Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/586571
Title: A Polarization Splitter and Rotator Based on a Partially Etched Grating-Assisted Coupler
Authors: Ting Hu;Mohamed Saïd Rouifed;Haodong Qiu;Xin Guo;Callum G. Littlejohns;Chongyong Liu;Hong Wang
subject: Silicon on insulator (SOI)|mid-infrared|grating-assisted coupler|polarization splitter and rotator
Year: 2016
Publisher: IEEE
Abstract: A fabrication-tolerant mid-infrared silicon polarization splitter and rotator (PSR) based on a partially etched grating-assisted coupler is proposed. The design of the partially etched structure allows to use different cladding layers, such as SiO2, to make the device compatible with the metal back-end of line process. Moreover, by using the grating-assisted coupler, the device is no longer limited by the precise requirement of the coupling length and strength as those in its counterparts based on directional couplers. The simulation results show that the PSR can work over a wide spectral range of 50 nm around the mid-infrared wavelength of 2.5 μm with the typical transverse electric (TE) to transverse magnetic (TM) polarization conversion efficiency of 96.83%, the conversion loss of -0.97 dB, and the polarization crosstalk of -21.48 dB. The TM-to-TM through insertion loss is around -0.76 dB. The effects of the fabrication errors are analyzed. The numerical simulation results demonstrate that the device has a good fabrication tolerance larger than 45 nm.
URI: http://localhost/handle/Hannan/166930
http://localhost/handle/Hannan/586571
ISSN: 1041-1135
1941-0174
volume: 28
issue: 8
Appears in Collections:2016

Files in This Item:
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Title: A Polarization Splitter and Rotator Based on a Partially Etched Grating-Assisted Coupler
Authors: Ting Hu;Mohamed Saïd Rouifed;Haodong Qiu;Xin Guo;Callum G. Littlejohns;Chongyong Liu;Hong Wang
subject: Silicon on insulator (SOI)|mid-infrared|grating-assisted coupler|polarization splitter and rotator
Year: 2016
Publisher: IEEE
Abstract: A fabrication-tolerant mid-infrared silicon polarization splitter and rotator (PSR) based on a partially etched grating-assisted coupler is proposed. The design of the partially etched structure allows to use different cladding layers, such as SiO2, to make the device compatible with the metal back-end of line process. Moreover, by using the grating-assisted coupler, the device is no longer limited by the precise requirement of the coupling length and strength as those in its counterparts based on directional couplers. The simulation results show that the PSR can work over a wide spectral range of 50 nm around the mid-infrared wavelength of 2.5 μm with the typical transverse electric (TE) to transverse magnetic (TM) polarization conversion efficiency of 96.83%, the conversion loss of -0.97 dB, and the polarization crosstalk of -21.48 dB. The TM-to-TM through insertion loss is around -0.76 dB. The effects of the fabrication errors are analyzed. The numerical simulation results demonstrate that the device has a good fabrication tolerance larger than 45 nm.
URI: http://localhost/handle/Hannan/166930
http://localhost/handle/Hannan/586571
ISSN: 1041-1135
1941-0174
volume: 28
issue: 8
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7378857.pdf1.42 MBAdobe PDFThumbnail
Preview File
Title: A Polarization Splitter and Rotator Based on a Partially Etched Grating-Assisted Coupler
Authors: Ting Hu;Mohamed Saïd Rouifed;Haodong Qiu;Xin Guo;Callum G. Littlejohns;Chongyong Liu;Hong Wang
subject: Silicon on insulator (SOI)|mid-infrared|grating-assisted coupler|polarization splitter and rotator
Year: 2016
Publisher: IEEE
Abstract: A fabrication-tolerant mid-infrared silicon polarization splitter and rotator (PSR) based on a partially etched grating-assisted coupler is proposed. The design of the partially etched structure allows to use different cladding layers, such as SiO2, to make the device compatible with the metal back-end of line process. Moreover, by using the grating-assisted coupler, the device is no longer limited by the precise requirement of the coupling length and strength as those in its counterparts based on directional couplers. The simulation results show that the PSR can work over a wide spectral range of 50 nm around the mid-infrared wavelength of 2.5 μm with the typical transverse electric (TE) to transverse magnetic (TM) polarization conversion efficiency of 96.83%, the conversion loss of -0.97 dB, and the polarization crosstalk of -21.48 dB. The TM-to-TM through insertion loss is around -0.76 dB. The effects of the fabrication errors are analyzed. The numerical simulation results demonstrate that the device has a good fabrication tolerance larger than 45 nm.
URI: http://localhost/handle/Hannan/166930
http://localhost/handle/Hannan/586571
ISSN: 1041-1135
1941-0174
volume: 28
issue: 8
Appears in Collections:2016

Files in This Item:
File Description SizeFormat 
7378857.pdf1.42 MBAdobe PDFThumbnail
Preview File