Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/594248
Title: An InGaN-Based Solar Cell Including Dual InGaN/GaN Multiple Quantum Wells
Authors: Zhen Bi;Jincheng Zhang;Qiye Zheng;Ling Lv;Zhiyu Lin;Hengsheng Shan;Peixian Li;Xiaohua Ma;Yiping Han;Yue Hao
subject: MQWs|InGaN|Conversion efficiency|solar cells
Year: 2016
Publisher: IEEE
Abstract: An InGaN/GaN solar cell including a dual multiple quantum wells (MQWs) structure is investigated. It shows an obvious advantage over the conventional InGaN/GaN cell, which only contains a single MQWs structure. Because the short current density (J<sub>SC</sub>) increases, the 1 sun power conversion efficiency significantly improves from 0.62% (single MQWs cell) to 1.02% (dual MQWs cell). From the measurement of EQE and PL spectra, the enhancement of effective photoelectric response within the solar spectrum mainly contributes to the high device performance, due to the introduced upper MQWs of higher In content.
URI: http://localhost/handle/Hannan/175711
http://localhost/handle/Hannan/594248
ISSN: 1041-1135
1941-0174
volume: 28
issue: 20
Appears in Collections:2016

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Title: An InGaN-Based Solar Cell Including Dual InGaN/GaN Multiple Quantum Wells
Authors: Zhen Bi;Jincheng Zhang;Qiye Zheng;Ling Lv;Zhiyu Lin;Hengsheng Shan;Peixian Li;Xiaohua Ma;Yiping Han;Yue Hao
subject: MQWs|InGaN|Conversion efficiency|solar cells
Year: 2016
Publisher: IEEE
Abstract: An InGaN/GaN solar cell including a dual multiple quantum wells (MQWs) structure is investigated. It shows an obvious advantage over the conventional InGaN/GaN cell, which only contains a single MQWs structure. Because the short current density (J<sub>SC</sub>) increases, the 1 sun power conversion efficiency significantly improves from 0.62% (single MQWs cell) to 1.02% (dual MQWs cell). From the measurement of EQE and PL spectra, the enhancement of effective photoelectric response within the solar spectrum mainly contributes to the high device performance, due to the introduced upper MQWs of higher In content.
URI: http://localhost/handle/Hannan/175711
http://localhost/handle/Hannan/594248
ISSN: 1041-1135
1941-0174
volume: 28
issue: 20
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7484268.pdf852.73 kBAdobe PDFThumbnail
Preview File
Title: An InGaN-Based Solar Cell Including Dual InGaN/GaN Multiple Quantum Wells
Authors: Zhen Bi;Jincheng Zhang;Qiye Zheng;Ling Lv;Zhiyu Lin;Hengsheng Shan;Peixian Li;Xiaohua Ma;Yiping Han;Yue Hao
subject: MQWs|InGaN|Conversion efficiency|solar cells
Year: 2016
Publisher: IEEE
Abstract: An InGaN/GaN solar cell including a dual multiple quantum wells (MQWs) structure is investigated. It shows an obvious advantage over the conventional InGaN/GaN cell, which only contains a single MQWs structure. Because the short current density (J<sub>SC</sub>) increases, the 1 sun power conversion efficiency significantly improves from 0.62% (single MQWs cell) to 1.02% (dual MQWs cell). From the measurement of EQE and PL spectra, the enhancement of effective photoelectric response within the solar spectrum mainly contributes to the high device performance, due to the introduced upper MQWs of higher In content.
URI: http://localhost/handle/Hannan/175711
http://localhost/handle/Hannan/594248
ISSN: 1041-1135
1941-0174
volume: 28
issue: 20
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7484268.pdf852.73 kBAdobe PDFThumbnail
Preview File