Please use this identifier to cite or link to this item: http://localhost/handle/Hannan/476639
Title: Active 220- and 325-GHz frequency multiplier chains in an SiGe HBT technology
Authors: Öjefors, Erik;Heinemann, Bernd;Pfeiffer, Ullrich R.
subject: Frequency multipliers;heterojunction bipolar transistor (HBT);millimeter-wave integrated circuits;silicon;submillimeter waves
Year: 2011
Abstract: A 325-GHz ×18 frequency multiplier chain implemented in a fτ/fmax = 250 GHz/380 GHz evaluation SiGe heterojunction bipolar transistor technology is presented. The chain achieves a peak output power of -3 dBm and consists of a balanced doubler driven by two cascaded tripler stages. It operates from 317 to 328 GHz with a 0-dBm 18-GHz input signal and a 1.5-W power consumption. Additionally, 220- and 325-GHz doubler breakout circuits with integrated driver amplifiers are presented. The doublers reach an output power of -1 dBm at 220 GHz and -3 dBm at 325 GHz with a power dissipation of 630 and 420 mW, respectively.
Description: 

URI: http://localhost/handle/Hannan/295979
http://localhost/handle/Hannan/476639
Appears in Collections:2011

Files in This Item:
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AL1932899.pdf987.35 kBAdobe PDF
Title: Active 220- and 325-GHz frequency multiplier chains in an SiGe HBT technology
Authors: Öjefors, Erik;Heinemann, Bernd;Pfeiffer, Ullrich R.
subject: Frequency multipliers;heterojunction bipolar transistor (HBT);millimeter-wave integrated circuits;silicon;submillimeter waves
Year: 2011
Abstract: A 325-GHz ×18 frequency multiplier chain implemented in a fτ/fmax = 250 GHz/380 GHz evaluation SiGe heterojunction bipolar transistor technology is presented. The chain achieves a peak output power of -3 dBm and consists of a balanced doubler driven by two cascaded tripler stages. It operates from 317 to 328 GHz with a 0-dBm 18-GHz input signal and a 1.5-W power consumption. Additionally, 220- and 325-GHz doubler breakout circuits with integrated driver amplifiers are presented. The doublers reach an output power of -1 dBm at 220 GHz and -3 dBm at 325 GHz with a power dissipation of 630 and 420 mW, respectively.
Description: 

URI: http://localhost/handle/Hannan/295979
http://localhost/handle/Hannan/476639
Appears in Collections:2011

Files in This Item:
File SizeFormat 
AL1932899.pdf987.35 kBAdobe PDF
Title: Active 220- and 325-GHz frequency multiplier chains in an SiGe HBT technology
Authors: Öjefors, Erik;Heinemann, Bernd;Pfeiffer, Ullrich R.
subject: Frequency multipliers;heterojunction bipolar transistor (HBT);millimeter-wave integrated circuits;silicon;submillimeter waves
Year: 2011
Abstract: A 325-GHz ×18 frequency multiplier chain implemented in a fτ/fmax = 250 GHz/380 GHz evaluation SiGe heterojunction bipolar transistor technology is presented. The chain achieves a peak output power of -3 dBm and consists of a balanced doubler driven by two cascaded tripler stages. It operates from 317 to 328 GHz with a 0-dBm 18-GHz input signal and a 1.5-W power consumption. Additionally, 220- and 325-GHz doubler breakout circuits with integrated driver amplifiers are presented. The doublers reach an output power of -1 dBm at 220 GHz and -3 dBm at 325 GHz with a power dissipation of 630 and 420 mW, respectively.
Description: 

URI: http://localhost/handle/Hannan/295979
http://localhost/handle/Hannan/476639
Appears in Collections:2011

Files in This Item:
File SizeFormat 
AL1932899.pdf987.35 kBAdobe PDF