Please use this identifier to cite or link to this item: http://dlib.scu.ac.ir/handle/Hannan/485248
Title: Mach&x2013;Zehnder Interferometer-Based Integrated Terahertz Temperature Sensor
Authors: Youqiao Ma;Nghia Nguyen-Huu;Jun Zhou;Hiroshi Maeda;Qiang Wu;Mohamed Eldlio;Jarom&x00ED;r Pi&x0161;tora;Michael Cada
Year: 2017
Publisher: IEEE
Abstract: A plasmonic Mach-Zehnder interferometer (MZI) for temperature sensing is reported in the terahertz (THz) regime. The MZI is formed by embedding a semiconductor (SC) layer into a silicon membrane, where the SC layer supports two independent propagating surface plasmon polariton (SPP) waves on both surfaces. The temperature-sensitive phase difference between these two SPP waves gives rise to the modulation of the transmitted intensity. The results show that the MZI sensor possesses a sensitivity and a figure of merit as high as 8.9 &x00D7; 10<sup>-3</sup> THz/K and 117, respectively. Theoretical calculations indicate that the further improvement in sensing performance is still possible through optimization of the structure Moreover, an investigation of structural perturbations indicates that the MZI has a good tolerance to the fabrication errors. The compact MZI-based waveguide structure may find important applications in areas of sensing and integrated THz circuits.
URI: http://dl.kums.ac.ir/handle/Hannan/485248
volume: 23
issue: 4
More Information: 1,
7
Appears in Collections:2017

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Title: Mach&x2013;Zehnder Interferometer-Based Integrated Terahertz Temperature Sensor
Authors: Youqiao Ma;Nghia Nguyen-Huu;Jun Zhou;Hiroshi Maeda;Qiang Wu;Mohamed Eldlio;Jarom&x00ED;r Pi&x0161;tora;Michael Cada
Year: 2017
Publisher: IEEE
Abstract: A plasmonic Mach-Zehnder interferometer (MZI) for temperature sensing is reported in the terahertz (THz) regime. The MZI is formed by embedding a semiconductor (SC) layer into a silicon membrane, where the SC layer supports two independent propagating surface plasmon polariton (SPP) waves on both surfaces. The temperature-sensitive phase difference between these two SPP waves gives rise to the modulation of the transmitted intensity. The results show that the MZI sensor possesses a sensitivity and a figure of merit as high as 8.9 &x00D7; 10<sup>-3</sup> THz/K and 117, respectively. Theoretical calculations indicate that the further improvement in sensing performance is still possible through optimization of the structure Moreover, an investigation of structural perturbations indicates that the MZI has a good tolerance to the fabrication errors. The compact MZI-based waveguide structure may find important applications in areas of sensing and integrated THz circuits.
URI: http://dl.kums.ac.ir/handle/Hannan/485248
volume: 23
issue: 4
More Information: 1,
7
Appears in Collections:2017

Files in This Item:
File Description SizeFormat 
7835682.pdf1.71 MBAdobe PDFThumbnail
Preview File
Title: Mach&x2013;Zehnder Interferometer-Based Integrated Terahertz Temperature Sensor
Authors: Youqiao Ma;Nghia Nguyen-Huu;Jun Zhou;Hiroshi Maeda;Qiang Wu;Mohamed Eldlio;Jarom&x00ED;r Pi&x0161;tora;Michael Cada
Year: 2017
Publisher: IEEE
Abstract: A plasmonic Mach-Zehnder interferometer (MZI) for temperature sensing is reported in the terahertz (THz) regime. The MZI is formed by embedding a semiconductor (SC) layer into a silicon membrane, where the SC layer supports two independent propagating surface plasmon polariton (SPP) waves on both surfaces. The temperature-sensitive phase difference between these two SPP waves gives rise to the modulation of the transmitted intensity. The results show that the MZI sensor possesses a sensitivity and a figure of merit as high as 8.9 &x00D7; 10<sup>-3</sup> THz/K and 117, respectively. Theoretical calculations indicate that the further improvement in sensing performance is still possible through optimization of the structure Moreover, an investigation of structural perturbations indicates that the MZI has a good tolerance to the fabrication errors. The compact MZI-based waveguide structure may find important applications in areas of sensing and integrated THz circuits.
URI: http://dl.kums.ac.ir/handle/Hannan/485248
volume: 23
issue: 4
More Information: 1,
7
Appears in Collections:2017

Files in This Item:
File Description SizeFormat 
7835682.pdf1.71 MBAdobe PDFThumbnail
Preview File