</sub>As channel MOSFETs grown by metalorganic chemical vapor deposition. In order to make the comparison more reasonable, we choose the same size (Lg = 10 &#x03BC;m) for both the SiGe substrate and GaAs substrate MOSFETs. As for the SiGe substrate MOSFETs, its highest ON-current to the lowest OFF-current (I<sub>ON</sub>/I<sub>OFF</sub>) ratio is less than 1&#x00D7;103, while that of GaAs substrate MOSFETs are up to 4&#x00D7;104 (both at a gate bias of 3 V). Due to the Ge diffusion into the InGaAs channel, it will make the intrinsic channel become an n-type doped semiconductor and then influence the pinchoff characteristics. The maximum effective mobility of SiGe substrate MOSFETs is 1800 cm2 /V &#x00B7; s and that of GaAs substrate MOSFETs is up to 2090 cm2/V &#x00B7; s. The main reason for the higher mobility of GaAs substrate MOSFETs is maybe due to its smaller density interface trap density Dit and undoped InGaAs channel. Through comparing the performance, particularly the I<sub>ON</sub>/I<sub>OFF</sub> ratio and mobility between SiGe substrate and GaAs substrate MOSFETs, we aim to find out some feasible methods to improve the performance of InGaAs channel MOSFETs on SiGe substrate.en_US
dc.publisherIEEEen_US
dc.relation.haspart7499864.pdfen_US
dc.subjectInGaAs channel|SiGe substrate|Current ratio|mobility|MOSFETsen_US
dc.titleThe Comparison of Current Ratio I_{\mathrm{\scriptscriptstyle ON}}/I_{\mathrm{\scriptscriptstyle OFF}} and Mobility Between SiGe Substrate and GaAs Substrate In0.23Ga0.77As Channel MOSFETsen_US
dc.typeArticleen_US
dc.journal.volume63en_US
dc.journal.issue8en_US
dc.journal.titleIEEE Transactions on Electron Devicesen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7499864.pdf1.35 MBAdobe PDFThumbnail
Preview File