Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/595782
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dc.contributor.authorYong Liuen_US
dc.contributor.authorJing Ting Luoen_US
dc.contributor.authorChao Zhaoen_US
dc.contributor.authorJian Zhouen_US
dc.contributor.authorSameer Ahmad Hasanen_US
dc.contributor.authorYifan Lien_US
dc.contributor.authorMichael Cookeen_US
dc.contributor.authorQiang Wuen_US
dc.contributor.authorWai Pang Ngen_US
dc.contributor.authorJiang Feng Duen_US
dc.contributor.authorQi Yuen_US
dc.contributor.authorYang Liuen_US
dc.contributor.authorYong Qing Fuen_US
dc.date.accessioned2020-05-20T08:49:12Z-
dc.date.available2020-05-20T08:49:12Z-
dc.date.issued2016en_US
dc.identifier.issn0018-9383en_US
dc.identifier.issn1557-9646en_US
dc.identifier.other10.1109/TED.2016.2610466en_US
dc.identifier.urihttp://localhost/handle/Hannan/176509en_US
dc.identifier.urihttp://localhost/handle/Hannan/595782-
dc.description.abstractThis paper reports post-annealing of zinc oxide (ZnO) films on flexible foil substrates in order to improve the functional and acoustic wave sensing performance. ZnO films of 5 μm thick were deposited onto aluminum foils (50 μm thick) using magnetron sputtering and then annealed in air at different temperatures between 300 °C and 500 °C. Effects of postannealing on structural, optical, and device properties of the ZnO films and ZnO/Al foil acoustic wave devices were investigated. A temperature of 350 °C was identified as the optimized annealing temperature, which resulted in good light transmission, improved crystallinity, reduced film stress/defects, and increased amplitude of reflection signals of both Lamb and Rayleigh waves. The annealed ZnO/Al acoustic wave devices demonstrated a large temperature coefficient of frequency and a good linearity, revealing the potential for precise temperature sensing.en_US
dc.publisherIEEEen_US
dc.relation.haspart7588108.pdfen_US
dc.subjectsensor|ZnO|surface acoustic wave (SAW)|annealing|Al|flexibleen_US
dc.titleAnnealing Effect on Structural, Functional, and Device Properties of Flexible ZnO Acoustic Wave Sensors Based on Commercially Available Al Foilen_US
dc.typeArticleen_US
dc.journal.volume63en_US
dc.journal.issue11en_US
dc.journal.titleIEEE Transactions on Electron Devicesen_US
Appears in Collections:2016

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Full metadata record
DC FieldValueLanguage
dc.contributor.authorYong Liuen_US
dc.contributor.authorJing Ting Luoen_US
dc.contributor.authorChao Zhaoen_US
dc.contributor.authorJian Zhouen_US
dc.contributor.authorSameer Ahmad Hasanen_US
dc.contributor.authorYifan Lien_US
dc.contributor.authorMichael Cookeen_US
dc.contributor.authorQiang Wuen_US
dc.contributor.authorWai Pang Ngen_US
dc.contributor.authorJiang Feng Duen_US
dc.contributor.authorQi Yuen_US
dc.contributor.authorYang Liuen_US
dc.contributor.authorYong Qing Fuen_US
dc.date.accessioned2020-05-20T08:49:12Z-
dc.date.available2020-05-20T08:49:12Z-
dc.date.issued2016en_US
dc.identifier.issn0018-9383en_US
dc.identifier.issn1557-9646en_US
dc.identifier.other10.1109/TED.2016.2610466en_US
dc.identifier.urihttp://localhost/handle/Hannan/176509en_US
dc.identifier.urihttp://localhost/handle/Hannan/595782-
dc.description.abstractThis paper reports post-annealing of zinc oxide (ZnO) films on flexible foil substrates in order to improve the functional and acoustic wave sensing performance. ZnO films of 5 μm thick were deposited onto aluminum foils (50 μm thick) using magnetron sputtering and then annealed in air at different temperatures between 300 °C and 500 °C. Effects of postannealing on structural, optical, and device properties of the ZnO films and ZnO/Al foil acoustic wave devices were investigated. A temperature of 350 °C was identified as the optimized annealing temperature, which resulted in good light transmission, improved crystallinity, reduced film stress/defects, and increased amplitude of reflection signals of both Lamb and Rayleigh waves. The annealed ZnO/Al acoustic wave devices demonstrated a large temperature coefficient of frequency and a good linearity, revealing the potential for precise temperature sensing.en_US
dc.publisherIEEEen_US
dc.relation.haspart7588108.pdfen_US
dc.subjectsensor|ZnO|surface acoustic wave (SAW)|annealing|Al|flexibleen_US
dc.titleAnnealing Effect on Structural, Functional, and Device Properties of Flexible ZnO Acoustic Wave Sensors Based on Commercially Available Al Foilen_US
dc.typeArticleen_US
dc.journal.volume63en_US
dc.journal.issue11en_US
dc.journal.titleIEEE Transactions on Electron Devicesen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7588108.pdf1.86 MBAdobe PDFThumbnail
Preview File
Full metadata record
DC FieldValueLanguage
dc.contributor.authorYong Liuen_US
dc.contributor.authorJing Ting Luoen_US
dc.contributor.authorChao Zhaoen_US
dc.contributor.authorJian Zhouen_US
dc.contributor.authorSameer Ahmad Hasanen_US
dc.contributor.authorYifan Lien_US
dc.contributor.authorMichael Cookeen_US
dc.contributor.authorQiang Wuen_US
dc.contributor.authorWai Pang Ngen_US
dc.contributor.authorJiang Feng Duen_US
dc.contributor.authorQi Yuen_US
dc.contributor.authorYang Liuen_US
dc.contributor.authorYong Qing Fuen_US
dc.date.accessioned2020-05-20T08:49:12Z-
dc.date.available2020-05-20T08:49:12Z-
dc.date.issued2016en_US
dc.identifier.issn0018-9383en_US
dc.identifier.issn1557-9646en_US
dc.identifier.other10.1109/TED.2016.2610466en_US
dc.identifier.urihttp://localhost/handle/Hannan/176509en_US
dc.identifier.urihttp://localhost/handle/Hannan/595782-
dc.description.abstractThis paper reports post-annealing of zinc oxide (ZnO) films on flexible foil substrates in order to improve the functional and acoustic wave sensing performance. ZnO films of 5 μm thick were deposited onto aluminum foils (50 μm thick) using magnetron sputtering and then annealed in air at different temperatures between 300 °C and 500 °C. Effects of postannealing on structural, optical, and device properties of the ZnO films and ZnO/Al foil acoustic wave devices were investigated. A temperature of 350 °C was identified as the optimized annealing temperature, which resulted in good light transmission, improved crystallinity, reduced film stress/defects, and increased amplitude of reflection signals of both Lamb and Rayleigh waves. The annealed ZnO/Al acoustic wave devices demonstrated a large temperature coefficient of frequency and a good linearity, revealing the potential for precise temperature sensing.en_US
dc.publisherIEEEen_US
dc.relation.haspart7588108.pdfen_US
dc.subjectsensor|ZnO|surface acoustic wave (SAW)|annealing|Al|flexibleen_US
dc.titleAnnealing Effect on Structural, Functional, and Device Properties of Flexible ZnO Acoustic Wave Sensors Based on Commercially Available Al Foilen_US
dc.typeArticleen_US
dc.journal.volume63en_US
dc.journal.issue11en_US
dc.journal.titleIEEE Transactions on Electron Devicesen_US
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7588108.pdf1.86 MBAdobe PDFThumbnail
Preview File